ANPEC APM3009NFC-TR, APM3009NUC-TU, APM3009NUC-TR, APM3009NGC-TU, APM3009NGC-TR Datasheet

APM3009N

N-Channel Enhancement Mode MOSFET

Features

• 30V/70A , R

R

••

• Super High Dense Advanced Cell Design for

••

Extremely Low R

••

• Reliable and Rugged

••

••

• TO-220 , TO-252 and TO-263 Packages

••

=7mΩ(typ.) @ VGS=10V

DS(ON)

=11mΩ(typ.) @ VGS=4.5V

DS(ON)

DS(ON)

Pin Description

Applications

Top View of TO-220, TO-252 and TO-263

• Power Management in Desktop Computer or

DC/DC Converters.

Ordering and Marking Information

APM3009N

Handling Code

Temp. Range

Package Code

Package Code
F : T O -22 0 G : TO -2 63 U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 12 5 C
Handling Code
T U : Tu be
TR : Tape & Reel

123

G

°°°°

DS

APM 3009N F/G/U :

APM3009N
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 60

Maximum Drain Current – Pulsed 110

Parameter Rating Unit

XXXXX

(TA = 25°C unless otherwise noted)

- Da te C od e

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

www.anpec.com.tw1

APM3009N

Absolute Maximum Ratings Cont. (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

Maximum Power Dissipation

TA=25°C

TO-252 50

TO-263 62.5

TO-252 20

TA=100°C

TO-263 25

TJ,T

R

STG

θ

JA

Maximum Operating and Storage Junction Temperature -55 to 150

Thermal Resistance – Junction to Ambient

TO-252 50

TO-263 60

R

θ

JC

Thermal Resistance – Junction to Case

TO-252 2.5

TO-263 2

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM3009N

Min.

Typ. Max.

Static

BV

DSS

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

a

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

T

r

t

d(OFF)

T

f

C

iss

C

oss

C

rss

Drain-Source Breakdown
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Source On-state

a

Resistance

VGS=0V, IDS=250µA

V

=24V , VGS=0V 1

DS

V
V

, IDS=250µA

DS=VGS

=±20V, VDS=0V

GS

VGS=10V, IDS=35A
V

=4.5V, IDS=20A

GS

Diode Forward Voltage ISD=35A, VGS=0V

b

Total Gate Charge
Gate-Source Charge

=15V, IDS=20A

V

DS

=4.5V,

V

GS

Gate-Drain Charge
Turn-on Delay Time

V

=15V, IDS=1A,

Turn-on Rise Time
Turn-off Delay Time

DD

V

=10V, RG= 0.2

GEN

Turn-off Fall Time

V

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

=0V

GS

=15V

V

DS

Frequency =1.0MHz

Ω

30 V

13

100

±

79

11 15

0.6 1.3

22 28

12.8
5

10 15

713

35 50
10 20

2400

500
240

W

°

C/W

°

C/W

°

Unit

m

C

µ

V

nA

V

nC

ns

pF

A

Ω

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

www.anpec.com.tw2

APM3009N

Typical Characteristics

Output Characteristics

70

60

50

40

30

-Drain Current (A)

20

DS

I

10

0

01234567 8910

VGS=4,4.5,6,8,10V

VGS=3V

VGS=2.5V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

1.0

Transfer Characteristics

50

VDS=10V

40

30

20

-Drain Current (A)

DS

I

10

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.015

0.012

VGS=4.5V

0.8

(Normalized)

0.6

VGS(th)-Threshold Voltage (V)

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

0.009

0.006

-On-Resistance (Ω)

DS(ON)

0.003

R

0.000
0 10203040 50 60708090100

VGS=10V

ID-Drain Current (A)

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APM3009N

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature

0.030

IDS=35A

0.025

0.020

0.015

-On-Resistance (Ω)

0.010

DS (ON)

R

0.005

0.000
345678910

Gate Voltage (V) Tj-Junction Temperature (°C)

On-Resistaence vs. Junction Temperature

10

9

VGS=10V

IDS=35A

1.6

1.4

1.2

1.0

(Normalized)

-On Resistance (Ω)

DS(ON)

0.8

R

0.6

-50 -25 0 25 50 75 100 125 150

Gate Charge

10

VDS=15V

IDS=20A

8

VGS=10V

I

=35A

DS

8

7

-On Resistance (Ω)

6

DS(ON)

R

5

4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

6

4

-Gate-to-Source Voltage (V)

2

GS

V

0

0 1020304050

QG-Total-Gate Charge (nC)

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APM3009N

Typical Characteristics Cont.

Capacitance Characteristics

3000

2000

1000

Ciss

Coss

500

C-Capacitance (pF)

Crss

Frequency=1MHz

100

0.1 1 10

VDS-Drain-to-Source Voltage (V)

Single Pulse Power

3000

TO-252

Source-Drain Diode Forward Voltage

100

10

1

TJ=125°C

-Source Current (A)

SD

I

30

0.1

0.0 0.3 0.6 0.9 1. 2 1.5

TJ=25°C

VSD-Source to Drain Voltage (V)

Single Pulse Power

3000

TJ=-55°C

TO-263

2500

2000

1500

Power (W)

1000

500

0

-5

10

-4

10

-3

10

10

Time (sec)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

2500

2000

1500

Power (W)

1000

500

0

-5

-4

-3

-2

-1

0

-2

-1

10

0

10

10

10

10

10

10

10

Time (sec)

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1

10

APM3009N

Typical Characteristics Cont.

