ANPEC APM3007NUC-TU, APM3007NUC-TR, APM3007NGC-TU, APM3007NGC-TR, APM3007NFC-TU Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM3007N

Handling Code

Temp. Range

Package Code

Package Code
F : T O -22 0 G : TO -2 63 U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 12 5 C
Handling Code
T U : Tu be
TR : Tape & Reel

°°°°

APM 3007N F/G/U :

APM3007N
XXXXX

- Da te C od e

XXXXX

Pin DescriptionFeatures

Applications

Absolute Maximum Ratings

(TA = 25°C unless otherwise noted)

• 30V / 80A , R

DS(ON)

= 5.5mΩ(typ.) @ VGS= 10V

R

DS(ON)

= 8.5mΩ(typ.) @ VGS= 4.5V

• Super High Dense Advanced Cell Design for

Extremely Low R

DS(ON)

• Reliable and Rugged

• TO-220 , TO-252 and TO-263 Packages

• Power Management in Desktop Computer or

DC/DC Converters.

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

*

Maximum Drain Current – Continuous 70

I

DM

Maximum Drain Current – Pulsed 130

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Top View of TO-220, TO-252 and TO-263

Ordering and Marking Information

G

DS

123

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw2

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

APM3007N

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

30 V

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=24V , VGS=0V 1

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

13

V

I

GSS

Gate Leakage Current

V

GS

=±20V , VDS=0V

±

100

nA

VGS=10V , IDS=40A

5.5 7

R

DS(ON)

a

Drain-Source On-state

Resistance

V

GS

=4.5V , IDS=20A

8.5 10

m

Ω

V

SD

a

Diode Forward Voltage ISD=35A , VGS=0V

0.6 1.3

V

Dynamic

b

Q

g

Total Gate Charge

25 30

Q

gs

Gate-Source Charge

12

Q

gd

Gate-Drain Charge

V

DS

=15V , IDS= 40A

V

GS

=4.5V ,

8

nC

t

d(ON)

Turn-on Delay Time

13 20

T

r

Turn-on Rise Time

915

t

d(OFF)

Turn-off Delay Time

43 66

T

f

Turn-off Fall Time

V

DD

=15V , IDS=1A ,

V

GEN

=10V , RG=0.2

Ω

14 28

ns

C

iss

Input Capacitance

3000

C

oss

Output Capacitance

660

C

rss

Reverse Transfer Capacitance

V

GS

=0V

V

DS

=15V

Frequency=1.0MHz

330

pF

Symbol Parameter Rating Unit

TO-252 50

TA=25°C

TO-263 62.5

TO-252 20

P

D

Maximum Power Dissipation

TA=100°C

TO-263 25

W

TJ,T

STG

Maximum Operating and Storage Junction Temperature -55 to 150

°

C

TO-252 50

R

θ

JA

Thermal Resistance – Junction to Ambient

TO-263 60

°

C/W

TO-252 2.5

R

θ

JC

Thermal Resistance – Junction to Case

TO-263 2

°

C/W

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings Cont. (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw3

Typical Characteristics

012345678910

0

10

20

30

40

50

60

70

80

1.0 1.5 2.0

2.5 3.0

3.5

4.0

0

12

24

36

48

60

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

Output Characteristics

VDS-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

Transfer Characteristics

VGS-Gate-to-Source Voltage (V)

I

DS

-Drain Current (A)

Threshold Voltage vs. Junction Temperature

Tj-Junction Temperature (°C)

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

0 102030405060708090100

0.000

0.002

0.004

0.006

0.008

0.010

VGS=10V

VGS=4.5V

IDS=250µA

VDS=10V

TJ=125°C

TJ=25°C

TJ=-55°C

VGS=4,4.5,6,8,10V

VGS=2.5V

VGS=3V

VGS(th)-Threshold Voltage (V)

(Normalized)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw4

0 102030405060

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

2

3

4

5

6

7

8

Typical Characteristics Cont.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature

R

DS(ON)

-On Resistance (Ω)

(Normalized)

R

DS (ON)

-On-Resistance (Ω)

Gate Voltage (V) Tj-Junction Temperature (°C)

Gate Charge

QG-Total Gate Charge (nC)

V

GS

-Gate-to-Source Voltage (V)

345678910

0.000

0.005

0.010

0.015

0.020

0.025

0.030

IDS=40A

VGS=10V

IDS=40A

VDS=10V

IDS=40A

On-Resistaence vs. Junction Temperature

R

DS(ON)

-On Resistance (Ω)

Tj-Junction Temperature (°C)

VGS=10V

IDS=40A