ANPEC APM2305AC-TR Datasheet

APM2305

• -16V/-3.5A , R

R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

Applications

=60mΩ(typ.) @ VGS=-4.5V

DS(ON)

=70mΩ(typ.) @ VGS=-2.5V

DS(ON)

=83mΩ(typ.) @ VGS=-1.8V

DS(ON)

P-Channel Enhancement Mode MOSFET

Pin DescriptionFeatures

D

3

12

G

Top View of SOT-23

S

S

• Power Management in Notebook Computer ,

G

Portable Equipment and Battery Powered
Systems.

D

Ordering and Marking Information

APM2305

Handling Code
Temp. Range
Package Code

APM2305 A :

M05X X - Date Code

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -16
Gate-Source Voltage ±8
Maximum Drain Current – Continuous -3.5
Maximum Drain Current – Pulsed -12

Parameter Rating Unit

Package Code
A : SOT-23
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

(TA = 25°C unless otherwise noted)

P-Channel MOSFET

°

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

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APM2305

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdow n

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-1.25A , VGS=0V

SD

b

Total Ga te Charge

g

Gate-Source Char ge

gs

Gate-Drain Ch arge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

=-6.5V , VGS=0V -1

V

DS

V
V

, IDS=-250µA

DS=VGS

=±8V , VDS=0V

GS

VGS=-4.5V , IDS=-3.5A
VGS=-2.5V , IDS=-3A
V

=-1.8V , IDS=-2A

GS

V

=-5V , IDS=-1A

DS

V

=-4.5V

GS

=-10V , IDS=-1A ,

V

DD

V

=-4.5V , RG=6

GEN

V

=0V

GS

=-15V

V

DS

Ω

Frequency=1.0MH z

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2305

Min. Typ. Max.

-16 V

-0.5 -0.7 -1
100

±

60 70
70 85
83 105

-0.7 -1.3

12.7 15

1.75

2.8
12 21
25 42
52 85
18 32

1290

300
210

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

www.anpec.com.tw2

APM2305

Typical Characteristics

Output Characteristics

12

10

8

6

4

-VGS=2,3,4,5,6,7,8,9,10V

-VGS=1.5V

-ID-Drain Current (A)

2

-VGS=1V

0

012345

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

-IDS=250uA

Transfer Characteristics

12

10

8

6

4

TJ=125°C

-ID-Drain Current (A)

2

0

TJ=25°C

0.0 0.5 1.0 1.5 2.0 2.5

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.10

0.09

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

0.08

0.07

0.06

0.05

RDS(ON)-On-Resistance (Ω)

0.04
024681012

-VGS=2.5V

-VGS=4.5V

-ID - Drain Current (A)

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