ANPEC APM2313AC-TR Datasheet

APM2313

P-Channel Enhancement Mode MOSFET

Features

• -20V/-1.8A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

=108mΩ(typ.) @ VGS=-4.5V

DS(ON)

=135mΩ(typ.) @ VGS=-2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

S

G

D

P-Channel MOSFET

APM 2313

Handling Code
Temp. Range
Package Code

APM 2313 A : M13X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -20
Gate-Source Voltage ±10
Maximum Drain Current – Continuous -1.8
Maximum Drain Current – Pulsed -7

Parameter Rating Unit

Package Code
A : SO T -2 3
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TR : Tape & R eel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

www.anpec.com.tw1

APM2313

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-0.5A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

V

=-16V , VGS=0V -1

DS

V
V

, IDS=-250µA

DS=VGS

=±10V , VDS=0V

GS

VGS=-4.5V , IDS=-1.8A

=-2.5V , IDS=-0.8A

V

GS

V

=-10V , IDS= -1.8A ,

DS

V

=-4.5V

GS

=-10V , IDS=-1A ,

V

DD

V

=-4.5V , RG=6

GEN

V

=0V

GS

V

=-15V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2313

Min. Typ. Max.

-20 V

-0.5 -0.7 -1
100

±

108 140
135 175

-0.8 -1.3

5.3 7

1.04

0.62
816
715

18 35

815

435
120

65

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

www.anpec.com.tw2

APM2313

Typical Characteristics

Output Characteristics

7

6

5

4

3

2

-VGS=3,4,5,6,7,8,9,10V

-VGS=2V

-ID-Drain Current (A)

1

-VGS=1V

0

012345

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

1.25

1.00

0.75

-IDS=250µA

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Transfer Characteristics

7

6

5

4

3

2

-ID-Drain Current (A)

1

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=125°C

TJ=25°C

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.18

0.17

0.16

0.15

0.14

0.13

0.12

0.11

0.10

RDS(ON)-On-Resistance (Ω)

0.09

0.08
01234567

-VGS=2.5V

-VGS=4.5V

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

-ID - Drain Current (A)

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