ANPEC APM2509NUC-TU, APM2509NUC-TR Datasheet

APM2509N

N-Channel Enhancement Mode MOSFET

Features

• 25V/60A , R

R

••

• Super High Dense Advanced Cell Design for

••

Extremely Low R

••

• Reliable and Rugged

••

••

• TO-252 Package

••

=8mΩ(typ.) @ VGS=10V

DS(ON)

=11mΩ(typ.) @ VGS=4.5V

DS(ON)

DS(ON)

Pin Description

Applications

• Power Management in Desktop Computer or

DC/DC Converters.

Ordering and Marking Information

12 3

DG

S

Top View of TO-252

D

G

S

N-Channel MOSFET

APM2509N

Handling Code

Temp. Range

Package Code

APM 2509N U :

APM2509N
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 25

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 60

Maximum Drain Current – Pulsed 110

Parameter Rating Unit

Package Code
U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 15 0 C
Handling Code
T U : Tu be
TR : Tape & Reel

XXXXX

°°°°

- Da te C od e

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003

www.anpec.com.tw1

APM2509N

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

50

20

Typ. Max.

P

D

TJ,T

STG

R

JA

θ

R

JC

θ

Electrical Characteristics (T

Maximum Power Dissipation

Maximum Operating and Storage Junction Temperature -55 to 150

Thermal Resistance – Junction to Ambient 50

Thermal Resistance – Junction to Case 2.5

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

TA=25°C

=100°C

T

A

Min.

APM2509N

Static

BV

I

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown

DSS

Zero Gate Voltage Drain

DSS

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=35A, VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

GS

V

DS

V

DS=VGS

V

GS

VGS=10V, IDS=35A
V

GS

V

DS

V

GS

Turn-on Delay Time

V

T

Turn-on Rise Time

r

Turn-off Delay Time

T

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

DD

V

GEN

V

GS

V

DS

Frequency =1.0MHz

=0V, IDS=250µA

25 V

=20V , VGS=0V 1 µA

, IDS=250µA

=±20V, VDS=0V

11.52
±100

89.5

=4.5V, IDS=20A

11 15

0.85 1.3

=15V, IDS=20A

=4.5V,

22 28

12.8
5

10 15

=15V, IDS=1A,

=10V, RG= 0.2Ω

713

35 50
10 20

=0V
=15V

2400

500
240

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

W

°C

°C/W

C/W

°

Unit

V

nA

mΩ

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003

www.anpec.com.tw2

APM2509N

Typical Characteristics

Output Characteristics

70

60

50

40

30

-Drain Current (A)

20

DS

I

10

0

01234567 8910

VGS=4,4.5,6,8,10V

VGS=3V

VGS=2.5V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

1.0

Transfer Characteristics

50

VDS=10V

40

30

20

-Drain Current (A)

DS

I

10

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.015

0.012

VGS=4.5V

0.8

(Normalized)

0.6

VGS(th)-Threshold Voltage (V)

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003

0.009

0.006

-On-Resistance (Ω)

DS(ON)

0.003

R

0.000
0 10203040 50 60708090100

VGS=10V

ID-Drain Current (A)

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