ANPEC APM3020PUC-TR Datasheet

APM3020P
P-Channel Enhancement Mode MOSFET
Features
-30V/-11A, R
R
••
Super High Density Cell Design
••
••
Reliable and Rugged
••
••
TO-252 Package
••
= 17m(typ.) @ VGS = -10V
DS(ON)
= 24m(typ.) @ VGS = -5V
DS(ON)
Pin Description
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
APM3020P
Handling Code
Temp. Range
Package Code
Package Code U : T O -2 52 Operating Junction Temp. Range C : -55 to 125°C Handling Code TU : T ube TR : T ape & Ree l
G DS
Top View of TO-252
APM 3020P U :
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
D
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002
Drain-Source Voltage -30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous -40
Maximum Drain Current – Pulsed -70
Maximum Power Dissipation
APM 3020P XXXXX
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Parameter Rating Unit
V
A
TA=25 ºC 50P
W
T
=100 ºC 20
A
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APM3020P
Absolute Maximum Ratings (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
T
J
T
STG
R
θJC
Electrical Characteristics (T
Symbol Parameter Test Condition
Maximum Junction Temperature 150 ºC
Storage Temperature Range -55 to 150 ºC
Thermal Resistance – Junction to Case 2.5
= 25°C unless otherwise noted)
A
APM3020P
Min. Typ. Max.
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown Voltage VGS=0V , IDS=-250A -30 V
DSS
Zero Gate Voltage Drain Current VDS=-24V , VGS=0V -1 µA
Gate Threshold Voltage
V
DS=VGS
, IDS=-250µA
-1 -3
Gate Leakage Current VGS=±20V , VDS=0V
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=-11A, VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
VGS=-10V , IDS=-11A
V
=-5V , IDS=-7A
GS
V
=-15V , VGS=-4.5V,
DS
=-4.6A
I
DS
V
=-15V , IDS=-6A ,
DD
V
=-10 V , RG=1
GEN
R
=2.5
L
=0V
V
GS
=-25V
V
DS
Frequency=1.0MHz
17 20
24 30
-1.3 -1.3
23 30
10
9
16 30
22 30
75 120
31 80
3720
580
245
±
100
ºC/W
Unit
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤ 500µs, duty cycle 2%
Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002
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APM3020P
Typical Characteristics
Output Characteristics
50
VGS=4,5,6,7,8,9,10V
40
30
20
-Drain Current (A)
DS
-I
10
0
0246810
-VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
VGS=3V
VGS=2.5V
-IDS=250µA
Transfer Characteristics
50
40
30
20
-Drain Current (A)
DS
-I
10
0
012345
-VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.035
TJ=125°C
TJ=25°C
TJ=-55°C
1.25
1.00
0.75
(Normalized)
0.50
-Threshold Voltage (V)
GS(th)
0.25
-V
0.00
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002
0.030
-VGS=5V
0.025
0.020
-On-Resistance (Ω)
0.015
DS(ON)
R
0.010
0.005 0 5 10 15 20 25 30
-VGS=10V
-IDS-Drain Current (A)
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