ANPEC APM2055NVC-TR, APM2055NUC-TR Datasheet
APM2055N
N-Channel Enhancement Mode MOSFET
Features
• 20V/12A, R
R
R
• Super High Dense Cell Design
••
•
High Power and Current Handling Capability
••
••
•
TO-252 and SOT-223 Packages
••
=55mΩ(typ.) @ VGS=10V
DS(ON)
=75mΩ(typ.) @ VGS=4.5V
DS(ON)
=140mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
123
GDS
Top View of T O-252
Applications
• Switching Regulators
• Switching Converters
Ordering and Marking Information
123
SDG
Top View of SOT-223
D
G
S
N-Channel MOSFET
APM 2055N
Handling Code
Temp. R ange
Package Code
APM 2055N U :
APM2055N V :
APM 2055N
XXXXX
APM 2055N
XXXXX
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
I
D
I
DM
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Drain-Source Voltage 20
Gate-So urce Voltage ±16
Maximum Drain Current – Continuous 12
Maximum Drain Current – Pulsed 20
Parameter Rating Unit
Package Code
U : T O-25 2 V : S O T -2 2 3
Operation Junction Temp. R ange
C : -55 to 150 C
Handling Code
TR : Tape & Reel
XXXXX
XXXXX
= 25°C unless otherwise noted)
A
°
- Da te C o d e
- Da te C o d e
V
A
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
www.anpec.com.tw1
APM2055N
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
Electrical Characteristics (T
Symbol Paramet er Test Condition
Static
BV
I
V
DSS
GS(th)
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Parameter Rating Unit
TO-252 50
TA=25°C
SOT-223 3
TO-252 10
T
=100°C
A
= 25°C unless otherwise noted)
A
=0V, ID=250µA
V
GS
=16V, VGS=0V
V
DS
V
DS=VGS
, ID=250µA
SOT-223 1.2
= 25°C unless otherwise noted)
A
APM2055N
Min. Typ. Max.
20 V
1
0.7 0.9 1.5 V
W
°
°
C/W
°
C
C
Unit
A
µ
R
I
GSS
DS(ON)
Gate Leakage Current
Drain-Source On-state
Resistance
V
Diode For w ar d Voltage IS=2A, VGS=0V
SD
Dynamic
Q
Q
Q
t
d(ON)
t
d(OFF)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
Total Gate Char g e
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time 9.2 18.6
t
Turn-on Rise Time
r
Turn-off Delay Time
t
Turn-off Fall Time
f
=±16V, VDS=0V
V
GS
VGS=10V, ID=12A
55 70
±
100
VGS=4.5V, ID=6A 75 90
=2.5V, ID=2A
V
GS
140 160
0.7 1.3 V
=15V, VGS=4.5V,
V
DS
=1.5A
I
D
78.5
2.5
1.5
V
=15V, ID=2A,
DD
=10V, RG=6
V
GS
Ω
14 27
31 58
16 21
www.anpec.com.tw2
nA
m
nC
ns
Ω
APM2055N
Typical Characteristics
Output Characteristics
20
16
12
8
ID-Drain Current (A)
4
0
012345
VGS=4,5,6,7,8,9,10V
VGS=3V
VGS=2V
VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.25
IDS=250uA
Transfer Characteristics
20
16
12
8
ID-Drain Current (A)
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.125
0.100
TJ=125°C
TJ=25°C
TJ=-55°C
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold V oltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
VGS=4.5V
0.075
0.050
0.025
RDS(ON)-On-Resistance (Ω)
0.000
0 2 4 6 8 10 12 14 16 18 20
VGS=10V
ID - Drain Current (A)
www.anpec.com.tw3
Loading...