ANPEC APM2322AC-TR Datasheet
APM2322
N-Channel Enhancement Mode MOSFET
Features
• 20V/1.5A , R
R
••
• Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• SOT-23 Package
••
=195mΩ(typ.) @ VGS=4.5V
DS(ON)
=295mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
D
G
S
Top View of SOT-23
D
G
S
N-Channel MOSFET
APM 2322
Handling Code
Temp. Range
Package Code
APM 2322 A : M22X
Absolute Maximum Ratings
Package Code
A : SO T -2 3
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TR : Tape & R eel
X - Date Code
°
(TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
V
Drain-Source Voltage 20
DSS
V
Gate-Source Voltage ±8
GSS
*
I
Maximum Drain Current – Continuous 1.5
D
IDM
Maximum Drain Current – Pulsed(Pulse width ≤ 300µs)
5.6
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw1
APM2322
q
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
TA=25°C
0.8
W
=100°C
T
A
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
*
R
θ
JA
Thermal Resistance – Junction to Ambient 150
0.3
°C
°C
°C/W
Electrical Characteristics (T
Symbol Parameter Test Condition
= 25°C unless otherwise noted)
A
APM2322
Min.
Typ. Max.
Unit
Static
BV
V
R
DS(ON)
V
I
DSS
GS(th)
I
GSS
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=0.5A , VGS=0V
SD
V
=0V , IDS=250µA
GS
V
=16V , VGS=0V 1 µA
DS
V
DS=VGS
=±8V , VDS=0V
V
GS
VGS=4.5V , IDS=1.5A
V
=2.5V , IDS=0.8A
GS
, IDS=250µA
20
0.6 0.75 1.5
±10
195 260
295 350
0.8 1.3
V
V
A
µ
mΩ
V
Dynamicb
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Tim e
d(ON)
Tr Turn-on R ise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
V
=10V , IDS= 1.5A
DS
V
=4.5V
GS
V
=10V , IDS=1.5A,
DD
V
=4.5V , RG=6Ω
GEN
V
=0V
GS
V
=15V
DS
Fre
uency=1.0MHz
1.4 1.8
0.22
0.33
6 15
5 11
12 24
6 15
152
48
32
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw2
APM2322
Typical Characteristics
Output Characteristics
6
5
4
3
2
ID-Drain Current (A)
1
0
012345
VGS=3,4,5,6,7,8,9,10V
VGS=2V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.4
IDS=250µA
Transfer Characteristics
6
5
4
3
2
ID-Drain Current (A)
1
0
01234
Tj=-55oC
Tj=25oC
Tj=125oC
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.36
1.2
1.0
0.8
(Normalized)
0.6
VGS(th)-Threshold Voltage (V)
0.4
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
0.32
0.28
0.24
0.20
0.16
RDS(ON)-On-Resistance (Ω)
0.12
0123456
VGS=2.5V
VGS=4.5V
ID - Drain Current (A)
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