Anpec APM2054NV Schematics

APM2054NV

N-Channel Enhancement Mode MOSFET

Features

• 20V/5A,
R

= 35mΩ (Typ.) @ VGS= 10V

DS(ON)

R

= 45mΩ (Typ.) @ VGS= 4.5V

DS(ON)

R

= 110mΩ (Typ.) @ VGS= 2.5V

DS(ON)

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• Switching Regulators

• Switching Converters

Pin Description

G

D

S

Top View of SOT-223

(2)

D

(1)

G

S

(3)

N-Channel MOSFET

Ordering and Marking Information

APM2054N

Assembly Material
Handling Code

Temperature Range
Package Code

APM2054N V :

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina­tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL c lassification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

APM2054N
XXXXX

Package Code
V : SOT-223
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device

XXXXX - Date Code

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APM2054NV

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

*

D

I

DM

I

* Diode Continuous Forward Current

S

TJ

T

STG

P

D

R

θJA

Note : *Surface Mounted on 1in

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current

*

Pulsed Drain Current

Maximum Junction Temperature
Storage Temperature Range -55 to 150

*

Power Dissipation for Single Operation

*

Thermal Resistance-Junction to Ambient

2

pad area, t ≤ 10sec.

Electrical Characteristics (T

VGS=10V

TA=25°C 1.47
TA=100°C

= 25°C unless otherwise noted)

A

20

±16

5

20

3

150

0.58
85

APM2054NV

Symbol

Parameter Test Conditions

Min. Typ. Max.

V

A

A

°C

W

°C/W

Unit

STATIC CHARACTERISTICS

BV

Drain-Source Breakdown Voltage

DSS

VGS=0V, IDS=250µA

20 - - V

VDS=16V, VGS=0V - - 1

I

Zero Gate Voltage Drain Current

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current VGS=±16V, VDS=0V - - ±100 nA

GSS

VDS=VGS, IDS=250µA

TJ=85°C - - 30

0.6 0.9 1.5 V

VGS=10V, IDS=5A - 35 40

DS(ON)

a

Drain-Source On-state Resistance

VGS=4.5V, IDS=3.5A - 45 54

R

VGS=2.5V, IDS=2.5A - 110 130

a

V

Diode Forward Voltage ISD=3A, VGS=0V - 0.85 1.3 V

SD

GATE CHARGE CHARACTERISTICS b

Qg Total Gate Charge - 11 13

Qgs Gate-Source Charge - 3.8 -

Qgd Gate-Drain Charge

VDS=10V, VGS=4.5V,
IDS=6A

- 5.2 -

µA

mΩ

nC

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

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APM2054NV

Electrical Characteristics (Cont.) (T

Symbol

Parameter Test Conditions

= 25°C unless otherwise noted)

A

DYNAMIC CHARACTERISTICS b

t

Turn-On Delay Time - 7 10

d(ON)

Tr

t

d(OFF)

Tf

Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

VDD=10V, R
IDS=1A, V
RG=6Ω

GEN

=10Ω,

L

=4.5V,

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz

C

Input Capacitance - 450

iss

C

Output Capacitance - 100

oss

C

Reverse Transfer Capacitance

rss

Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.

VGS=0V,
VDS=20V,
Frequency=1.0MHz

APM2054NV

Min. Typ. Max.

- 15 25

- 19 26

- 6 7

- 2.5 -

-

-

- 60 -

Unit

ns

Ω

pF

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

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APM2054NV

Typical Operating Characteristics

Power Dissipation

1.6

1.4

1.2

1.0

0.8

Ptot - Power (W)

0.6

0.4

0.2
TA=25oC

0.0

0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

Safe Operation Area

100

Drain Current

6

5

4

3

2

ID - Drain Current (A)

1

TA=25oC,VG=10V

0

0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

Thermal Transient Impedance

2
1

Duty = 0.5

10

Rds(on) Limit

1

ID - Drain Current (A)

0.1

TA=25oC

0.01

0.1 1 10 60

VDS - Drain - Source Voltage (V)

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

300µs

1ms
10ms

100ms

1s

DC

0.2

0.1

0.01

0.01

Normalized Transient Thermal Resistance

1E-3

1E-4 1E-3 0.01 0.1 1 10 100

Square Wave Pulse Duration (sec)

0.1

0.05

0.02

Single Pulse

Mounted on 1in2 pad
R

:85 oC/W

θJA

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APM2054NV

Typical Operating Characteristics ( Cont.)

Output Characteristics

20
18
16
14
12
10

8
6

VGS= 4, 5, 6, 7, 8, 9, 10V

3V

ID - Drain Current (A)

4
2
0

0 2 4 6 8 10

2V

VDS - Drain - Source Voltage (V)

Transfer Characteristics

20
18
16
14
12

Drain-Source On Resistance

160

140

VGS=2.5V

120

100

80

60

40

RDS(ON) - On - Resistance (mΩ)

20

0

0 4 8 12 16 20

VGS=4.5V

VGS=10V

ID - Drain Current (A)

Gate Threshold Voltage

1.6

1.4

1.2

1.0

IDS =250µA

10

8

ID - Drain Current (A)

6
4
2
0

0 1 2 3 4 5

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

Tj=125oC

Tj=25oC

VGS - Gate - Source Voltage (V)

Tj=-55oC

0.8

0.6

0.4

Normalized Threshold Voltage

0.2

0.0

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

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APM2054NV

Typical Operating Characteristics ( Cont.)

