Analog Devices REF192GP, REF192GRU, REF192GS, REF193ES, REF193FS Datasheet
...
Table I
Part Number Nominal Output Voltage (V)
REF191 2.048
REF192 2.50
REF193 3.00
REF194 4.50
REF195 5.00
REF196 3.30
REF198 4.096
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
1
REF19xGP –40°C to +85°C 8-Lead Plastic DIP
2
N-8
REF19xES
3
–40°C to +85°C 8-Lead SOIC SO-8
REF19xFS
3
–40°C to +85°C 8-Lead SOIC SO-8
REF19xGS –40°C to +85°C 8-Lead SOIC SO-8
REF19xGRU –40°C to +85°C 8-Lead TSSOP RU-8
REF19xGBC +25°C DICE
NOTES
1
N = Plastic DIP, SO = Small Outline, RU = Thin Shrink Small Outline.
2
8-Lead plastic DIP only available in “G” grade.
3
REF193 and REF196 are available in “G” grade only.
PIN CONFIGURATIONS
a
Precision Micropower, Low Dropout,
Voltage References
REF19x Series
8-Lead Narrow-Body SO and TSSOP
(S Suffix and RU Suffix)
TP
V
S
SLEEP
GND
NC
NC
OUTPUT
TP
1
2
3
4
8
7
6
5
REF19x
SERIES
TOP VIEW
(Not to Scale)
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
8-Lead Epoxy DIP (P Suffix)
TP
V
S
SLEEP
GND
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS
NO USER CONNECTION
NC
NC
OUTPUT
TP
1
2
3
4
8
7
6
5
REF19x
SERIES
TOP VIEW
(Not to Scale)
FEATURES
Initial Accuracy: ⴞ2 mV max
Temperature Coefficient: 5 ppm/°C max
Low Supply Current: 45 A max
Sleep Mode: 15 A max
Low Dropout Voltage
Load Regulation: 4 ppm/mA
Line Regulation: 4 ppm/V
High Output Current: 30 mA
Short Circuit Protection
APPLICATIONS
Portable Instrumentation
A-to-D and D-to-A Converters
Smart Sensors
Solar Powered Applications
Loop Current Powered Instrumentations
GENERAL DESCRIPTION
REF19x series precision bandgap voltage references use a patented temperature drift curvature correction circuit and laser
trimming of highly stable thin film resistors to achieve a very low
temperature coefficient and a high initial accuracy.
The REF19x series are micropower, Low Dropout Voltage
(LDV) devices providing a stable output voltage from supplies
as low as 100 mV above the output voltage and consuming less
than 45 µA of supply current. In sleep mode, which is enabled
by applying a low TTL or CMOS level to the sleep pin, the
output is turned off and supply current is further reduced to less
than 15 µA.
The REF19x series references are specified over the extended
industrial temperature range (–40°C to +85°C) with typical
performance specifications over –40°C to +125°C for applica-
tions such as automotive.
All electrical grades are available in 8-Lead SOIC; the PDIP and
TSSOP are only available in the lowest electrical grade. Products are also available in die form.
Test Pins (TP)
The test pins, Pin 1 and Pin 5, are reserved for in-package
zener-zap. To achieve the highest level of accuracy at the output, the zener-zapping technique is used to trim the output
voltage. Since each unit may require a different amount of adjustment, the resistance value at the test pins will vary widely
from pin-to-pin as well as from part-to-part. The user should
not make any physical nor electrical connections to Pin 1 and
Pin 5.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1999
REF19x Series
–2–
REV. D
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
INITIAL ACCURACY
1
“E” Grade V
O
I
OUT
= 0 mA 2.046 2.048 2.050 V
“F” Grade 2.043 2.053 V
“G” Grade 2.038 2.058 V
LINE REGULATION
2
“E” Grade ∆VO/∆V
IN
3.0 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 2 4 ppm/V
“F & G” Grades 4 8 ppm/V
LOAD REGULATION
2
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 30 mA 4 10 ppm/mA
“F & G” Grades 6 15 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.15 V, I
LOAD
= 2 mA 0.95 V
V
S
= 3.3 V, I
LOAD
= 10 mA 1.25 V
VS = 3.6 V, I
LOAD
= 30 mA 1.55 V
LONG-TERM STABILITY
3
∆V
O
1000 Hours @ +125°C1.2mV
NOISE VOLTAGE e
N
