ANPEC APM2070PUC-TUL, APM2070PUC-TU, APM2070PUC-TRL, APM2070PUC-TR Datasheet

APM2070P

P-Channel Enhancement Mode MOSFET

Features

• -20V/-5A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• TO-252 Package

••

=78mΩ(typ.) @ V

DS(ON)

=113mΩ(typ.) @ V

DS(ON)

=-10V

GS

GS

=-4.5V

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

GD S

Top View of TO-252

5

/

,,

P-Channel MOSFET

APM 2070P

Lead Free Code

Handling Code

Temp. Range

Package Code

APM 2070P U :

APM 2070P
XXXXX

Absolute Maximum Ratings

Package Code
U : T O -25 2
Operating Junction Temp. Range
C : -55 to 1 50° C
Handling Code
TU : Tu be TR : Tape & Re el
Lead Free Code
L : Lead Free Device Blan k : O rginal D evic e

XXXXX - Date Code

(T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

Drain-Source Voltage -20

DSS

V

Gate-Source Voltage ±16

GSS

*

I

Maximum Drain Current  Continuous -5

D

IDM Maximum Drain Current  Pulsed -20

V

A



ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

www.anpec.com.tw1

APM2070P

q

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD Maximum Power Dissipation

T

=25°C

A

=100°C

T

A

50

10

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

*

R

θJA

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

Thermal Resistance  Junction to Ambient 50

= 25°C unless otherwise noted)

A

APM2070P

Min.

Typ. Max.

Static

BV

V

R

DS(ON)

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

=0V , I

V

GS

V

=-16V , V

DS

V

DS=VGS

, I

DS

DS

=-250µA

GS

=-250µA

Gate Leakage Current VGS=±16V , VDS=0V

Drain-Source On-state

=

Resistance

=

Diode Forward Voltage IS=-0.5A , VGS=0V

SD

VGS=-10V , IDS=-5A

=-4.5V , IDS=-2.8A

V

GS

-20

=0V -1 µA

-0.7 -0.9 -1.5

±100

78 102

113 150

-0.7 -1.3

Dynamic>

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

t

Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

t

Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

=-10V , IDS=-5A

V

DS

V

=-4.5V

GS

V

=-10V , IDS=-5A ,

DD

V

=-4.5V , R

GEN

VGS=0V

V

=-15V

DS

Fre

uency=1.0MHz

=6Ω

G

17 22

4

5.2

13 25

36 67

45 83

37 69

504

147

118

W

°C
°C

°C/W

Unit

V

V

nA

mΩ

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

www.anpec.com.tw2

APM2070P

Typical Characteristics

Output Characteristics

20

16

12

8

-ID-Drain Current (A)

4

0

0246810



-VGS= 5,6,7,8,9,10V

-VGS=4V

-VGS=3V

-VGS=2V

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75



Transfer Characteristics

20

16

12



8

-ID-Drain Current (A)

4

0

012345



Tj=125oC

Tj=25oC



Tj=-55oC

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.150



1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

0.135

-VGS=4.5V

0.120

0.105





0.090

0.075

DS(ON)-On-Resistance (Ω)

R

0.060

0.045
0 4 8 12 16 20

-VGS=10V

-ID - Drain Current (A)

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