Anpec APM2323AA Schematic [ru]

APM2323AA

P-Channel Enhancement Mode MOSFET

Features

• -20V/-2.5A ,

R
R

= 90mΩ(typ.) @ VGS= -4.5V

DS(ON)

= 130mΩ(typ.) @ VGS= -2.5V

DS(ON)

R

= 200mΩ(typ.) @ VGS= -1.8V

DS(ON)

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered Sys­tems

Pin Description

D

S

G

Top View of SOT-23

D

G

S

P-Channel MOSFET

Ordering and Marking Information

Package Code

APM2323A

Assembly Material
Handling Code

Temperature Range
Package Code

APM2323A A :

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina­tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL c lassification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

A23X

A : SOT-23
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device

X - Date Code

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APM2323AA

mΩ

Absolute Maximum Ratings (T

Symbol

V

Drain-Source Voltage

DSS

V

Gate-Source Voltage

GSS

I

*

Continuous Drain Current

D

I

*

DM

I

T

P

R

Note : *Surface Mounted on 1in

300µs Pulsed Drain Current

*

Diode Continuous Forward Current

S

TJ

Maximum Junction Temperature
Storage Temperature Range -55 to 150

STG

*

Maximum Power Dissipation

D

*

Thermal Resistance-Junction to Ambient

θJA

2

pad area, t ≤ 10sec.

Electrical Characteristics (T

Symbol

Parameter Test Conditions

Parameter Rating Unit

= 25°C unless otherwise noted)

A

= 25°C unless otherwise noted)

A

VGS=-4.5V

TA=25°C 0.83
TA=100°C

APM2323AA

Min. Typ. Max.

-20

±12

-2.5

-10

-1

150

0.3

150

V

A

A

°C

W

°C/W

Unit

STATIC CHARACTERISTICS

BV

Drain-Source Breakdown Voltage

DSS

VGS=0V, IDS=-250µA

-20 - - V

VDS=-16V, VGS=0V - - -1

I

Zero Gate Voltage Drain Current

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current VGS=±10V, VDS=0V - - ±10

GSS

TJ=85°C - - -30
VDS=VGS, IDS=-250µA

-0.5 -0.7

VGS=-4.5V, IDS=-2.5A - 90 120

R

DS(ON)

Resistance

VGS=-2.5V, IDS=-1.8A - 130 180

Drain-Source On-state

a

VGS=-1.8V, IDS=-0.5A - 200 300

DIODE CHARACTERISTICS

a

V

Diode Forward Voltage ISD=-1A, VGS=0V - -0.8 -1.3

SD

t

Reverse Recovery Time - 17 - ns

rr

Q

Reverse Recovery Charge

rr

ISD=-2.5A, dlSD/dt=100A/µs

- 9 - nC

µA

-1 V
µA

V

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

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APM2323AA

Note b : Guaranteed by design, not subject to production testing.

Electrical Characteristics (Cont.) (T

Symbol

Parameter Test Conditions

= 25°C unless otherwise noted)

A

APM2323AA

Min. Typ. Max.

DYNAMIC CHARACTERISTICS b

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz

C

Input Capacitance - 375

iss

C

Output Capacitance - 70 -

oss

C

Reverse Transfer Capacitance

rss

t

Turn-on Delay Time - 6 12

d(ON)

Tr Turn-on Rise Time - 14 26

t

Turn-off Delay Time - 27 50

d(OFF)

VGS=0V,
VDS=-10V,
Frequency=1.0MHz

VDD=-10V, RL=10Ω,
IDS=-1A, V

GEN

=-4.5V,

RG=6Ω

Tf Turn-off Fall Time

- 11 -

- 50 -

- 17 32

GATE CHARGE CHARACTERISTICS b

Qg Total Gate Charge - 4 6 nC
Qgs Gate-Source Charge - 0.5 ­Qgd Gate-Drain Charge

Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

VDS=-10V, VGS=-4.5V,
IDS=-2.5A

- 1.5 -

Unit

Ω

­pF

ns

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

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APM2323AA

Typical Operating Characteristics

Power Dissipation

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Ptot - Power (W)

0.3

0.2

0.1
TA=25oC

0.0

0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

Safe Operation Area

30

10

Drain Current

3.0

2.5

2.0

1.5

1.0

-ID - Drain Current (A)

0.5

TA=25oC,VG=-4.5V

0.0
0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

Thermal Transient Impedance

2
1

Duty = 0.5

0.2

1

-ID - Drain Current (A)

0.1

0.01

0.01 0.1 1 10 100

Rds(on) Limit

TA=25oC

-VDS - Drain - Source Voltage (V)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

300µs

1ms

10ms

100ms

DC

0.1

0.1

0.01

Normalized Transient Thermal Resistance

1E-3

1E-4 1E-3 0.01 0.1 1 10 100

0.05

0.02

0.01

Single Pulse

Mounted on 1in2 pad
R

: 150 oC/W

θJA

Square Wave Pulse Duration (sec)

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APM2323AA

Typical Operating Characteristics ( Cont.)

