ANPEC APM2306AC-TR Datasheet

APM2306

N-Channel Enhancement Mode MOSFET

Features

• 30V/3.5A, R

R

••

•

Super High Dense Cell Design

••

••

•

High Power and Current Handling Capability

••

••

•

SOT-23 Package

••

=70mΩ(typ.) @ VGS=5V

DS(ON)

=42mΩ(typ.) @ VGS=10V

DS(ON)

Pin Description

Applications

• Switching Regulators

• Switching Converters

Ordering and Marking Information

APM 2306

Handling Code
Temp. Range
Package Code

Package Code
A : SO T -2 3
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TR : Tape & R eel

D

3

12

G

S

Top View of SOT-23

°

APM 2306 A : M06X

Absolute Maximum Ratings (T

X - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID

IDM

PD

TJ

T

STG

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise



customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.

Rev. A.2 - Aug., 2002

Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)
Maximum Drain Current – Pulsed 16

TA=25°C

Maximum Power Dissipation

T

=100°C

A

Maximum Junction Temperature
Storage Temperature Range -55 to 150

V

3.5
A

1.25 W

0.5 W

150

°C
°C

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APM2306

Electrical Characteristics

(TA= 25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

V

I

R

DS(ON)

V

DSS

GS(th)

GSS

Drain-Sour ce Br eak do wn

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Sour c e O n- state

Resistance
Diode Forward Volta ge ISD=1.25A, VGS=0V 1.1 1.5 V

SD

V

=0V, IDS=250µA

GS

=24V, VGS=0V 1

V

DS

V

DS=VGS

V

GS

, IDS=250µA

=±20V, VDS=0V

VGS=5V, IDS=2.8A 70 90

=10V, IDS=3.5A 42 65

V

GS

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C
C

C

Total Gate Charge 12.5 nC

g

Gate-Source Charge 3.7 nC

gs

Gate-Drain Charge

gd

V

=15V, VGS=5V,

DS

I

=3.5A

D

Turn-on Delay Time 10 ns

t

Turn-on Rise Time 8 ns

r

Turn-off Delay Time 19 ns

t

Turn-off Fall Time

f

iss

Input Capacitance 410 pF
Output Capacitance 80 pF

oss

rss

Reverse Transfer Capacitance

=15V,ID=1A,

V

DD

V

=10V, RG=6

GS

V

=0V

GS

=15V

V

DS

Ω

Frequency=1.0MHz

APM2306

Min. Typ. Max.

Unit

30 V

A

µ

11.5 V

±

100

nA

m

Ω

2.4 nC

6.2 ns

45 pF

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

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APM2306

Typical Characteristics

Output Characteristics

12

10

8

6

4

VGS=5,6,7,8,9,10V

VGS=4V

ID-Drain Current (A)

2

0

012345

VGS=3V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Temperature

2.25

µΑ

IDS=250

Transfer Characteristics

16

12

8

ID-Drain Current (A)

4

0

0123456

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

120

2.00

1.75

1.50

1.25

VGS(th)-Threshold Voltage (V)

1.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

100

80

60

40

20

VGS=5V

VGS=10V

RDS(on)-On-Resistance (mΩ)

0

0246810

ID - Drain Current (A)

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