0.1 Hz to 10 Hz 20 µV p-p
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
TEMPERATURE COEFFICIENT
1, 2
“E” Grade TCV
O
/°CI
OUT
= 0 mA 2 5 ppm/°C
“F” Grade 5 10 ppm/°C
“G” Grade
3
10 25 ppm/°C
LINE REGULATION
4
“E” Grade ∆VO/∆V
IN
3.0 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 5 10 ppm/V
“F & G” Grades 10 20 ppm/V
LOAD REGULATION
4
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 25 mA 5 15 ppm/mA
“F & G” Grades 10 20 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.15 V, I
LOAD
= 2 mA 0.95 V
V
S
= 3.3 V, I
LOAD
= 10 mA 1.25 V
VS = 3.6 V, I
LOAD
= 25 mA 1.55 V
SLEEP PIN
Logic High Input Voltage V
H
2.4 V
Logic High Input Current I
H
–8 µA
Logic Low Input Voltage V
L
0.8 V
Logic Low Input Current I
L
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (T
MAX–TMIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
(@ VS = 3.3 V, TA = +25ⴗC unless otherwise noted)
(@ V
S
= 3.3 V, –40ⴗC ≤ TA ≤ +85ⴗC unless otherwise noted)
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
TEMPERATURE COEFFICIENT
1, 2
“E” Grade TCV
O
/°CI
OUT
= 0 mA 2 ppm/°C
“F” Grade 5 ppm/°C
“G” Grade
3
10 ppm/°C
LINE REGULATION
4
“E” Grade ∆VO/∆V
IN
3.0 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 10 ppm/V
“F & G” Grades 20 ppm/V
LOAD REGULATION
4
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 20 mA 10 ppm/mA
“F & G” Grades 20 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.3 V, I
LOAD
= 10 mA 1.25 V
VS = 3.6 V, I
LOAD
= 20 mA 1.55 V
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (T
MAX–TMIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REF19x Series
REV. D
–3–
(@ V
S
= 3.3 V, –40ⴗC ≤ TA ≤ +125ⴗC unless otherwise noted)
REF19x Series
–4–
REV. D
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
INITIAL ACCURACY
1
“E” Grade V
O
I
OUT
= 0 mA 2.498 2.500 2.502 V
“F” Grade 2.495 2.505 V
“G” Grade 2.490 2.510 V
LINE REGULATION
2
“E” Grade ∆VO/∆V
IN
3.0 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 2 4 ppm/V
“F & G” Grades 4 8 ppm/V
LOAD REGULATION
2
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 30 mA 4 10 ppm/mA
“F & G” Grades 6 15 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.5 V, I
LOAD
= 10 mA 1.00 V
VS = 3.9 V, I
LOAD
= 30 mA 1.40 V
LONG-TERM STABILITY
3
∆V
O
1000 Hours @ +125°C1.2mV
NOISE VOLTAGE e
N
0.1 Hz to 10 Hz 25 µV p-p
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
TEMPERATURE COEFFICIENT
1, 2
“E” Grade TCV
O
/°CI
OUT
= 0 mA 2 5 ppm/°C
“F” Grade 5 10 ppm/°C
“G” Grade
3
10 25 ppm/°C
LINE REGULATION
4
“E” Grade ∆VO/∆V
IN
3.0 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 5 10 ppm/V
“F & G” Grades 10 20 ppm/V
LOAD REGULATION
4
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 25 mA 5 15 ppm/mA
“F & G” Grades 10 20 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.5 V, I
LOAD
= 10 mA 1.00 V
VS = 4.0 V, I
LOAD
= 25 mA 1.50 V
SLEEP PIN
Logic High Input Voltage V
H
2.4 V
Logic High Input Current I
H
–8 µA
Logic Low Input Voltage V
L
0.8 V
Logic Low Input Current I
L
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (T
MAX–TMIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
(@ VS = 3.3 V, TA = +25ⴗC unless otherwise noted)
(@ VS = 3.3 V, T
A
= –40ⴗC ≤ TA ≤ +85ⴗC unless otherwise noted)
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
TEMPERATURE COEFFICIENT
1, 2
“E” Grade TCV
O
/°CI
OUT
= 0 mA 2 ppm/°C
“F” Grade 5 ppm/°C
“G” Grade
3
10 ppm/°C
LINE REGULATION
4
“E” Grade ∆VO/∆V
IN
3.0 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 10 ppm/V
“F & G” Grades 20 ppm/V
LOAD REGULATION
4
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 20 mA 10 ppm/mA
“F & G” Grades 20 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.5 V, I
LOAD
= 10 mA 1.00 V
VS = 4.0 V, I
LOAD
= 20 mA 1.50 V
