ANPEC APM2014NUC-TR Datasheet

APM2014N

N-Channel Enhancement Mode MOSFET

Features

• 20V/30A , R

R

••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

•

Reliable and Rugged

••

••

•

TO-252 Package

••

=12mΩ(typ.) @ VGS=4.5V

DS(ON)

=18mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Applications

• Power Management in Computer, Portable

Equipment and Battery Powered Systems.

Ordering and Marking Information

APM2014 N

Handling Code
Temp. Range
Package Code

Package Code
U : T O -252
Operation Junction Temp. Range
C :-55 to 150 C
Handling Code
TR : Tape & Reel

123

G DS

T op View of T O-252

°

APM2014N U :

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM2014N
XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Parameter Rating Unit

Drain-Source Voltage 20
Gate-Source Voltage ±16

V

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APM2014N

Absolute Maximum Ratings (Cont.) (T

Symbol

*

I

D

I

DM

P

D

T

J

T

STG

R

jA

θ

Maximum Drain Current – Continuous 30
Maximum Drain Current – Pulsed 50

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Notes

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=4A , VGS=0V

SD

b

Total Gate Ch a rg e

g

Gate-Source Charge

gs

Gate-D rain C harge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

=0V , IDS=250µA

V

GS

V

=18V , VGS=0V 1

DS

V
V

, IDS=250µA

DS=VGS

=±16V , VDS=0V

GS

VGS=4.5V , IDS=10A

=2.5V , IDS=5A

V

GS

=10V , IDS= 5A

V

DS

V

=4.5V ,

GS

V

=10 V , IDS=1A ,

DD

V

=4.5V , RG=0.2

GEN

=0V

V

GS

V

=15V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

A

50

W

10

C

°

C

°

C/W

°

APM2014N

Min. Typ. Max.

20 V

0.6 1.5
100

±

12 14
18 22

0.6 1.3

18.2 24

5.6

4.8
10 20
15 22
28 42
17 25

1210

300
210

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

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APM2014N

Typical Characteristics

Output Characteristics

30

VGS=4,5,6,7,8,9,10V

25

20

15

10

ID-Drain Current (A)

5

0

012345678

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

3V

2.5V

2V

IDS=250uA

Transfer Characteristics

30

25

20

15

10

ID-Drain Current (A)

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.030

0.025

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

0.020

0.015

0.010

0.005

RDS(ON)-On-Resistance (Ω)

0.000
0 5 10 15 20

VGS=2.5V

VGS=4.5V

ID - Drain Current (A)

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