ANPEC APM3011NUC-TU, APM3011NUC-TR, APM3011NGC-TU, APM3011NGC-TR, APM3011NFC-TU Datasheet

APM3011N

N-Channel Enhancement Mode MOSFET

Features

• 30V/60A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• TO-220, TO-252 and TO-263 Packages

••

DS(ON)

=9mΩ(typ.) @ VGS=10V

DS(ON)

=14mΩ(typ.) @ VGS=5V

DS(ON)

Applications

Pin Description

Top View of TO-220 , TO-252 and TO-263

• Power Management in Desktop Computer or

DC/DC Converters Systems.

Ordering and Marking Information

APM3011N

Handling Code

Temp. Range

Package Code

Package Code
F : TO-220 U :TO-252 G : TO-263
Temp. Range
C : 0 to 70 C
Handling Code
TU : Tube
TR : Tape & Reel

°

APM3011N G/U/F :

APM3011N
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 60

Maximum Drain Current – Pulsed 120

Parameter Rating Unit

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

www.anpec.com.tw1

APM3011N

Absolute Maximum Ratings Cont. (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

Maximum Power Dissipation

TA=25°C

TO-252 50

TO-263 62.5

TO-252 20

=100°C

T

T

J

T

STG

R

JA

θ

R

JC

θ

Electrical Characteristics (T

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

Thermal Resistance – Junction to Case 2.5

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

A

TO-263 25

APM3011N

Min.

Typ. Max.

Static

BV

DSS

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

a

V

Sd

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

T

r

t

d(OFF)

T

f

C

iss

C

oss

C

rss

Drain-Source Breakdown

Zero Gate Voltage Drain
Current

Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

VGS=0V, IDS=250µA
VDS=24V , VGS=0V 1
V

=24V, VGS=0V, Tj= 55°C

DS

V
V

, IDS=250µA

DS=VGS

=±20V, VDS=0V

GS

VGS=10V, IDS=30A

=5V, IDS=15A

V

GS

Diode Forward Voltage ISD=24A, VGS=0V

b

Total Gate Charge
Gate-Source Charge

V

=15V, IDS=30A

DS

V

=4.5V

GS

Gate-Drain Charge
Turn-on Delay Time

=15V, IDS=1A,

V

Turn-on Rise Time
Turn-off Delay Time

DD

=10V, RG=0.2

V

GEN

Turn-off Fall Time

=0V

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

V

GS

V

=15V

DS

Frequency =1.0MHz

Ω

30 V

5

13

100

±

911

14 18

0.6 1.2

22 28

12.8
5
914
612

30 45

816

2000

420
210

W

W

°

°

C/W

°

C/W

°

Unit

m

C

C

µ

V

nA

V

nC

ns

pF

A

Ω

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

www.anpec.com.tw2

APM3011N

Typical Characteristics

Output Characteristics

70

60

50

40

30

-Drain Current (A)

20

DS

I

10

0

012345678910

VG=4,4.5,6,8,10V

VGS=3V

VGS=2.5V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

1.0

Transfer Characteristics

50

VDS=10V

40

30

20

-Drain Current (A)

DS

I

10

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.020

VGS=5V

0.016

0.8

-Variance (V)

GS(th)

V

0.6

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

0.012

0.008

VGS=10V

-On-Resistance (Ω)

DS(ON)

0.004

R

0.000
0 102030405060

IDS-Drain Current (A)

www.anpec.com.tw3

APM3011N

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature

0.035

IDS=30A

0.030

0.025

0.020

0.015

-On-Resistance (Ω)

0.010

DS (ON)

R

0.005

0.000
345 6 78 910

Gate Voltage (V) Tj-Junction Temperature (°C)

Gate Charge

10

VDS=15V

IDS=20A

8

1.6

VGS=10V

I

1.4

1.2

1.0

0.8

-On Resistance (Ω) (Normalized)

DS(ON)

0.6

R

-50 -25 0 25 50 75 100 125 150

DS

Capacitance Characteristics

3000

2000

Ciss

=30A

6

4

-Gate-to-Source Voltage (V)

2

GS

V

0

0 1020304050

QG-Total-Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

1000

Coss

500

C-Capacitance (pF)

Crss

Frequency=1MHz

100

0.1 1 10

VDS-Drain-to-Source Voltage (V)

30

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