ANPEC APM2023NUC-TR Datasheet
APM2023N
N-Channel Enhancement Mode MOSFET
Features
• 20V/12.8A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
TO-252 Package
••
=20mΩ(typ.) @ VGS=4.5V
DS(ON)
=29mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM2023 N
Handling Code
Temp. Range
Package Code
Package Code
U : T O -252
Operation Junction Temp. Range
C :-55 to 150 C
Handling Code
TR : Tape & Reel
123
GDS
Top View of TO-252
D
G
S
N-Channel MOSFET
°
APM2023N U :
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
APM2023N
XXXXX
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Parameter Rating Unit
Drain-Source Voltage 20
Gate-Source Voltage ±12
Maximum Drain Current – Continuous 12.8
Maximum Drain Current – Pulsed 50
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
www.anpec.com.tw1
APM2023N
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Notes
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=1.7A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Parameter Rating Unit
TA=25°C
=100°C
T
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=250µA
GS
V
=16V , VGS=0V 1
DS
V
V
, IDS=250µA
DS=VGS
=±12V , VDS=0V
GS
VGS=4.5V , IDS=12.8A
V
=2.5V , IDS=6.6A
GS
VDS=10V , IDS= 6A
V
=4.5V ,
GS
=10V , IDS=1A ,
V
DD
V
=4.5V , RG=0.2
GEN
V
=0V
GS
V
=15V
DS
Ω
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
50
10
APM2023N
Min. Typ. Max.
18 V
0.5 0.7 1
100
±
20 23
29 35
0.8 1.1
15 18
5.4
3
25 47
21 42
65 120
35 65
780
165
105
W
°
°
C/W
°
C
C
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
www.anpec.com.tw2
APM2023N
Typical Characteristics
Output Characteristics
50
45
40
35
30
25
20
15
ID-Drain Current (A)
10
5
0
012345678910
VGS=3,4,5,6,7,8,9,10V
VGS=2V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
1.25
1.00
Transfer Characteristics
30
25
20
15
TJ=125°C
10
ID-Drain Current (A)
TJ=25°C
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.050
0.045
0.040
0.035
VGS=2.5V
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
0.030
0.025
0.020
VGS=4.5V
RDS(ON)-On-Resistance (Ω)
0.015
0.010
0 5 10 15 20 25 30
ID - Drain Current (A)
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