Drain-Source On Resistance

2.4
VGS = 10V

2.2
IDS = 5A

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

Normalized On Resistance

0.4

0.2

0.0

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

700

600

RON@Tj=25oC: 35mΩ

Capacitance Gate Charge

Frequency=1MHz

Source-Drain Diode Forward

20

10

Tj=150oC

Tj=25oC

IS - Source Current (A)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD - Source - Drain Voltage (V)

10

VDS=10V

9

ID = 5A

8

500

400

300

200

C - Capacitance (pF)

Coss

100

Crss

0

0 4 8 12 16 20

VDS - Drain - Source Voltage (V)

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

Ciss

7
6
5
4
3
2

VGS - Gate-source Voltage (V)

1
0

0 4 8 12 16 20 24

QG - Gate Charge (nC)

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APM2054NV

Package Information

SOT-223

D

b2

SEE

VIEW A

E1

E

e

e1

A

A2

b

S

Y
M
B
O
L

A
A1

A2
b
b2
c

D
E
E1
e
e1
L

0

Note : 1. Follow from JEDEC TO-261 AA.

2. Dimension D and E1 are determined at the outermost extremes
of the plastic exclusive of mold flash, tie bar burrs, gate burrs,
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.

A1

SOT-223

MILLIMETERS

MIN. MAX.

1.80

0.02

1.50 1.70

0.66 0.84

2.90 3.10

0.23 0.33

6.30 6.70

6.70

3.30 3.70

2.30 BSC

4.60 BSC 0.181 BSC

0.75
0

0.10

7.30

10

MIN. MAX.

0.001

0.059 0.067

0.026 0.033

0.114 0.122

0.009 0.013

0.248 0.264

0.264

0.130 0.146

0.030

c

L

VIEW A

INCHES

0.091 BSC

0

0

0.071

0.004

0.287

10

GAUGE PLANE

SEATING PLANE

°

0.25

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

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APM2054NV

Carrier Tape & Reel Dimensions

P0

OD0

B0

P2

P1

A

E1

F

W

Application

SOT-223

K0

SECTION A-A

T1

B

A

H

A0

SECTION B-B

OD1

B

T

A

d

A H T1 C d D W E1 F

320.0±2.00

50 MIN.

12.4+2.00

-0.00

13.0+0.50

-0.20

1.5 MIN. 20.2 MIN.

12.00±0.30 1.75±0.10 5.50±0.05

P0 P1 P2 D0 D1 T A0 B0 K0

4.00±0.10 8.00±0.10 2.00±0.50

1.5+0.10

-0.00

1.5 MIN.

0.6+0.00

-0.40

6.90±0.20 7.50±0.20 2.10±0.20

(mm)

Devices Per Unit

Package Type Unit Quantity

SOT-223

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

Tape & Reel 2500

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APM2054NV

Taping Direction Information

SOT-223

USER DIRECTION OF FEED

Reflow Condition (IR/Convection or VPR Reflow)

T

P

Ramp-up

T

L

Tsmax

Tsmin

Temperature

ts

Preheat

25

°

t 25 C to Peak

Reliability Test Program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003
HOLT MIL-STD-883D-1005.7
PCT JESD-22-B, A102
TST MIL-STD-883D-1011.9

tp

Ramp-down

Time

t

L

245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C

-65°C~150°C, 200 Cycles

Critical Zone

TL to T

P

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

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APM2054NV

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate
(TL to TP)
Preheat

- Temperature Min (Tsmin)

- Temperature Max (Tsmax)

- Time (min to max) (ts)

Time maintained above:

- Temperature (TL)

- Time (tL)

Peak/Classification Temperature (Tp)
Time within 5°C of actual

Peak Temperature (tp)
Ramp-down Rate

Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures

Package Thickness Volume mm

<2.5 mm
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

Package Thickness Volume mm3

<350

<1.6 mm

1.6 mm – 2.5 mm
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*

*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated

classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.

260 +0°C* 260 +0°C* 260 +0°C*
260 +0°C* 250 +0°C* 245 +0°C*

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

See table 1 See table 2

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

3

<350

240 +0/-5°C 225 +0/-5°C

Volume mm3

350-2000

150°C
200°C

60-180 seconds

217°C

60-150 seconds

Volume mm

≥350

Volume mm3

3

>2000

Customer Service

Anpec Electronics Corp.

Head Office :

No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : [phone]
Fax : [phone]

Taipei Branch :

2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : [phone]
Fax : [phone]

Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008

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