Normalized Transient Thermal Transient Impedence, Junction to Ambient

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

0.01
10

-5

D=0.02

D=0.01

SINGLE PULSE

10

-4

Thermal Impedance

Normalized Effective Transient

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

10

-3

10

-2

Square Wave Pulse Duration (sec)

thJA

10

thJA

-1

=50°C/W

TO-252

10

0

Normalized Transient Thermal Transient Impedence, Junction to Ambient

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

Normalized Effective Transient

0.01

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

10

-5

D=0.02

D=0.01

SINGLE PULSE

-4

10

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

10

-3

10

-2

10

Square Wave Pulse Duration (sec)

TO-263

=62.5°C/W

thJA

thJA

-1

10

0

10

1

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APM3009N

Package Informaion

TO-252( Reference JEDEC Registration TO-252)

E

b2

A

C1

L2

D

H

L1

L

b

e1

C

A1

Dim

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0.035

b2 5.207 5.461 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.245

E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020

L1 0.64 1.02 0.025 0.040

L2 0.89 2.032 0.035 0.080

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

Min. Max. Min. Max.

Millimeters Inches

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APM3009N

Packaging Information Cont.

TO-263 ( Reference JEDEC Registration TO-263)

E

L2

D

L

L3

A

c2

Φ 1

L4

R

L1

DETAIL "A"ROTED

E1

TERMINAL 4

D1

c

Millimeters Inches

Dim

A

Min. Max. Min. Max.

4.06 4.83

0.160 0.190

b 0.51 1.016 0.02 0.040

b2 1.14 1.651 0.045 0.065

c

0.38 TYP.

0.015 TYP.

c2 1.14 1.40 0.045 0.055

D 8.64 9.65 0.340 0.380
E

9.65 10.54

0.380 0.415

L 14.60 15.88 0.575 0.625
L1 2.24 2.84 0.090 0.110
L2

1.02 2.92

0.040 0.112

L3 1.20 1.78 0.050 0.070

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

www.anpec.com.tw8

APM3009N

Package Information Cont.

TO-220 ( Reference JEDEC Registration TO-220)

D

Q

R

E

L1

b

e

b1

e1

H1

A

F

L

c

J1

Millimeters Inches

Dim

Min. Max. Min. Max.

A 3.56 4.83 0.140 0.190

b1 1.14 1.78 0.045 0.070

b 0.51 1.14 0.020 0.045
c 0.31 1.14 0.012 0.045

D 14.23 16.51 0.560 0.650

e 2.29 2.79 0.090 0.110

e1 4.83 5.33 0.190 0.210

E 9.65 10.67 0.380 0.420
F 0.51 1.40 0.020 0.055

H1 5.84 6.86 0.230 0.270

J1 2.03 2.92 0.080 0.115

L 12.7 14.73 0.500 0.580

L1 3.65 6.35 0.143 0.250

R 3.53 4.09 0.139 0.161
Q 2.54 3.43 0.100 0.135

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

www.anpec.com.tw9

APM3009N

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10°C /second max.
Preheat temperature 125± 25°C)

°

Temperature maintained above 183
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

C

120 seconds max.
60 ~ 150 seconds

10 ~ 20 seconds

°

220 +5/-0

°

C /second max. 10°C /second max.

6
6 minutes max.

C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C

60 seconds

VPR

Package Reflow Conditions

pkg. thickness
and all bags

Convection220 +5/-0°C
VPR 215-219°C
IR/Convection 220 +5/-0

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

2.5mm

≥≥≥≥

°

C IR/Convection 235 +5/-0

pkg. thickness < 2.5mm and

pkg. volume

≥≥≥≥

350 mm

pkg. thickness < 2.5mm and pkg.

volume <

°

Convection 235 +5/-0

VPR 235 +5/-0

°

C

C

°

C

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APM3009N

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimension

t

E

W

Application

TO-252 330±3 100 ± 2 13 ± 0. 5 2 ± 0.5

Application

A B C J T1 T2 W P E

F D D1 Po P1 Ao Bo Ko t

F

Po

Ao

J

A

P1

P

D

D1

C

16.4 +0.3

-0.2

T2

T1

2.5± 0.5

Bo

B

Ko

16 + 0.3

16 - 0.1

8 ± 0.1 1.75± 0.1

TO-252

Application

TO-263 380±3 80 ± 2 13 ± 0. 5 2 ± 0.5 24 ± 42± 0.3

Application

TO-263 11.5 ± 0.1

7.5 ± 0.1 1.5± 0.1

A B C J T1 T2 W P E

F D D1 Po P1 Ao Bo Ko t

1.5 +0.1

1.5+ 0.25

1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013

4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

24 + 0.3

- 0.1

16 ± 0.1 1.75± 0.1

(mm)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

www.anpec.com.tw11

APM3009N

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252
TO- 263

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

16 13.3 2500
24 21.3 1000

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

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