Anpec APM2323AA Schematic [ru]
APM2323AA
P-Channel Enhancement Mode MOSFET
Features
• -20V/-2.5A ,
R
R
= 90mΩ(typ.) @ VGS= -4.5V
DS(ON)
= 130mΩ(typ.) @ VGS= -2.5V
DS(ON)
R
= 200mΩ(typ.) @ VGS= -1.8V
DS(ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems
Pin Description
D
S
G
Top View of SOT-23
D
G
S
P-Channel MOSFET
Ordering and Marking Information
Package Code
APM2323A
Assembly Material
Handling Code
Temperature Range
Package Code
APM2323A A :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL c lassification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
A23X
A : SOT-23
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
X - Date Code
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APM2323AA
mΩ
Absolute Maximum Ratings (T
Symbol
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
*
Continuous Drain Current
D
I
*
DM
I
T
P
R
Note : *Surface Mounted on 1in
300µs Pulsed Drain Current
*
Diode Continuous Forward Current
S
TJ
Maximum Junction Temperature
Storage Temperature Range -55 to 150
STG
*
Maximum Power Dissipation
D
*
Thermal Resistance-Junction to Ambient
θJA
2
pad area, t ≤ 10sec.
Electrical Characteristics (T
Symbol
Parameter Test Conditions
Parameter Rating Unit
= 25°C unless otherwise noted)
A
= 25°C unless otherwise noted)
A
VGS=-4.5V
TA=25°C 0.83
TA=100°C
APM2323AA
Min. Typ. Max.
-20
±12
-2.5
-10
-1
150
0.3
150
V
A
A
°C
W
°C/W
Unit
STATIC CHARACTERISTICS
BV
Drain-Source Breakdown Voltage
DSS
VGS=0V, IDS=-250µA
-20 - - V
VDS=-16V, VGS=0V - - -1
I
Zero Gate Voltage Drain Current
DSS
V
Gate Threshold Voltage
GS(th)
I
Gate Leakage Current VGS=±10V, VDS=0V - - ±10
GSS
TJ=85°C - - -30
VDS=VGS, IDS=-250µA
-0.5 -0.7
VGS=-4.5V, IDS=-2.5A - 90 120
R
DS(ON)
Resistance
VGS=-2.5V, IDS=-1.8A - 130 180
Drain-Source On-state
a
VGS=-1.8V, IDS=-0.5A - 200 300
DIODE CHARACTERISTICS
a
V
Diode Forward Voltage ISD=-1A, VGS=0V - -0.8 -1.3
SD
t
Reverse Recovery Time - 17 - ns
rr
Q
Reverse Recovery Charge
rr
ISD=-2.5A, dlSD/dt=100A/µs
- 9 - nC
µA
-1 V
µA
V
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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APM2323AA
Note b : Guaranteed by design, not subject to production testing.
Electrical Characteristics (Cont.) (T
Symbol
Parameter Test Conditions
= 25°C unless otherwise noted)
A
APM2323AA
Min. Typ. Max.
DYNAMIC CHARACTERISTICS b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz
C
Input Capacitance - 375
iss
C
Output Capacitance - 70 -
oss
C
Reverse Transfer Capacitance
rss
t
Turn-on Delay Time - 6 12
d(ON)
Tr Turn-on Rise Time - 14 26
t
Turn-off Delay Time - 27 50
d(OFF)
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=10Ω,
IDS=-1A, V
GEN
=-4.5V,
RG=6Ω
Tf Turn-off Fall Time
- 11 -
- 50 -
- 17 32
GATE CHARGE CHARACTERISTICS b
Qg Total Gate Charge - 4 6 nC
Qgs Gate-Source Charge - 0.5 Qgd Gate-Drain Charge
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
VDS=-10V, VGS=-4.5V,
IDS=-2.5A
- 1.5 -
Unit
Ω
pF
ns
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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APM2323AA
Typical Operating Characteristics
Power Dissipation
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Ptot - Power (W)
0.3
0.2
0.1
TA=25oC
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
30
10
Drain Current
3.0
2.5
2.0
1.5
1.0
-ID - Drain Current (A)
0.5
TA=25oC,VG=-4.5V
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
1
-ID - Drain Current (A)
0.1
0.01
0.01 0.1 1 10 100
Rds(on) Limit
TA=25oC
-VDS - Drain - Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
300µs
1ms
10ms
100ms
DC
0.1
0.1
0.01
Normalized Transient Thermal Resistance
1E-3
1E-4 1E-3 0.01 0.1 1 10 100
0.05
0.02
0.01
Single Pulse
Mounted on 1in2 pad
R
: 150 oC/W
θJA
Square Wave Pulse Duration (sec)
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