ANPEC APM3005NFC-TR, APM3005NUC-TU, APM3005NGC-TU, APM3005NGC-TR Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM 3005N

Handling Code
Temp. Range
Package Code

Package Code
F : T O -2 2 0 U : T O-25 2 G : T O -2 6 3
Operating Junction Temp. Range
C : -5 5 to 1 2 5 C
Handling Code
T U : Tu b e
TR : Tape & Reel

°°°°

APM 3005N :

APM3005N
XXXXX

- Da te C o d e

XXXXX

Pin Description

Ordering and Marking Information

Features

Applications

Absolute Maximum Ratings

(TA = 25°C unless otherwise noted)

• 30V / 80A , R

DS(ON)

= 4mΩ(typ.) @ VGS= 10V

R

DS(ON)

= 7mΩ(typ.) @ VGS= 4.5V

• Super High Dense Advanced Cell Design for

Extremely Low R

DS(ON)

• Reliable and Rugged

• TO-220, TO-252 and TO-263 Packages

• Power Management in Desktop Computer or

DC/DC Converters.

T op View of T O-220, TO-252 and T O-263

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

*

Maximum Drain Current – Continuous 80

I

DM

Maximum Drain Current – Pulsed 160

A

G

DS

123

G

S

D

N-Channel MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw2

APM3005N

Symbol Parameter Test Condition

Min. T

y

p. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

30 V

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=24V , VGS=0V 1 µA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

11.52

V

I

GSS

Gate Leakage Current

V

GS

=±20V , VDS=0V

±

100

nA

VGS=10V , IDS=80A

45.4

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=4.5V , IDS=70A

78

m

Ω

V

SD

a

Diode Forward Voltage ISD=30A , VGS=0V

0.85 1.3

V

Dynamic

b

Q

g

Total Gate Charge

28 32

Q

gs

Gate-Source Charge

12.8

Q

gd

Gate-Drain Charge

VDS=15V , IDS= 80A
V

GS

=5V ,

21.2

nC

t

d(ON)

Turn-on Delay Time

13 20

T

r

Turn-on Rise Time

915

t

d(OFF)

Turn-off Delay Time

43 66

T

f

Turn-of f Fall Time

V

DD

=15V , IDS=1A ,

V

GEN

=10V , RG=0.2

Ω

14 28

ns

C

iss

Input Capacitance

4700

C

oss

Output Capacitance

930

C

rss

Reverse Transfer Capacitance

VGS=0V
V

DS

=15V

Frequency=1.0MHz

280

pF

Symbol Parameter Rating Unit

TO-252 50

TA=25°C

TO-263 62.5

W

TO-252 20

P

D

Maximum Power Dissipation

T

A

=100°C

TO-263 25

W

TJ,T

STG

Maximum O p era t ing and Storage Junction Temperature -55 to 150

°

C

TO-252 50

R

θ

JA

Thermal Resistance – Junction to Ambient

TO-263 60

°

C/W

TO-252 2.5

R

θ

JC

Thermal Resistance – Junction to Case

TO-263 2

°

C/W

* Surface Mounted on FR4 B oard, t ≤ 10 sec.

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings (Cont.) (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw3

0 20 40 60 80 100 120

0.000

0.002

0.004

0.006

0.008

0.010

Typical Characteristics

012345

0

20

40

60

80

Output Characteristics

V

DS

-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

VGS=4,5,6,7,8,9,10V

VGS=3V

VGS=3.5V

0123456

0

20

40

60

80

100

VGS-Gate-to-Source Voltage (V)

Transfer Characteristics

I

DS

-Drain Current (A)

TJ=125°C

TJ=25°C

TJ=-55°C

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

VGS=10V

VGS=4.5V

-50 -25 0 25 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Threshold Voltage vs. Junction Temperature

Tj-Junction T emperature (°C)

V

GS(th)

-Threshold Voltage (V)

(Normalized)

IDS=250µA

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw4

0 102030405060708090

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Typical Characteristics (Cont.)

Gate Charge

QG-T otal Gate Charge (nC)

V

GS

-Gate-to-Source Voltage (V)

VDS=15V

IDS=80A

0246810

0.000

0.005

0.010

0.015

0.020

0.025

IDS=60A

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

R

DS (ON)

-On-Resistance (Ω)

Tj-Junction T emperature (°C)

On-Resistaence vs. Junction T emperature

R

DS(ON)

-On Resistance (mΩ)

VGS=10V

IDS=60A

-50 -25 0 25 50 75 100 125 150

0

2

4

6

8

10

Tj-Junction T emperature (°C)

On-Resistaence vs. Junction T emperature

R

DS(ON)

-On Resistance (mΩ)

(Normalized)

VGS=10V

IDS=60A