ANPEC APM2307AC-TR Datasheet

APM2307

P-Channel Enhancement Mode MOSFET

Features

• -30V/-3A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

=100mΩ(typ.) @ VGS=-10V

DS(ON)

=140mΩ(typ.) @ VGS=-4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

APM2307

Handling Code

Temp. Range

Package Code

APM 2307 A : M07X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous -3

Maximum Drain Current – Pulsed -12

Parameter Rating Unit

Package Code
A : SO T-23
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003

www.anpec.com.tw1

APM2307

Absolute Maximum Ratings Cont. (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-1.25A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time

Turn-on Rise Time

r

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C

T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

V

=-24V , VGS=0V -1 µA

DS

V

V

, IDS=-250µA

DS=VGS

=±20V , VDS=0V

GS

VGS=-10V , IDS=-3A

=-4.5V , IDS=-2.5A

V

GS

=-15V , IDS=-3A

V

DS

=-10V

V

GS

=-15V , IDS=-1A ,

V

DD

=-10V , RG=6Ω

V

GEN

=15Ω

R

L

VGS=0V

=-25V

V

DS

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2307

Min.

Typ. Max.

-30 V

-1 -3

±100

100 120

140 170

0.6 1.3

813

1.9

1.1

10 20

820

25 50

515

550

120

75

W

C

°

C

°

C/W

Unit

V

nA

mΩ

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003

www.anpec.com.tw2

APM2307

Typical Characteristics

Output Characteristics

10

-VGS=5,6,7,8,9,10V

8

6

4

-ID-Drain Current (A)

2

0

0246810

-VGS=4V

-VGS=3V

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

-IDS=250uA

Transfer Characteristics

10

8

6

4

-ID-Drain Current (A)

2

0

012345

TJ=125°C

TJ=-55°C

TJ=25°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.30

0.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003

0.20

0.15

0.10

0.05

RDS(ON)-On-Resistance (Ω)

0.00
012345678

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

www.anpec.com.tw3