APM2318
N-Channel Enhancement Mode MOSFET
Features
• 30V/3A, R
R
R
••
•
Super High Dense Cell Design for Extremely
••
••
• SOT-23 Package
••
=35mΩ(typ.) @ VGS=10V
DS(ON)
=40mΩ(typ.) @ VGS=4.5V
DS(ON)
=60mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer.
• Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
Package Code
APM 2318
Lead Free Code
Handling Code
Tem p. Range
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 125 C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
D
3
12
G
S
Top View of SOT-23
D
G
S
N-Channel MOSFET
°
APM 2318 A :
M18X
Absolute Maximum Ratings (T
X - D a te C o d e
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
Drain-Source Voltage 30
Gate-Source Voltage ±12
Maximum Drain Current – Continuous 3
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)
V
A
12
V
IDM
DSS
GSS
ID
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw1
APM2318
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
TA=25°C 0.8
W
R
T
PD
TJ
STG
θ
Maximum Power Dissipation
T
=100°C 0.3
A
Maximum Junction Temperature
Storage Temperature Range -55 to 150 °C
*
JA
Thermal Resistance – Junction to Ambient 150 °C/W
150 °C
*Surface Mounted on FR4 Board.
Electrical Characteristics (T
Symbol Parameter Test Condition
= 25°C unless otherwise noted)
A
APM2318
Min. Typ. Max.
Unit
Static
BV
I
V
I
DSS
DSS
GS(th)
GSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
V
=0V, IDS=250µA
GS
VDS=24V, VGS=0V
V
DS=VGS
V
GS
, IDS=250µA
=±12V, VDS=0V
30 V
1
µA
0.6 0.75 1.5 V
±100
nA
VGS=10V, IDS=3A 35 50
Drain-Source On-state
R
a
DS(ON)
V
SD
Resistance
a
Diode Forward Voltage ISD=0.5A, VGS=0V 0.7 1.3 V
VGS=4.5V, IDS=1.5A 40 55
=2.5V, IDS=0.5A 60 80
V
GS
Dynamicb
Qg Total Gate Charge 5.3 6.7
V
=10V, VGS=4.5V,
Qgs Gate-Source Charge 0.8
Qgd Gate-Drain Charge
t
Turn-on Delay Time 11 22
d(ON)
tr Turn-on Rise Time 17 32
t
Turn-off Delay Time 37 68
d(OFF)
tf Turn-off Fall Time
C
iss
C
oss
C
rss
Input Capacitance 318
Output Capacitance 24
Reverse Transfer
DS
I
=3A
DS
V
=15V,ID=3A,
DD
V
=10V, RG=6Ω
GS
=0V
V
GS
=25V
V
DS
Frequency=1.0MHz
0.8
20 38
14
Notes: a: Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.
b
: Guaranteed by design, not subject to production testing.
mΩ
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw2
APM2318
Typical Characteristics
12
10
Output Characteristics
VGS=2,3,4,5,6,7,8 ,9,1 0 V
8
6
4
VGS=1.5V
ID-Drain Current (A)
2
0
012345678910
Threshold Voltage vs. Temperature
1.6
1.4
1.2
1.0
0.8
0.6
(Normalzed)
0.4
IDS =250µA
VGS(th)-Threshold V oltage
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Transfer Characteristics
12
10
8
6
4
ID-Drain Current (A)
2
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
Tj=125oC
Tj=25oC
Tj=-55oC
VGS - Gate-to-Source V oltage (V)VDS - Drain-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.10
0.09
0.08
0.07
0.06
0.05
0.04
DS(on)-On-Resistance (Ω)
R
0.03
0.02
0.01
0.00
VGS=10V
012345678910
VGS=4.5V
VGS=2.5V
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
ID - Drain Current (A)
www.anpec.com.tw3
APM2318
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.10
0.09
0.08
0.07
0.06
0.05
0.04
RDS(on)-On-Resistance (Ω)
0.03
0.02
012345678910
ID=3A
VGS - Gate-to-Source V oltage (V)
Gate Charge
5
VDS= 10 V
I
= 3 A
D
4
On-Resistance vs. Junction T emperature
2.0
1.8
1.6
1.4
1.2
1.0
(Normalized)
0.8
0.6
RDS(on)-On-Resistance
0.4
0.2
500
400
VGS = 10V
I
= 3A
DS
RON@Tj =25°C: 35m
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Ciss
Capacitance
Frequency=1M Hz
Ω
3
2
1
VGS-Gate-Source Voltage (V)
0
0123456
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
300
200
Capacitance (pF)
100
0
0 5 10 15 20 25 30
Coss
VDS - Drain-to-Source V oltage (V)
www.anpec.com.tw4
Crss
APM2318
Typical Characteristics
Source-Drain Diode Forward Voltage
10
Tj=150oC
1
Tj=25oC
IS-Source Current (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD -Source-to-Drain V oltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Single Pulse Power
300
250
200
150
Power (W)
100
50
0
1E-4 1E-3 0.01 0.1 1 10 100300
Surface Mounted
TA=25oC
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
Thermal Impedance
D=0.05
D=0.02
Normalized Effective Transient
D=0.01
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10 100 300
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
Square Wave Pulse Duration (sec)
P
DM
t
1
t
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
3.TJM-TA=PDMZ
4.Surface Mounted
2
thJA
thJA
www.anpec.com.tw5
=150oC/W
APM2318
Package Information
SOT-23
D
B
3
1
S
e
E H
2
A
Dim
A1
L
Millimeters Inches
Min. Max. Min. Max.
C
A 1.00 1.30 0.039 0.051
A1 0.00 0.10 0.000 0.004
B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071
e 1.90 BSC 0.075 BSC
H 2.40 3.00 0.094 0.118
L 0.37 0.0015
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw6
APM2318
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.
VPR
Package Reflow Conditions
pkg. thickness
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
2.5mm
≥≥≥≥
pkg. thickness < 2.5mm and
pkg. volume
350 mm³
≥≥≥≥
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
www.anpec.com.tw7
APM2318
F
R e lia bility te s t p ro gra m
SOLDERA BILITY MIL-STD-883D-2003
HO LT MIL-STD-883D-1005.7
PCT JESD-22-B, A102
TST MIL-STD-883D-1011.9
245°C , 5 SEC
1000 Hrs Bias @ 125 °C
168 Hrs, 100 % RH , 121°C
-65°C ~ 150°C, 200 Cycles
ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V
La tc h -Up J E S D 78 1 0 ms , Itr > 100mA
Test item Method Description
Carrier Tape
W
E
F
Po
P
P1
Ao
D
Bo
D1
t
Ko
T2
J
C
Application
SOT-23
A
A B C J T1 T2 W P E
178±1 60 ± 1.0 12.0 2.5 ± 0.15 9.0 ± 0.5 1.4
F D D1 Po P1 Ao Bo Ko t
3.5 ± 0.05 1.5 +0.1
0.1MIN 4.0 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03
B
T1
8.0+ 0.3
- 0.3
4.0 1.75
(mm)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw8
APM2318
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOT- 23
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
8 5.3 3000
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw9
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