ANPEC APM2007NUC-TR Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM2007

Pin Description

Ordering and Marking Information

Features

Applications

• 20V/30A , R

DS(ON)

=6mΩ(typ.) @ VGS=10V

R

DS(ON)

=8mΩ(typ.) @ VGS=4.5V

R

DS(ON)

=16mΩ(typ.) @ VGS=2.5V

••

••

•

Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

•

Reliable and Rugged

••

••

• TO-252 Package

• Power Management in Computer, Portable

Equipment and Battery Powered Systems.

T op View of T O-252

GDS

123

APM2007N

Handling Code
Temp. Range
Package Code

Package Code
U : TO- 25 2
Operation Junction Temp . Range
C :-55 to 15 0 C
Handling Code
TR : Tape & Reel

°

APM2 007N U :

XXXXX - Date Code

APM2 007N
XXXXX

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 20

V

GSS

Gate-Source Voltage ±16

V

N-Channel MOSFET

G

S

D

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002

www.anpec.com.tw2

APM2007

Symbol

Parameter Rating Unit

I

D

*

Maximum Drain Current – Continuous 30

I

DM

Maximum Drain Current – Pulsed 70

A

TA=25°C

50

P

D

Maximum Power Dissipation

T

A

=100°C

10

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 50

°

C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

APM2007N

Symbol Parameter Test Condition

Min. T

y

p. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

VGS=0V , IDS=250µA

20 V

I

DSS

Zero Gate Voltage Drain
Curren t

V

DS

=18 V , VGS=0V 1

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

11.52

V

I

GSS

Gate Leakage Current

V

GS

=±16V , VDS=0V

±

100

nA

VGS=10 V , IDS=30A

67.5

VGS=4.5V , IDS=20A

89.5

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=2.5V , IDS=15A

16 18

m

Ω

V

SD

a

Diode Forward Voltage ISD=4A , VGS=0V

0.7 1.3

V

Dynamic

b

Q

g

Total Gate Charge

28 35

Q

gs

Gate-Source Charge

5.2

Q

gd

Gate-Drain Cha rg e

VDS=10 V , IDS= 5A
V

GS

=4.5V ,

7.6

nC

t

d(ON)

Turn-on Delay Time

17 32

T

r

Turn-on Rise Time

15 29

t

d(OFF)

Turn-off Dela y Tim e

45 56

T

f

Turn-off Fall Time

VDD=10V , IDS=1A ,
V

GEN

=4.5V , RG=0.2

Ω

25 32

ns

C

iss

Input Capacitance

2293

C

oss

Output Capacitance

570

C

rss

Reverse Transfer Capacitance

VGS=0V
VDS=15V
Frequency=1.0MHz

390

pF

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings (Cont.) (T

A

= 25°C unless otherwise noted)

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002

www.anpec.com.tw3

APM2007

0 10203040506070

0

2

4

6

8

10

12

14

16

0246810

0

5

10

15

20

25

30

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

25

30

Typical Characteristics

VGS=2V

ID-Drain Current (A)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

Tj - Junction T emperature (°C)

VGS(th)-Threshold Voltage (V)

(Normalized)

IDS=250uA

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Drain Current

ID - Drain Current (A)

VGS=10V

Output Characteristics

ID-Drain Current (A)

VGS=3,4,5,6,7,8,9,10V

VDS - Drain-to-Source V oltage (V)

VGS=4.5V