ANPEC APM2322AC-TR Datasheet

APM2322

N-Channel Enhancement Mode MOSFET

Features

• 20V/1.5A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

=195mΩ(typ.) @ VGS=4.5V

DS(ON)

=295mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

D

G

S

N-Channel MOSFET

APM 2322

Handling Code
Temp. Range
Package Code

APM 2322 A : M22X

Absolute Maximum Ratings

Package Code
A : SO T -2 3
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TR : Tape & R eel

X - Date Code

°

(TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

V

Drain-Source Voltage 20

DSS

V

Gate-Source Voltage ±8

GSS

*

I

Maximum Drain Current – Continuous 1.5

D

IDM

Maximum Drain Current – Pulsed(Pulse width ≤ 300µs)

5.6

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

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APM2322

q

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD Maximum Power Dissipation

TA=25°C

0.8
W

=100°C

T

A

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

*

R

θ

JA

Thermal Resistance – Junction to Ambient 150

0.3

°C
°C

°C/W

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM2322

Min.

Typ. Max.

Unit

Static

BV

V

R

DS(ON)

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=0.5A , VGS=0V

SD

V

=0V , IDS=250µA

GS

V

=16V , VGS=0V 1 µA

DS

V

DS=VGS

=±8V , VDS=0V

V

GS

VGS=4.5V , IDS=1.5A
V

=2.5V , IDS=0.8A

GS

, IDS=250µA

20

0.6 0.75 1.5
±10

195 260
295 350

0.8 1.3

V

V

A

µ

mΩ

V

Dynamicb

Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge

t

Turn-on Delay Tim e

d(ON)

Tr Turn-on R ise Time

t

Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

V

=10V , IDS= 1.5A

DS

V

=4.5V

GS

V

=10V , IDS=1.5A,

DD

V

=4.5V , RG=6Ω

GEN

V

=0V

GS

V

=15V

DS

Fre

uency=1.0MHz

1.4 1.8

0.22

0.33
6 15
5 11
12 24
6 15
152
48
32

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

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APM2322

Typical Characteristics

Output Characteristics

6

5

4

3

2

ID-Drain Current (A)

1

0

012345

VGS=3,4,5,6,7,8,9,10V

VGS=2V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.4

IDS=250µA

Transfer Characteristics

6

5

4

3

2

ID-Drain Current (A)

1

0

01234

Tj=-55oC

Tj=25oC

Tj=125oC

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.36

1.2

1.0

0.8

(Normalized)

0.6

VGS(th)-Threshold Voltage (V)

0.4

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

0.32

0.28

0.24

0.20

0.16

RDS(ON)-On-Resistance (Ω)

0.12
0123456

VGS=2.5V

VGS=4.5V

ID - Drain Current (A)

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APM2322

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.40

0.35

0.30

0.25

0.20

0.15

RDS(ON)-On-Resistance (Ω)

0.10
12345678

VGS - Gate-to-Source V oltage (V)

IDs=1.5A

Gate Charge

5

VDS=10 V
I

= 1.5A

DS

4

RDS(ON)-On-Resistance

On-Resistance vs. Junction T emperature

1.75

VGS=4.5V

Ds=1.5A

I

1.50

1.25

1.00

(Normalized)

0.75

RON@Tj=25°C :195mΩ

0.50

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

200

160

Capacitance

Frequency=1MHz

Ciss

3

2

1

VGS-Gate-Source Voltage (V)

0

0.0 0.3 0.6 0.9 1.2 1.5

Q

G - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

120

80

Capacitance (pF)

40

0

0 4 8 121620

Coss
Crss

VDS - Drain-to-Source V oltage (V)

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APM2322

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

6

1

TJ=150°C

0.1

TJ=25°C

IS-Source Current (A)

0.01

0.0 0.4 0.8 1.2 1.6

VSD -Source-to-Drain V oltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

14

12

10

8

6

TA=25°C

Power (W)

4

2

0

0.01 0.1 1 10 100

500

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

D=0.01

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=150°C/W

3.TJM-TA=PDMZthJA

500

Square Wave Pulse Duration (sec)

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APM2322

Packaging Information

SOT-23

D
B

3

1

S

e

E H

2

A

Dim

A1

L

Millimeters Inches

Min. Max. Min. Max.

C

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0. 000 0.004

B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071

e 1.90 BSC 0.075 BSC

H 2.40 3.00 0.094 0.118

L 0.37 0.0015

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

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APM2322

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 C a te g ory 3 .

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM2322

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape

W

t

E

F

A

Po

J

P

P1

Ao

C

D

Bo

Ko

D1

T2

B

Application

A B C J T1 T2 W P E

178±172 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3

SOT-23

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

T1

8.0+ 0.3

- 0.3

4 ± 0.1 1.75± 0.1

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APM2322

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 23

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

8 5.3 3000

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

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