ANPEC APM2506NUC-TUL, APM2506NUC-TU, APM2506NUC-TRL, APM2506NUC-TR Datasheet

APM2506NU

y

g

A

Features

N-Channel Enhancement Mode MOSFET

Pin Description

z 25V/60A,

R

= 5mΩ (typ.) @ VGS= 10V

DS(ON)

= 7mΩ (typ.) @ VGS= 4.5V

R

DS(ON)

z Super High Dense Cell Design
z Avalanche Rated
z Reliable and Rugged

3

1

2

Applications

z Power Management in Desktop Computer or

DC/DC Converters

Ordering and Marking Information

Pin 3

D

Pin 1

G

S

Pin 2

PM2506N

APM2506N U:

APM2506N
XXXXX

Lead Free Code
Handing Code
Temp. Range
Package Code

Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device

Blank : Original Device

XXXXX – Date Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verif

Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003

1

before placin

orders.

www.anpec.com.tw

APM2506NU

Absolute Maximum Ratings

Symbol

Common Ratings (TA = 25°C)

V

DSS

V

GSS

TJ

T

STG

Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storag e Temperature Range -55 to 150

Mounted on Large Heat Sink

R

IDP

ID

PD

θJC

300µs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Mounted on PCB of 1in2 pad

R

IDP

ID

PD

θJA

300µs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Ambient 50 °C/W

area

Parameter Rating Unit

±25
±20
150

TC=25°C 150
T

=100°C 80

C

TC=25°C 60*

=100°C 40

T

C

TC=25°C

=100°C

T

C

50
20

2.5

°C/W

TA=25°C 150

=100°C 80

T

A

TA=25°C 17

=100°C 10

T

A

TA=25°C

=100°C

T

A

2.5
1

V

°C
°C

A

A

W

A

A

W

Mounted on PCB of Minimum Footprint

IDP

ID

PD

R

θJA

Notes：

* Current limited by bond wire

Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003

300µs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Ambient 75 °C/W

2

TA=25°C 150

=100°C 80

T

A

TA=25°C 13
T

=100°C 7

A

TA=25°C

=100°C

T

A

1.5

0.5

www.anpec.com.tw

A

A

°C/W
°C/W

APM2506NU

Electrical Characteristics (T

Symbol Parameter Test Condition

Drain-Source Avalanche Ratings

EAS Drain-Source Avalanche Energy ID=45A, VDD=15V 100 mJ

Static

BV

Drain-Source Breakdown Voltage

DSS

I

Zero Gate Voltage Drain Current VDS=20V, VGS=0V 1

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current VGS=±20V, VDS=0V ±100 nA

GSS

a

R

Diode

Drain-Source On-state Resistance

DS(ON)

a

V

Diode Forward Voltage ISD=20A , VGS=0V 0.7 1.3 V

SD

IS Diode continuous forward current TA=25°C 40 A

=25°C)

A

APM2506NU

Unit

Min. Typ. Max.

V

=0V, IDS=250µA

GS

25 V

µA

V

DS=VGS

, IDS=250µA

1 1.5 2 V

VGS=10V, IDS=40A 5 6

mΩ

V

=4.5V, IDS=20A 7 10

GS

Dynamicb

C

Input Capacitance 3000 pF

iss

C

Output Capacitance 670 pF

oss

C

Reverse Transfer Capacitance

rss

t

Turn-on Delay Time 13 20 ns

d(ON)

Tr Turn-on Rise Time 9 15 ns

t

Turn-off Delay Time 43 66 ns

d(OFF)

Tf Turn-off Fall Time

V

=0V

GS

=15V

V

DS

Frequency=1.0MHz

V

=15V, R

DD

IDS=1A, V
R

=6Ω

G

GEN

=15Ω

L

=10V,

360 pF

14 28 ns

Gate Chargeb

Qg Total Gate Charge 32 42 nC

=15V, VGS=4.5V,

V

Qgs Gate-Source Charge 6.6 nC
Qgd Gate-Drain Charge

Notes：

a : Pulse test ; pulse width≤300
b : Guaranteed by design, not subject to production testing

µs, duty cycle≤2%

I

DS

DS

=20A

12.4 nC

Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003

3

www.anpec.com.tw

APM2506NU

Typical Characteristics

Power Dissipation

60

70

Drain Current

50

40

30

- Power (W)

tot

20

P

10

0

0 20 40 60 80 100 120 140 160 180

Tj - Junction Temperature (°C)

Safe Operation Area

300

100

60

50

40

30

20

- Drain Current (A)

D

I

10

0

0 20 40 60 80 100 120 140 160 180

Tj - Junction Temperature (°C)

Thermal Transient Impedance

1

Duty = 0.5

100µs

10

1

- Drain Current (A)

D

I

300µs
1ms
10ms

DC

0.1

0.02

0.01

0.01

0.2

0.1

0.05

Single Pulse

Normalized Effective Transient

TC=25OC

0.1

0.1 1 10 70

V

- Drain-Source Voltage (V) Square Wave Pulse Duration (sec)

DS

Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003

1E-3

1E-4 1E-3 0.01 0.1 1 10 100

4

Mounted on 1i n2 pad

:50oC/W

R

θJA

www.anpec.com.tw