ANPEC APM2314AC-TR Datasheet

APM2314

N-Channel Enhancement Mode MOSFET

Features

• 20V/2.8A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

=45mΩ(typ.) @ VGS=4.5V

DS(ON)

=55mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

D

G

S

N-Channel MOSFET

APM2314

Handling Code

Temp. Range

Package Code

APM 2314 A : M14X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 20

Gate-Source Voltage ±10

Maximum Drain Current – Continuous 2.8

Maximum Drain Current – Pulsed 10

Parameter Rating Unit

Package Code
A : SO T-23
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

www.anpec.com.tw1

APM2314

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown

DSS

Voltage

Zero Gate Voltage Drain
Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=0.5A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time

Turn-on Rise Time

r

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C

T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=250µA

GS

V

=16V , VGS=0V 1 µA

DS

V

V

, IDS=250µA

DS=VGS

=±10V , VDS=0V

GS

VGS=4.5V , IDS=1.2A

=2.5V , IDS=0.8A

V

GS

V

=10V , IDS= 3A

DS

V

=4.5V

GS

V

=10V , IDS=1A,

DD

V

=4.5V , RG=6Ω,

GEN

R

=10Ω

L

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2314

Min.

Typ. Max.

20 V

0.5 0.7 1

±100

45 60

55 80

0.75 1.3

6.5 9

0.9

0.9

615

511

16 30

615

435

120

65

W

C

°

C

°

C/W

Unit

V

nA

mΩ

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

www.anpec.com.tw2

APM2314

Typical Characteristics

Output Characteristics

10

VGS=2,3,4,5,6,7,8,9,10V

8

6

4

ID-Drain Current (A)

2

0

0123456

VGS=1V

VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

1.25

1.00

0.75

IDS=250µA

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

Transfer Characteristics

10

8

6

4

ID-Drain Current (A)

2

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=125°C

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.09

0.08

0.07

0.06

0.05

RDS(ON)-On-Resistance (Ω)

0.04

0.03

0.02

0.01

VGS=2.5V

VGS=4.5V

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

0.00
012345678

ID - Drain Current (A)

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