Anpec APM2054ND, APM2054NU Schematics

APM2054N

N-Channel Enhancement Mode MOSFET

Features

• 20V/12A, R

R
R

••

•

Super High Dense Cell Design

••

••

•

High Power and Current Handling Capability

••

••

•

TO-252, SOT-89 and SOT-223 Packages

••

=35mΩ(typ.) @ VGS=10V

DS(ON)

=45mΩ(typ.) @ VGS=4.5V

DS(ON)

=110mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Top View of TO-252

Applications

• Switching Regulators

• Switching Converters

Top View of SOT-223

Ordering and Marking Information

APM2054N

AP M 2054N D /V :

APM2054N
XXXXX

Lead Free Code
Handling Code
Tem p R ange
Package C ode

Package C ode

Package C ode

D : S O T-89 V : SO T-223 U : TO-252

Operation Junction Tem p. Range

C : -55 to 150 C

Handling Code

TR : Tape & Reel
Lead Feed C ode
L : Lead Free D evice B lank : Original Device

XXXXX - Date Code

123

GDS

123

SDG

°

°

123

GDS

Top View of SOT-89

D

G

S

N-Channel MOSFET

AP M 2054N U :

APM2054N
XXXXX

Absolute Maximum Ratings (T

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID*

IDM

PD*

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

Drain-Source Voltage 20
Gate-Source Voltage ±16
Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

Maximum Power Dissipation

T

=25°C TO-252 5 W

A

TO-252

SOT-223/SO T-89

TO-252 25

SOT-223/SO T-89

V

10

4

A

12

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APM2054N

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

TA=25°C SOT-223/SOT-89 1.25

PD*

TJ

T

STG

Maximum Power Dissipation

T

=100°C

A



TO-252

SOT-223/SOT-89 0.5

Maximum Junction Temperature
Storage Temperature Range -55 to 150 °C

2

150 °C

W

* Surface Mounted on FR4 Board, t ≤ 10 sec.



Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

APM2054N

Min. Typ. Max.

Unit

Static

BV

Drain-Source Breakdown Voltage

DSS

I

Zero G ate Voltage Drain Current VDS=16V, VGS=0V 1

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current

GSS

V

=0V, IDS=250µA

GS

V

DS=VGS

V

GS

, IDS=250µA

=±16V, VDS=0V

20 V

µA

0.7 0.9 1.5 V
±100

nA

VGS=10V, IDS=12A 35 40

R

Drain-Source O n-state Resistance

DS(ON)

VGS=4.5V, IDS=6A 45 54
V

=2.5V, IDS=2A 110 130

GS

mΩ

VSD Diode Forward Voltage ISD=6A, VGS=0V 0.7 1.3 V

Dynamic

Qg Total Gate Charge 11 13

V

=10V, VGS=4.5V,

Qgs Gate-Source Charge 3.8
Qgd Gate-Drain Charge

t

Turn-on Delay Time 12 24

d(ON)

tr Turn-on Rise Tim e 10 20

t

Turn-off Delay Tim e 40 74

d(OFF)

tf Tu rn-o ff F a ll Tim e

C

Input Capacitance 450

iss

C

Output Capacitance 100

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

DS

I

=6A

DS

=10V, IDS=1A,

V

DD

=4.5V, RG=6Ω

V

GEN

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

5.2

20 38

60

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nC

ns

pF

APM2054N

Typical Characteristics

Output Characteristics

12

9

6

ID-Drain Current (A)

3

0

0246810

VGS= 4, 5, 6, 7, 8, 9, 10V

VGS=3V

VGS=2V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Temperature

1.50

1.25

IDS=250uA

Transfer Characteristics

12

9

6

ID-Drain Current (A)

3

0

012345

Tj=25oC

Tj=125oC

Tj=-55oC

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.07

0.06

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

0.05

0.04

0.03

RDS(ON)-On-Resistance (Ω)

0.02

0.01
0246810

VGS=10V

VGS=4.5V

ID - Drain Current (A)

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APM2054N

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.10

0.08

0.06

0.04

0.02

RDS(ON)-On-Resistance (Ω)

0.00
0246810

ID= 6A

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Junction T emperature

0.07

VGS=10V
ID=12A

0.06

0.05

On-Resistance vs. Junction T emperature

2.00

VGS=10V
ID=12A

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Gate Charge

10

VDS=10V
ID=6A

8

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

6

4

2

VGS-Gate-Source Voltage (V)

0

0 5 10 15 20 25

QG -Total Gate Charge (nC)

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APM2054N

Typical Characteristics

Capacitance

750

625

500

375

250

Capacitance (pF)

125

0

0 5 10 15 20

VDS - Drain-to-Source Voltage (V)

Single Pulse Power

150

Frequency=1MHz

Ciss

Coss

Crss

TO-252

Source-Drain Diode Forward V oltage

12

10

TJ=150°C TJ=25°C

IS-Source Current (A)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD -Source-to-Drain V oltage (V)

Single Pulse Power

350

SOT-223/89

120

90

60

Power (W)

30

0

1E-4 1E-3 0.01 0.1 1 10 100

Time (sec)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

300

280

210

140

Power (W)

70

0

1E-4 1E-3 0.01 0.1 1 10 100

300

Time (sec)

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