ANPEC APM2321AC-TR Datasheet

APM2321
P-Channel Enhancement Mode MOSFET
Features
-20V/-0.9A , R
R
••
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
Reliable and Rugged
••
••
SOT-23 Package
••
=370m(typ.) @ VGS=-4.5V
DS(ON)
=560m(typ.) @ VGS=-2.5V
DS(ON)
Pin Description
Applications
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered Systems.
D
G
S
Top View of SOT-23
S
G
D
P-Channel MOSFET
APM 2321
Handling Code Temp. Range Package Code
APM 2321A : M21X
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage -20 Gate-Source Voltage ±10 Maximum Drain Current – Continuous -0.9 Maximum Drain Current – Pulsed -3.6
Parameter Rating Unit
Package Code A : SO T -2 3 Operating Junction Temp. Range C : -5 5 to 1 5 0 C Handling Code TR : Tape & R eel
X - Date Code
°
(TA = 25°C unless otherwise noted)
V
A
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
1
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APM2321
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150 Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 100
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q Q Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown
DSS
Voltage Zero Gate Voltage Drain
Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=-0.5A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time Turn-on R ise Time
r
Turn-off Delay Time Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Parameter Rating Unit
TA=25°C T
=100°C
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=-250µA
GS
V
=-16V , VGS=0V -1 µA
DS
V V
, IDS=-250µA
DS=VGS
=±10V , VDS=0V
GS
VGS=-4.5V , IDS=-0.9A
=-2.5V , IDS=-0.8A
V
GS
V
=-10V , IDS= -0.9A ,
DS
V
=-4.5V
GS
=-10V , IDS=-0.9A ,
V
DD
V
=-4.5V , RG=6
GEN
V
=0V
GS
V
=-15V
DS
Frequency=1.0 M Hz
= 25°C unless otherwise noted)
A
1.25
0.5
°
APM2321
Min.
Typ. Max.
-20 V
-0.6 -0.8 -1 ±100
370 520 560 800
-0.8 -1.3
6.8 9 1
1.1 510 812
9.6 15 510
165
55 40
W
C
°
C
°
C/W
Unit
V
nA
m
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
2
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APM2321
Typical Characteristics
Output Characteristics
5
4
3
2
-ID-Drain Current (A)
1
0
012345
-VGS=4,5,6,7,8,9,10V
-VGS=3V
-VGS=2V
-VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.6
1.4
1.2
-IDS=250µA
Transfer Characteristics
3.6
3.0
2.4
1.8
1.2
-ID-Drain Current (A)
0.6
0.0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=125°C
TJ=25°C
TJ=-55°C
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0
0.8
1.0
0.8
0.6
(Normalized)
0.4
0.2
-VGS(th)-Threshold Voltage (V)
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003
0.6
0.4
0.2
-VGS=2.5V
-VGS=4.5V
RDS(ON)-On-Resistance ()
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
-ID - Drain Current (A)
3
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