APM2505N
N-Channel Enhancement Mode MOSFET
Features
• 25V / 80A , R
R
= 4mΩ(typ.) @ VGS= 10V
DS(ON)
= 7mΩ(typ.) @ VGS= 4.5V
DS(ON)
Pin Description
• Super High Dense Advanced Cell Design for
Extremely Low R
DS(ON)
• Reliable and Rugged
• TO-252 Package
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
12 3
DG
S
Top View of TO-252
D
G
S
N-Channel MOSFET
APM2505N
Handling Code
Temp. Range
Package Code
APM 2505N U :
APM2505N
XXXXX
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage 25
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 80
Maximum Drain Current – Pulsed 160
Parameter Rating Unit
Package Code
U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 15 0 C
Handling Code
T U : Tu be
TR : Tape & Reel
XXXXX
°°°°
- Da te C od e
(TA = 25°C unless otherwise noted)
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
www.anpec.com.tw1
APM2505N
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
50
20
Typ. Max.
P
D
TJ,T
STG
R
JA
θ
R
JC
θ
Electrical Characteristics (T
Maximum Power Dissipation
Maximum Operating and Storage Junction Temperature -55 to 150
Thermal Resistance – Junction to Ambient 50
Thermal Resistance – Junction to Case 2.5
= 25°C unless otherwise noted)
A
Symbol Parameter Test Condition
TA=25°C
=100°C
T
A
Min.
APM2505N
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=30A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=10V , IDS=40A
V
GS
VDS=15V , IDS= 40A
V
GS
Turn-on Delay Time
V
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
DD
V
GEN
VGS=0V
V
DS
Frequency=1.0MHz
=0V , IDS=250µA
25 V
=20V , VGS=0V 1 µA
, IDS=250µA
=±20V , VDS=0V
11.52
±100
45.5
=4.5V , IDS=20A
78
0.85 1.3
40 55
=4.5V ,
12.8
21.2
30 45
=15V , IDS=1A ,
=10V , RG=0.2Ω
16 24
100 150
55 70
4700
=15V
930
280
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
W
°C
°C/W
°C/W
Unit
V
nA
mΩ
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
www.anpec.com.tw2
APM2505N
Typical Characteristics
Output Characteristics
80
60
40
-Drain Current (A)
DS
20
I
0
012345
V
VGS=4,5,6,7,8,9,10V
-Drain-to-Source Voltage (V)
DS
VGS=3.5V
VGS=3V
Threshold Voltage vs. Junction Temperature
1.4
IDS=250µA
Transfer Characteristics
100
80
60
40
-Drain Current (A)
DS
I
20
0
0123456
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.012
TJ=25°C
TJ=-55°C
TJ=125°C
1.2
1.0
0.8
(Normalized)
0.6
-Threshold Voltage (V)
GS(th)
0.4
V
0.2
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
0.010
0.008
0.006
0.004
-On-Resistance (Ω)
DS(ON)
0.002
R
0.000
0 20406080100
VGS=4.5V
VGS=10V
IDS-Drain Current (A)
www.anpec.com.tw3
APM2505N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.025
0.020
0.015
0.010
-On-Resistance (Ω)
DS (ON)
0.005
R
0.000
0246810
VGS-Gate-to-Source Voltage (V)
On-Resistaence vs. Junction Temperature
2.0
VGS=10V
IDS=40A
1.8
1.6
IDS=40A
On-Resistaence vs. Junction Temperature
10
VGS=10V
IDS=40A
8
6
4
(Normalized)
-On Resistance (mΩ)
2
DS(ON)
R
0
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
Gate Charge
10
VDS=15V
IDS=40A
8
1.4
1.2
1.0
-On Resistance (mΩ)
0.8
DS(ON)
R
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
6
4
2
-Gate-to-Source Voltage (V)
GS
V
0
0 102030405060708090
QG-Total Gate Charge (nC)
www.anpec.com.tw4
APM2505N
Typical Characteristics (Cont.)
Capacitance Characteristics
7000
6000
5000
4000
3000
2000
C-Capacitance (pF)
1000
0
0 5 10 15 20 25 30
VDS-Drain-to-Source Voltage (V)
Single Pulse Power
3000
Frequency=1MHz
Ciss
Coss
Crss
Source-Drain Diode Forward Voltage
100
10
1
-Source Current (A)
SD
I
0.1
TJ=125°C
TJ=25°C
0.0 0.3 0.6 0.9 1.2 1.5
VSD-Source-to-Drain Voltage (V)
TJ=-55°C
2500
2000
1500
Power (W)
1000
500
0
-5
10
-4
10
-3
10
10
Time (sec)
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
-2
-1
10
0
10
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APM2505N
Typical Characteristics (Cont.)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
10
-5
D=0.02
D=0.01
SINGLE PULSE
10
Thermal Impedance
Normalized Effective Transient
0.01
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
3. TJM-TA=PDMZ
-4
10
-3
10
-2
thJA
10
thJA
-1
=50°C/W
10
0
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
www.anpec.com.tw6
APM2505N
Package Informaion (Cont.)
TO-252( Reference JEDEC Registration TO-252)
E
b2
A
C1
L2
D
H
L1
L
b
e1
C
A1
Dim
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0.035
b2 5.207 5.461 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
E 6.35 6.73 0.250 0.265
e1 3.96 5.18 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.02 0.025 0.040
L2 0.89 2.032 0.035 0.080
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
Min. Max. Min. Max.
Millimeters Inches
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APM2505N
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10°C /second max.
Preheat temperature 125± 25°C)
°
Temperature maintained above 183
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
C
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
°
220 +5/-0
°
C /second max. 10°C /second max.
6
6 minutes max.
C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
60 seconds
VPR
Time
Package Reflow Conditions
pkg. thickness
and all bags
Convection 220 +5/-0°C
VPR 215-219°C
IR/Convection 220 +5/-0
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
2.5mm
≥≥≥≥
°
C IR/Convection 235 +5/-0
pkg. thickness < 2.5mm and
pkg. volume
≥≥≥≥
350 mm
pkg. thickness < 2.5mm and pkg.
volume <
°
Convection 235 +5/-0
VPR 235 +5/-0
°
C
C
°
C
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APM2505N
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimension
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
TO-252
A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
(mm)
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
www.anpec.com.tw9
APM2505N
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
16 13.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
www.anpec.com.tw10
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