ANPEC APM2095PUC-TU, APM2095PUC-TR Datasheet

APM2095P

P-Channel Enhancement Mode MOSFET

Features

• -20V/-3.6A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• TO-252 Package

••

=70mΩ(typ.) @ VGS=-4.5V

DS(ON)

=100mΩ(typ.) @ VGS=-2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

G DS

Top View of TO-252

APM 2095P

Handling Code
Temp. Range
Package C ode

APM 2095P U :

APM 2095P
XXXXX

Absolute Maximum Ratings

Package Code
U : T O-25 2
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Ree l

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

V

Drain-Source Voltage -20

DSS

V

Gate-Source Voltage ±10

GSS

V

ID Maximum Drain Current – Continuous -3.6

IDM

Maximum Pulsed Drain Current (pulse width ≤ 300µs)

-20

A



ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003

www.anpec.com.tw1

APM2095P

q

Absolute Maximum Ratings Cont. (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD Maximum Power Dissipation

TC=25°C

50

W

T

=100°C

C

20

TJ Maximum J unc tion Temperature 150

°

°

C/W

C

Unit

T

Storage Temperature Range -55 to 150

STG

*

R

θ

JA

R

θ

JC

*

Mounted on 1in

Electrical Characteristics (T

Thermal Resistance – Junction to Ambient 50
Thermal Resistance – Junction to Case 2.5

2

pad area of PCB.

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

APM2095P

Min.

Typ. Max.

Static

BV

V

R

DS(ON)

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage I

SD

=0V , IDS=-250µA

V

GS

VDS=-16V , VGS=0V -1
V

DS=VGS

V

GS

, IDS=-250µA

=±10V , VDS=0V
VGS=-4.5V , IDS=-3.6A 70 95
V

=-2.5V , IDS=-2A 100 125

GS

=-1A , VGS=0V -0.7 -1.3 V

SD

-20 V

µA

-0.5 -0.7 -1 V
±100

nA

mΩ

Dynamicb

Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge

t

Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

t

Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

=-10V , IDS=-3.6A

V

DS

=-4.5V

V

GS

V

=-10V , IDS=-3.6A ,

DD

V

=-4.5V , RG=6Ω

GEN

=0V

V

GS

=-15V

V

DS

Fre

uency=1.0MHz

11 15
2

1.5
13 22
36 56
45 70
37 58
550
170
120

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003

www.anpec.com.tw2

APM2095P

Typical Characteristics

Output Characteristics

20

16

12

8

-ID-Drain Current (A)

4

0

0246810

-VGS=3,4,5,6,7 ,8V

-2V

-1.5V

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.8

1.6

1.4

1.2

1.0

0.8

(Normalized)

0.6

0.4

-VGS(th)-Threshold Voltage

0.2

0.0

-50 -25 0 25 50 75 100 125 150

IDS =250µA

Tj - Junction T emperature (°C)

Transfer Characteristics

20

16

12

8

-ID-Drain Current (A)

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=125oC

Tj=25oC

Tj=-55oC

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.16

0.14

0.12

0.10

0.08

0.06

DS(ON)-On-Resistance (Ω)

R

0.04

0.02
0246810

-VGS=2.5V

-VGS=4.5V

-ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003

www.anpec.com.tw3