ANPEC APM2312AC-TR Datasheet
APM2312
N-Channel Enhancement Mode MOSFET
Features
• 16V/5A , R
R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
• SOT-23 Package
••
=35mΩ(typ.) @ VGS=4.5V
DS(ON)
=45mΩ(typ.) @ VGS=2.5V
DS(ON)
=60mΩ(typ.) @ VGS=1.8V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
D
3
12
G
S
Top View of SOT-23
D
G
S
N-Channel MOSFET
APM2312
Handling Code
Temp. Range
Package Code
APM2312 A :
M12X
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage 16
Gate-Source Voltage ±8
Maximum Drain Current – Continuous 5
Maximum Drain Current – Pulsed 15
Parameter Rating Unit
Package Code
A : SOT-23
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
X - Date Code
= 25°C unless otherwise noted)
A
°
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - July., 2003
www.anpec.com.tw1
APM2312
y
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 100
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Notes
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=1.7 A , VGS=0V
SD
b
Total Ga te Charge
g
Gate-Source Charge
gs
Gate-Dra in C harge
gd
Turn - on Delay Time
Turn - on R ise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Parameter Rating Unit
TA=25°C
=100°C
T
A
= 25°C unless otherwise noted)
A
=0V , IDS=250µA
V
GS
V
=16V , VGS=0V 1
DS
V
V
, IDS=250µA
DS=VGS
=±8V , VDS=0V
GS
VGS=4.5V , IDS=5A
VGS=2.5V , IDS=4.5A
V
=1.8V , IDS=4A
GS
=10V , IDS= 1A
V
DS
=4.5V ,
V
GS
=10 V , IDS=1A ,
V
DD
V
=4.5V , RG=0.2
GEN
=0V
V
GS
V
=15V
DS
Ω
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
1.25
0.5
°
APM2312
Min. T
p. Max.
16 V
0.5 0.7 1
100
±
35 45
45 55
60 70
0.7 1.3
10 12
1.9
1.8
17 33
40 70
45 80
25 45
580
170
100
W
C
°
C
°
C/W
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.2 - July., 2003
www.anpec.com.tw2
APM2312
Typical Characteristics
12
10
Output Characteristics
VGS=2,3,4,5,6,7,8,9,10V
8
6
4
VGS=1.5V
ID-Drain Current (A)
2
VGS=1V
0
012345
VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
IDS=250uA
1.50
Transfer Characteristics
12
10
8
6
4
TJ=125°C
ID-Drain Current (A)
2
0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=25°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.08
0.07
1.25
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.2 - July., 2003
0.06
0.05
0.04
0.03
0.02
RDS(ON)-On-Resistance (Ω)
0.01
0.00
036912
VGS=2.5V
VGS=4.5V
ID - Drain Current (A)
www.anpec.com.tw3
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