ANPEC APM2318AC-TRL, APM2318AC-TR Datasheet

APM2318

N-Channel Enhancement Mode MOSFET

Features

• 30V/3A, R

R
R

••

•

Super High Dense Cell Design for Extremely

••

••

• SOT-23 Package

••

=35mΩ(typ.) @ VGS=10V

DS(ON)

=40mΩ(typ.) @ VGS=4.5V

DS(ON)

=60mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer.

• Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

Package Code

APM 2318

Lead Free Code
Handling Code
Tem p. Range
Package Code

A : SOT-23

Operating Junction Temp. Range

C : -55 to 125 C

Handling Code

TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device

D

3

12

G

S

Top View of SOT-23

D

G

S

N-Channel MOSFET

°

APM 2318 A :

M18X

Absolute Maximum Ratings (T

X - D a te C o d e

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

Drain-Source Voltage 30
Gate-Source Voltage ±12
Maximum Drain Current – Continuous 3
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)

V

A

12

V

IDM

DSS

GSS

ID



ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

www.anpec.com.tw1

APM2318

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

TA=25°C 0.8

W

R

T

PD

TJ

STG

θ

Maximum Power Dissipation

T

=100°C 0.3

A

Maximum Junction Temperature
Storage Temperature Range -55 to 150 °C

*

JA

Thermal Resistance – Junction to Ambient 150 °C/W

150 °C

*Surface Mounted on FR4 Board.

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM2318

Min. Typ. Max.

Unit

Static

BV

I

V

I

DSS

DSS

GS(th)

GSS

Drain-Source Breakdown
Voltage

Zero Gate Voltage Drain
Current

Gate Threshold Voltage

Gate Leakage Current

V

=0V, IDS=250µA

GS

VDS=24V, VGS=0V
V

DS=VGS

V

GS

, IDS=250µA

=±12V, VDS=0V

30 V



1

µA

0.6 0.75 1.5 V



±100

nA

VGS=10V, IDS=3A  35 50

Drain-Source On-state

R

a

DS(ON)

V

SD

Resistance

a

Diode Forward Voltage ISD=0.5A, VGS=0V 0.7 1.3 V

VGS=4.5V, IDS=1.5A  40 55

=2.5V, IDS=0.5A  60 80

V

GS

Dynamicb

Qg Total Gate Charge  5.3 6.7

V

=10V, VGS=4.5V,

Qgs Gate-Source Charge  0.8

Qgd Gate-Drain Charge

t

Turn-on Delay Time  11 22

d(ON)

tr Turn-on Rise Time  17 32

t

Turn-off Delay Time  37 68

d(OFF)

tf Turn-off Fall Time

C

iss

C

oss

C

rss

Input Capacitance  318

Output Capacitance  24

Reverse Transfer

DS

I

=3A

DS

V

=15V,ID=3A,

DD

V

=10V, RG=6Ω

GS

=0V

V

GS

=25V

V

DS

Frequency=1.0MHz

 0.8

 20 38

 14

Notes: a: Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.

b

: Guaranteed by design, not subject to production testing.

mΩ

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

www.anpec.com.tw2

APM2318

Typical Characteristics

12

10

Output Characteristics

VGS=2,3,4,5,6,7,8 ,9,1 0 V

8

6

4

VGS=1.5V

ID-Drain Current (A)

2

0

012345678910

Threshold Voltage vs. Temperature

1.6

1.4

1.2

1.0

0.8

0.6

(Normalzed)

0.4

IDS =250µA

VGS(th)-Threshold V oltage

0.2

0.0

-50 -25 0 25 50 75 100 125 150

Transfer Characteristics

12

10

8

6

4

ID-Drain Current (A)

2

0

0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0

Tj=125oC

Tj=25oC

Tj=-55oC

VGS - Gate-to-Source V oltage (V)VDS - Drain-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.10

0.09

0.08

0.07

0.06

0.05

0.04

DS(on)-On-Resistance (Ω)

R

0.03

0.02

0.01

0.00

VGS=10V

012345678910

VGS=4.5V

VGS=2.5V

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

ID - Drain Current (A)

www.anpec.com.tw3