ANPEC APM2070PDC-TUL, APM2070PDC-TU, APM2070PDC-TRL, APM2070PDC-TR Datasheet

APM2070PD

P-Channel Enhancement Mode MOSFET

Features

• -20V/-3A , R

R

••

• Reliable and Rugged

••

••

• SOT-89 Package

••

=50mΩ(typ.) @ VGS=-4.5V

DS(ON)

=70mΩ(typ.) @ VGS=-2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

123

GDS

Top View of SOT-89

D

G

S

P-Channel MOSFET

APM 2070P

Lead Free Code
Handling Code

Temp. Range
Package Cod e

APM 2070P D :

APM 2070P
XXXXX

Absolute Maximum Ratings

Package Code
D : S O T-8 9
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e T R : T a pe & Reel
Lead Free Code
L : Lead Free Device Blank : Orginal Device

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

V

Drain-Source Voltage -20

DSS

V

Gate-Source Voltage ±12

GSS

V

ID Maximum Drain Current – Continuous -3

IDM

Maximum Pulsed Drain Current (Pulse width ≤ 300 µs)

-12

A



ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003

www.anpec.com.tw1

APM2070PD

q

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD Maximum Power Dissipation

TA=25°C

1.4
W

=100°C

T

A

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

R

θ

JA

Thermal Resistance – Junction to Ambient 85

0.5

°C
°C

°C/W

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM2070P

Min.

Typ. Max.

Unit

Static

BV

V

R

DS(ON)

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

=0V , IDS=-250µA

V

GS

V

=-16V , VGS=0V -1 µA

DS

V

DS=VGS

Gate Leakage Current VGS=±12V , VDS=0V

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage IS=-1A , VGS=0V

SD

VGS=-4.5V , IDS=-3A

=-2.5V , IDS=-1.5A

V

GS

, IDS=-250µA

-20

-0.6 -0.75 -1
±100

50 70
70 100

-0.7 -1.3

V

V

nA

mΩ

V

Dynamicb

Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge

t

Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

t

Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

=-10V , IDS=-3A

V

DS

V

=-4.5V

GS

V

=-10V , IDS=-3A ,

DD

V

=-4.5V , RG=6Ω

GEN

VGS=0V
V

=-15V

DS

Fre

uency=1.0MHz

17.4 23

2.7

3.8
12 21
25 42
52 85
18 32
1118
293
231

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003

www.anpec.com.tw2

APM2070PD

Typical Characteristics

Output Characteristics

12.0

10.5

9.0

7.5

6.0

4.5

3.0

-ID-Drain Current (A)

1.5

0.0
012345678910

-VGS=3,4,5,6,7,8,9,10V

-VGS=2V

-VGS=1.5V

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.8

1.6

1.4

1.2

1.0

0.8

(Normalized)

0.6

0.4

-VGS(th)-Threshold Voltage

0.2

0.0

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Transfer Characteristics

12.0

10.5

9.0

7.5

6.0

4.5

-ID-Drain Current (A)

3.0

1.5

0.0

Tj=125oC

Tj=25oC

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=-55oC

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.12

0.11

0.10

0.09

0.08

0.07

0.06

0.05

0.04

DS(ON)-On-Resistance (Ω)

R

0.03

0.02

0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0

-VGS=2.5V

-VGS=4.5V

-ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003

www.anpec.com.tw3