ANPEC APM3009NFC-TR, APM3009NUC-TU, APM3009NUC-TR, APM3009NGC-TU, APM3009NGC-TR Datasheet

APM3009N

N-Channel Enhancement Mode MOSFET

Features

• 30V/70A , R

R

••

• Super High Dense Advanced Cell Design for

••

Extremely Low R

••

• Reliable and Rugged

••

••

• TO-220 , TO-252 and TO-263 Packages

••

=7mΩ(typ.) @ VGS=10V

DS(ON)

=11mΩ(typ.) @ VGS=4.5V

DS(ON)

DS(ON)

Pin Description

Applications

Top View of TO-220, TO-252 and TO-263

• Power Management in Desktop Computer or

DC/DC Converters.

Ordering and Marking Information

APM3009N

Handling Code

Temp. Range

Package Code

Package Code
F : T O -22 0 G : TO -2 63 U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 12 5 C
Handling Code
T U : Tu be
TR : Tape & Reel

123

G

°°°°

DS

APM 3009N F/G/U :

APM3009N
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 60

Maximum Drain Current – Pulsed 110

Parameter Rating Unit

XXXXX

(TA = 25°C unless otherwise noted)

- Da te C od e

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

www.anpec.com.tw1

APM3009N

Absolute Maximum Ratings Cont. (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

Maximum Power Dissipation

TA=25°C

TO-252 50

TO-263 62.5

TO-252 20

TA=100°C

TO-263 25

TJ,T

R

STG

θ

JA

Maximum Operating and Storage Junction Temperature -55 to 150

Thermal Resistance – Junction to Ambient

TO-252 50

TO-263 60

R

θ

JC

Thermal Resistance – Junction to Case

TO-252 2.5

TO-263 2

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM3009N

Min.

Typ. Max.

Static

BV

DSS

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

a

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

T

r

t

d(OFF)

T

f

C

iss

C

oss

C

rss

Drain-Source Breakdown
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Source On-state

a

Resistance

VGS=0V, IDS=250µA

V

=24V , VGS=0V 1

DS

V
V

, IDS=250µA

DS=VGS

=±20V, VDS=0V

GS

VGS=10V, IDS=35A
V

=4.5V, IDS=20A

GS

Diode Forward Voltage ISD=35A, VGS=0V

b

Total Gate Charge
Gate-Source Charge

=15V, IDS=20A

V

DS

=4.5V,

V

GS

Gate-Drain Charge
Turn-on Delay Time

V

=15V, IDS=1A,

Turn-on Rise Time
Turn-off Delay Time

DD

V

=10V, RG= 0.2

GEN

Turn-off Fall Time

V

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

=0V

GS

=15V

V

DS

Frequency =1.0MHz

Ω

30 V

13

100

±

79

11 15

0.6 1.3

22 28

12.8
5

10 15

713

35 50
10 20

2400

500
240

W

°

C/W

°

C/W

°

Unit

m

C

µ

V

nA

V

nC

ns

pF

A

Ω

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

www.anpec.com.tw2

APM3009N

Typical Characteristics

Output Characteristics

70

60

50

40

30

-Drain Current (A)

20

DS

I

10

0

01234567 8910

VGS=4,4.5,6,8,10V

VGS=3V

VGS=2.5V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

1.0

Transfer Characteristics

50

VDS=10V

40

30

20

-Drain Current (A)

DS

I

10

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.015

0.012

VGS=4.5V

0.8

(Normalized)

0.6

VGS(th)-Threshold Voltage (V)

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

0.009

0.006

-On-Resistance (Ω)

DS(ON)

0.003

R

0.000
0 10203040 50 60708090100

VGS=10V

ID-Drain Current (A)

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APM3009N

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature

0.030

IDS=35A

0.025

0.020

0.015

-On-Resistance (Ω)

0.010

DS (ON)

R

0.005

0.000
345678910

Gate Voltage (V) Tj-Junction Temperature (°C)

On-Resistaence vs. Junction Temperature

10

9

VGS=10V

IDS=35A

1.6

1.4

1.2

1.0

(Normalized)

-On Resistance (Ω)

DS(ON)

0.8

R

0.6

-50 -25 0 25 50 75 100 125 150

Gate Charge

10

VDS=15V

IDS=20A

8

VGS=10V

I

=35A

DS

8

7

-On Resistance (Ω)

6

DS(ON)

R

5

4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002

6

4

-Gate-to-Source Voltage (V)

2

GS

V

0

0 1020304050

QG-Total-Gate Charge (nC)

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