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (T
MAX–TMIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REF19x Series
–5–
REV. D
(@ V
S
= 3.3 V, –40ⴗC ≤ TA ≤ +125ⴗC unless otherwise noted)
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
INITIAL ACCURACY
1
“G” Grade V
O
I
OUT
= 0 mA 2.990 3.0 3.010 V
LINE REGULATION
2
“G” Grades
∆
VO/∆V
IN
3.3 V, ≤ VS ≤ 15 V, I
OUT
= 0 mA 4 8 ppm/V
LOAD REGULATION
2
“G” Grade
∆
VO/∆V
LOADVS
= 5.0 V, 0 ≤ I
OUT
≤ 30 mA 6 15 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.8 V, I
LOAD
= 10 mA 0.80 V
VS = 4.0 V, I
LOAD
= 30 mA 1.00 V
LONG-TERM STABILITY
3
∆
V
O
1000 Hours @ +125°C 1.2 mV
NOISE VOLTAGE e
N
0.1 Hz to 10 Hz 30 µV p-p
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
(@ VS = 3.3 V, TA = +25ⴗC unless otherwise noted)
REF19x Series
–6–
REV. D
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
TEMPERATURE COEFFICIENT
1, 2
“G” Grade
3
TCV
O
/°CI
OUT
= 0 mA 10 25 ppm/°C
LINE REGULATION
4
“G” Grade ∆VO/∆V
IN
3.3 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 10 20 ppm/V
LOAD REGULATION
4
“G” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 25 mA 10 20 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.8 V, I
LOAD
= 10 mA 0.80 V
VS = 4.1 V, I
LOAD
= 30 mA 1.10 V
SLEEP PIN
Logic High Input Voltage V
H
2.4 V
Logic High Input Current I
H
–8 µA
Logic Low Input Voltage V
L
0.8 V
Logic Low Input Current I
L
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (T
MAX–TMIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
TEMPERATURE COEFFICIENT
1, 2
“G” Grade
3
TCV
O
/°CI
OUT
= 0 mA 10 ppm/°C
LINE REGULATION
4
“G” Grade ∆VO/∆V
IN
3.3 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 20 ppm/V
LOAD REGULATION
4
“G” Grade ∆VO/∆V
LOAD
V
S
= 5.0 V, 0 ≤ I
OUT
≤ 20 mA 10 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 3.8 V, I
LOAD
= 10 mA 0.80 V
VS = 4.1 V, I
LOAD
= 20 mA 1.10 V
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (T
MAX–TMIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
(@ V
S
= 3.3 V, –40ⴗC ≤ TA ≤ +125ⴗC unless otherwise noted)
(@ VS = 3.3 V, T
A
= –40ⴗC ≤ TA ≤ +85ⴗC unless otherwise noted)
REF194–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
INITIAL ACCURACY
1
“E” Grade V
O
I
OUT
= 0 mA 4.498 4.5 4.502 V
“F” Grade 4.495 4.505 V
“G” Grade 4.490 4.510 V
LINE REGULATION
2
“E” Grade ∆VO/∆V
IN
4.75 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 2 4 ppm/V
“F & G” Grades 4 8 ppm/V
LOAD REGULATION
2
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.8 V, 0 ≤ I
OUT
≤ 30 mA 2 4 ppm/mA
“F & G” Grades 4 8 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 5.00 V, I
LOAD
= 10 mA 0.50 V
VS = 5.8 V, I
LOAD
= 30 mA 1.30 V
LONG-TERM STABILITY
3
∆V
O
1000 Hours @ +125°C2mV
NOISE VOLTAGE e
N
0.1 Hz to 10 Hz 45 µV p-p
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
Parameter Symbol Condition Min Typ Max Units
TEMPERATURE COEFFICIENT
1, 2
“E” Grade TCV
O
/°CI
OUT
= 0 mA 2 5 ppm/°C
“F” Grade 5 10 ppm/°C
“G” Grade
3
10 25 ppm/°C
LINE REGULATION
4
“E” Grade ∆VO/∆V
IN
4.75 V ≤ VS ≤ 15 V, I
OUT
= 0 mA 5 10 ppm/V
“F & G” Grades 10 20 ppm/V
LOAD REGULATION
4
“E” Grade ∆VO/∆V
LOAD
V
S
= 5.80 V, 0 ≤ I
OUT
≤ 25 mA 5 15 ppm/mA
“F & G” Grades 10 20 ppm/mA
DROPOUT VOLTAGE V
S
– V
O
VS = 5.00 V, I
LOAD
= 10 mA 0.5 V
VS = 5.80 V, I
LOAD
= 25 mA 1.30 V
SLEEP PIN
Logic High Input Voltage V
H
2.4 V
Logic High Input Current I
H
–8 µA
Logic Low Input Voltage V
L
0.8 V
Logic Low Input Current I
L
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (T
MAX–TMIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REF19x Series
–7–
REV. D
(@ VS = 5.0 V, T
A
= –40ⴗC ≤ TA ≤ +85ⴗC unless otherwise noted)
(@ VS = 5.0 V, TA = +25ⴗC unless otherwise noted)
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