Anpec APM2054NV Schematics
APM2054NV
N-Channel Enhancement Mode MOSFET
Features
• 20V/5A,
R
= 35mΩ (Typ.) @ VGS= 10V
DS(ON)
R
= 45mΩ (Typ.) @ VGS= 4.5V
DS(ON)
R
= 110mΩ (Typ.) @ VGS= 2.5V
DS(ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switching Regulators
• Switching Converters
Pin Description
G
D
S
Top View of SOT-223
(2)
D
(1)
G
S
(3)
N-Channel MOSFET
Ordering and Marking Information
APM2054N
Assembly Material
Handling Code
Temperature Range
Package Code
APM2054N V :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL c lassification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
APM2054N
XXXXX
Package Code
V : SOT-223
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
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APM2054NV
Absolute Maximum Ratings (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
DSS
V
GSS
I
*
D
I
DM
I
* Diode Continuous Forward Current
S
TJ
T
STG
P
D
R
θJA
Note : *Surface Mounted on 1in
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
*
Pulsed Drain Current
Maximum Junction Temperature
Storage Temperature Range -55 to 150
*
Power Dissipation for Single Operation
*
Thermal Resistance-Junction to Ambient
2
pad area, t ≤ 10sec.
Electrical Characteristics (T
VGS=10V
TA=25°C 1.47
TA=100°C
= 25°C unless otherwise noted)
A
20
±16
5
20
3
150
0.58
85
APM2054NV
Symbol
Parameter Test Conditions
Min. Typ. Max.
V
A
A
°C
W
°C/W
Unit
STATIC CHARACTERISTICS
BV
Drain-Source Breakdown Voltage
DSS
VGS=0V, IDS=250µA
20 - - V
VDS=16V, VGS=0V - - 1
I
Zero Gate Voltage Drain Current
DSS
V
Gate Threshold Voltage
GS(th)
I
Gate Leakage Current VGS=±16V, VDS=0V - - ±100 nA
GSS
VDS=VGS, IDS=250µA
TJ=85°C - - 30
0.6 0.9 1.5 V
VGS=10V, IDS=5A - 35 40
DS(ON)
a
Drain-Source On-state Resistance
VGS=4.5V, IDS=3.5A - 45 54
R
VGS=2.5V, IDS=2.5A - 110 130
a
V
Diode Forward Voltage ISD=3A, VGS=0V - 0.85 1.3 V
SD
GATE CHARGE CHARACTERISTICS b
Qg Total Gate Charge - 11 13
Qgs Gate-Source Charge - 3.8 -
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=6A
- 5.2 -
µA
mΩ
nC
Copyright ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
www.anpec.com.tw2
APM2054NV
Electrical Characteristics (Cont.) (T
Symbol
Parameter Test Conditions
= 25°C unless otherwise noted)
A
DYNAMIC CHARACTERISTICS b
t
Turn-On Delay Time - 7 10
d(ON)
Tr
t
d(OFF)
Tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=10V, R
IDS=1A, V
RG=6Ω
GEN
=10Ω,
L
=4.5V,
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz
C
Input Capacitance - 450
iss
C
Output Capacitance - 100
oss
C
Reverse Transfer Capacitance
rss
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
VGS=0V,
VDS=20V,
Frequency=1.0MHz
APM2054NV
Min. Typ. Max.
- 15 25
- 19 26
- 6 7
- 2.5 -
-
-
- 60 -
Unit
ns
Ω
pF
Copyright ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
www.anpec.com.tw3
APM2054NV
Typical Operating Characteristics
Power Dissipation
1.6
1.4
1.2
1.0
0.8
Ptot - Power (W)
0.6
0.4
0.2
TA=25oC
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
100
Drain Current
6
5
4
3
2
ID - Drain Current (A)
1
TA=25oC,VG=10V
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
1
Duty = 0.5
10
Rds(on) Limit
1
ID - Drain Current (A)
0.1
TA=25oC
0.01
0.1 1 10 60
VDS - Drain - Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
300µs
1ms
10ms
100ms
1s
DC
0.2
0.1
0.01
0.01
Normalized Transient Thermal Resistance
1E-3
1E-4 1E-3 0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
0.1
0.05
0.02
Single Pulse
Mounted on 1in2 pad
R
:85 oC/W
θJA
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