ANPEC APM2300AAC-TR Datasheet

APM2300A

N-Channel Enhancement Mode MOSFET

Features

• 20V/6A , R

R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

=25mΩ(typ.) @ VGS=10V

DS(ON)

=32mΩ(typ.) @ VGS=4.5V

DS(ON)

=40mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

D

G

S

N-Channel MOSFET

APM2300A

Handling Code

Temp. Range

Package Code

APM 2300A A : A00X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 20

Gate-Source Voltage ±12

Maximum Drain Current – Continuous 6

Maximum Drain Current – Pulsed 20

Parameter Rating Unit

Package Code
A : SO T-23
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.4 - May., 2003

www.anpec.com.tw1

APM2300A

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown

DSS

Volta ge

Zero Gate Voltage Drain
Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=1.25A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time

Turn-on Rise Time

r

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C

T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=250µA

GS

V

=16V , VGS=0V 1

DS

V

V

VGS=10V , IDS=6A

VGS=4.5V , IDS=3A

V

V

V

V

V

V

V

Frequency=1.0MHz

, IDS=250µA

DS=VGS

=±12V , VDS=0V

GS

=2.5V , IDS=2A

GS

=10V , IDS= 6A

DS

=4.5V

GS

=10V , IDS=1A ,

DD

=4.5V , RG=0.2

GEN

=0V

GS

=15V

DS

Ω

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2300A

Min. Typ. Max.

20 V

0.5 0.7 1.0

100

±

25 30

32 40

40 55

0.7 1.3

10 12

3.6

2

814

612

19 45

723

550

120

80

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.4 - May., 2003

www.anpec.com.tw2

APM2300A

Typical Characteristics

Output Characteristics

20

15

10

5

ID-Drain Current (A)

0

012345678910

VGS=3,4.5,6,7,8V

VGS=2V

VGS=1.5V

VGS=1V

VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

IDS=250uA

Transfer Characteristics

20

15

10

ID-Drain Current (A)

5

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=25°C

TJ=125°C

TJ=-55°C

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.7

0.6

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - May., 2003

0.5

0.4

0.3

0.2

RDS(ON)-On-Resistance (Ω)

0.1

0.0
0246810

VGS=2.5V

VGS=4.5V

ID - Drain Current (A)

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