Output Characteristics

10

9
8
7
6
5
4
3

VGS= -2.5,-3,-4,-5,-6,-7,-8,-9,-10V

-ID - Drain Current (A)

2
1
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-2V

-1.5V

-1V

-VDS - Drain - Source Voltage (V)

Drain-Source On Resistance

200

180

ID=-2.5A

Drain-Source On Resistance

260
240

VGS=-1.8V

220
200
180
160
140
120
100

80

RDS(ON) - On - Resistance (mΩ)

60
40

0 2 4 6 8 10

VGS=-2.5V

VGS=-4.5V

-ID - Drain Current (A)

Gate Threshold Voltage

1.8

1.6

IDS = -250µA

160

140

120

100

80

RDS(ON) - On - Resistance (mΩ)

60

40

1 2 3 4 5 6 7 8 9 10

-VGS - Gate - Source Voltage (V)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

1.4

1.2

1.0

0.8

0.6

0.4

Normalized Threshold Voltage

0.2

0.0

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

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APM2323AA

Typical Operating Characteristics ( Cont.)

Drain-Source On Resistance

1.8
VGS = -4.5V

1.6

IDS = -2.5A

1.4

1.2

1.0

0.8

0.6

Normalized On Resistance

0.4

0.2

0.0

-50 -25 0 25 50 75 100 125 150

RON@Tj=25oC: 90mΩ

Tj - Junction Temperature (°C)

Capacitance

550
500
450
400
350
300
250
200
150

C - Capacitance (pF)

100

Crss

50

Frequency=1MHz

Coss

Ciss

Source-Drain Diode Forward

10

Tj=150oC

1

Tj=25oC

-IS - Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD - Source - Drain Voltage (V)

Gate Charge

5.0
VDS= -10V

4.5

IDS= -2.5A

4.0

3.5

3.0

2.5

2.0

1.5

1.0

-VGS - Gate-source Voltage (V)

0.5

0

0 4 8 12 16 20

-VDS - Drain - Source Voltage (V)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

0.0

0 1 2 3 4 5

QG - Gate Charge (nC)

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APM2323AA

Package Information

SOT-23

D

e

SEE

VIEW A

E

E1

MIN.

0.000

0.035

0.003

0.106

0.055

0.012
0

c

L

INCHES

0.037 BSC

0.075 BSC

0

MAX.

0.057

0.006

0.051

0.0200.012

0.009

0.122

0.1180.102

0.071

0.024

b

e1

A2A1

A

VIEW A

S
Y
M
B
O
L

A
A1
A2

b
c

D
E

E1

e

e1

L

0

Note : Dimension D and E1 do not include mold flash, protrusions or gate
burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil
per side.

MILLIMETERS

MIN.

0.00

0.90

0.30

0.08

2.70

2.60

1.40

0.95 BSC

1.90 BSC

0.30
0

MAX.

1.45

0.15

1.30

0.50

0.22

3.10

3.00

1.80

0.60

SOT-23

8

0.25
GAUGE PLANE

SEATING PLANE

8

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

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APM2323AA

Carrier Tape & Reel Dimensions

P0

OD0

B0

P2

P1

A

E1

F

W

Application

SOT-23

K0

SECTION A-A

T1

B

A

H

A0

SECTION B-B

OD1

B

T

A

d

A H T1 C d D W E1 F

178.0±2.00 50 MIN.

8.4+2.00

-0.00

13.0+0.50

-0.20

1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0

4.0±0.10 4.0±0.10 2.0±0.05

1.5+0.10

-0.00

1.0 MIN.

0.6+0.00

-0.40

3.20±0.20 3.10±0.20 1.50±0.20

(mm)

Devices Per Unit

Package Type Unit Quantity

SOT-23

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

Tape & Reel 3000

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APM2323AA

Taping Direction Information

SOT-23

USER DIRECTION OF FEED

Reflow Condition (IR/Convection or VPR Reflow)

T

P

Ramp-up

T

L

Tsmax

Tsmin

Temperature

ts

Preheat

25

°

t 25 C to Peak

Reliability Test Program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003
HOLT MIL-STD-883D-1005.7
PCT JESD-22-B, A102
TST MIL-STD-883D-1011.9

tp

Ramp-down

Time

t

L

245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C

-65°C~150°C, 200 Cycles

Critical Zone

TL to T

P

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

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APM2323AA

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate
(TL to TP)
Preheat

- Temperature Min (Tsmin)

- Temperature Max (Tsmax)

- Time (min to max) (ts)

Time maintained above:

- Temperature (TL)

- Time (tL)

Peak/Classification Temperature (Tp)
Time within 5°C of actual

Peak Temperature (tp)
Ramp-down Rate

Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures

Package Thickness Volume mm

<2.5 mm
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

Package Thickness Volume mm3

<350

<1.6 mm

1.6 mm – 2.5 mm
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*

*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated

classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.

260 +0°C* 260 +0°C* 260 +0°C*
260 +0°C* 250 +0°C* 245 +0°C*

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

See table 1 See table 2

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

3

<350

240 +0/-5°C 225 +0/-5°C

Volume mm3

350-2000

150°C
200°C

60-180 seconds

217°C

60-150 seconds

Volume mm

≥350

Volume mm3

3

>2000

Customer Service

Anpec Electronics Corp.

Head Office :

No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : [phone]
Fax : [phone]

Taipei Branch :

2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : [phone]
Fax : [phone]

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008

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