Anpec APM2322AA Schematic [ru]
APM2322AA
N-Channel Enhancement Mode MOSFET
Features
• 20V/1.7A ,
R
R
R
= 120mΩ(typ.) @ VGS=4.5V
DS(ON)
= 180mΩ(typ.) @ VGS=2.5V
DS(ON)
= 280mΩ(typ.) @ VGS=1.8V
DS(ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Pin Description
D
S
G
Top View of SOT-23
D
G
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
APM2322A
Assembly Material
Handling Code
Temperature Range
Package Code
APM2322A A :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL c lassification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
A22X
A : SOT-23
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
X - Date Code
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APM2322AA
mΩ
Absolute Maximum Ratings (T
Symbol
V
Drain-Source Voltage 20
DSS
V
Gate-Source Voltage ±12
GSS
Parameter Rating Unit
= 25°C unless otherwise noted)
A
ID* Continuous Drain Current 1.7
VGS=4.5V
IDM*
300µs Pulsed Drain Current
7
IS* Diode Continuous Forward Current 1 A
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
TA=25°C 0.83
PD* Maximum Power Dissipation
TA=100°C 0.3
R
Note : *Surface Mounted on 1in
Electrical Characteristics (T
Thermal Resistance-Junction to Ambient 150 °C/W
*
θJA
2
pad area, t ≤ 10sec.
= 25°C unless otherwise noted)
A
V
A
°C
W
Symbol
Parameter Test Conditions
Min. Typ. Max.
STATIC CHARACTERISTICS
APM2322AA
BV
Drain-Source Breakdown Voltage
DSS
VGS=0V, IDS=250µA
20 - - V
VDS=16V, VGS=0V - - 1
I
Zero Gate Voltage Drain Current
DSS
V
Gate Threshold Voltage
GS(th)
I
Gate Leakage Current VGS=±10V, VDS=0V - - ±10
GSS
TJ=85°C
VDS=VGS, IDS=250µA
- - 30
0.5 0.7 1 V
VGS=4.5V, IDS=1.7A - 120 160
DS(ON)
a
Drain-Source On-State Resistance
VGS=2.5V, IDS=1.3A - 180 250
R
VGS=1.8V, IDS=0.5A - 280 450
DIODE CHARACTERISTICS
a
V
Diode Forward Voltage ISD=1A, VGS=0V - 0.8 1.3 V
SD
t
Reverse Recovery Time - 14 - ns
rr
Q
Reverse Recovery Charge
rr
ISD=1.7A, dlSD/dt=100A/µs
- 4 - nC
Unit
µA
µA
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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APM2322AA
Electrical Characteristics (Cont.) (T
Symbol
Parameter Test Conditions
= 25°C unless otherwise noted)
A
APM2322AA
Min. Typ. Max.
DYNAMIC CHARACTERISTICS b
RG Gate resistance VGS=0V,VDS=0V,F=1MHz - 7 -
C
Input Capacitance - 115
iss
C
Output Capacitance - 35 -
oss
C
Reverse Transfer Capacitance
rss
t
Turn-on Delay Time - 2 5
d(ON)
Tr Turn-on Rise Time - 14 26
t
Turn-off Delay Time - 12 23
d(OFF)
Tf Turn-off Fall Time
VGS=0V,
VDS=10V,
Frequency=1.0MHz
VDD=10V, R
IDS=1A, V
GEN
=10Ω,
L
=4.5V,
RG=6Ω
- 25 -
- 2 5
GATE CHARGE CHARACTERISTICS b
Qg Total Gate Charge - 1.8 2.5
Qgs Gate-Source Charge - 0.3 -
Qgd Gate-Drain Charge
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
VDS=10V, VGS=4.5V,
IDS=1.7A
- 0.7 -
Unit
Ω
pF
ns
nC
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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APM2322AA
Typical Operating Characteristics
Power Dissipation
1.0
0.9
0.8
0.7
0.6
0.5
- Power (W)
0.4
tot
P
0.3
0.2
0.1
TA=25oC
0.0
0 20 40 60 80 100 120 140 160
Tj - Junc tion Temperature (°C)
Safe Operation Area
30
Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
- Drain Current (A)
D
I
0.6
0.4
0.2
TA=25oC,VG=4.5V
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
10
1
- Drain Current (A)
D
I
0.1
0.01
0.01 0.1 1 10 100
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
Rds(on) Limit
TA=25oC
VDS - Drain - Source Voltage (V)
300µs
1ms
10ms
100ms
DC
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
Normalized Transient Thermal Resistance
0.01
1E-4 1E-3 0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
Duty = 0.5
Mounted on 1in2 pad
R
: 150 oC/W
θJA
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