ANPEC APM2505NUC-TU, APM2505NUC-TR Datasheet

APM2505N

N-Channel Enhancement Mode MOSFET

Features

• 25V / 80A , R

R

= 4mΩ(typ.) @ VGS= 10V

DS(ON)

= 7mΩ(typ.) @ VGS= 4.5V

DS(ON)

Pin Description

• Super High Dense Advanced Cell Design for

Extremely Low R

DS(ON)

• Reliable and Rugged

• TO-252 Package

Applications

• Power Management in Desktop Computer or

DC/DC Converters.

Ordering and Marking Information

12 3

DG

S

Top View of TO-252

D

G

S

N-Channel MOSFET

APM2505N

Handling Code

Temp. Range

Package Code

APM 2505N U :

APM2505N
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 25

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 80

Maximum Drain Current – Pulsed 160

Parameter Rating Unit

Package Code
U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 15 0 C
Handling Code
T U : Tu be
TR : Tape & Reel

XXXXX

°°°°

- Da te C od e

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003

www.anpec.com.tw1

APM2505N

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

50

20

Typ. Max.

P

D

TJ,T

STG

R

JA

θ

R

JC

θ

Electrical Characteristics (T

Maximum Power Dissipation

Maximum Operating and Storage Junction Temperature -55 to 150

Thermal Resistance – Junction to Ambient 50

Thermal Resistance – Junction to Case 2.5

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

TA=25°C

=100°C

T

A

Min.

APM2505N

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown

DSS

Voltage

Zero Gate Voltage Drain
Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=30A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

GS

V

DS

V

DS=VGS

V

GS

VGS=10V , IDS=40A

V

GS

VDS=15V , IDS= 40A

V

GS

Turn-on Delay Time

V

Turn-on Rise Time

r

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

DD

V

GEN

VGS=0V

V

DS

Frequency=1.0MHz

=0V , IDS=250µA

25 V

=20V , VGS=0V 1 µA

, IDS=250µA

=±20V , VDS=0V

11.52

±100

45.5

=4.5V , IDS=20A

78

0.85 1.3

40 55

=4.5V ,

12.8

21.2

30 45

=15V , IDS=1A ,

=10V , RG=0.2Ω

16 24

100 150

55 70

4700

=15V

930

280

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

W

°C

°C/W

°C/W

Unit

V

nA

mΩ

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003

www.anpec.com.tw2

APM2505N

Typical Characteristics

Output Characteristics

80

60

40

-Drain Current (A)

DS

20

I

0

012345

V

VGS=4,5,6,7,8,9,10V

-Drain-to-Source Voltage (V)

DS

VGS=3.5V

VGS=3V

Threshold Voltage vs. Junction Temperature

1.4

IDS=250µA

Transfer Characteristics

100

80

60

40

-Drain Current (A)

DS

I

20

0

0123456

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.012

TJ=25°C

TJ=-55°C

TJ=125°C

1.2

1.0

0.8

(Normalized)

0.6

-Threshold Voltage (V)

GS(th)

0.4

V

0.2

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003

0.010

0.008

0.006

0.004

-On-Resistance (Ω)

DS(ON)

0.002

R

0.000
0 20406080100

VGS=4.5V

VGS=10V

IDS-Drain Current (A)

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