Analog Devices BUF04 Datasheet
Closed-Loop
a
FEATURES
Bandwidth – 110 MHz
Slew Rate – 3000 V/ms
Low Offset Voltage – <1 mV
Very Low Noise – < 4 nV/√
Low Supply Current – 8.5 mA Mux
Wide Supply Range – 65 V to 615 V
Drives Capacitive Loads
Pin Compatible with BUF03
APPLICATIONS
Instrumentation Buffer
RF Buffer
Line Driver
High Speed Current Source
Op Amp Output Current Booster
High Performance Audio
High Speed AD/DA
GENERAL DESCRIPTION
The BUF04 is a wideband, closed-loop buffer that combines
state of the art dynamic performance with excellent dc
performance. This combination enables designers to maximize
system performance without any speed versus dc accuracy
compromises.
Built on a high speed Complementary Bipolar (CB) process for
better power performance ratio, the BUF04 consumes less than
8.5 mA operating from ±5 V or ±15 V supplies. With a 2000 V/µs
min slew rate, and 100 MHz gain bandwidth product, the
BUF04 is ideally suited for use in high speed applications where
low power dissipation is critical.
Full ±10 V output swing over the extended temperature range
along with outstanding ac performance and high loop gain
accuracy makes the device useful in high speed data acquisition
systems.
Hz
High Speed Buffer
BUF04*
FUNCTIONAL BLOCK DIAGRAMS
Plastic DIP
8-Lead Narrow-Body SO
(S Suffix)
1
BUF04
High slew rate and very low noise and THD, coupled with wide
input and output dynamic range, make the BUF04 an excellent
choice for video and high performance audio circuits.
The BUF04’s inherent ability to drive capacitive loads over a
wide voltage and temperature range makes it extremely useful
for a wide variety of applications in military, industrial, and
commercial equipment.
The BUF04 is specified over the extended industrial (–40°C to
+85°C) and military (–55°C to +125°C) temperature range.
BUF04s are available in plastic and ceramic DIP plus SO-8
surface mount packages.
Contact your local sales office for MIL-STD-883 data sheet and
availability.
*Patent pending.
8-Lead and Cerdip
(P, Z Suffix)
1
1
NULL
NC
IN
V–
BUF04
Top View
2
3
4
NC = NO CONNECT
8
NULL
7
V+
6
OUT
5
NC
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700 Fax: 617/326-8703
BUF04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 615.0 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
B
Input Voltage Range V
Offset Voltage Drift ∆V
OS
CM
/∆T30µV/°C
OS
–40°C ≤ T
V
CM
–40°C ≤ T
≤ +85°C 1.3 4 mV
A
= 0 0.7 5 µA
≤ +85°C 2.2 10 µA
A
0.3 1 mV
±13 V
Offset Null Range ±25 mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
Output Current – Continuous I
Peak Output Current I
O
OUT
OUTP
R
= 150 Ω, ±10.5 ±11.1 V
L
–40°C ≤ T
R
= 2 kΩ, ±13 ±13.5 V
L
–40°C ≤ T
≤ +85°C ±10 ±11 V
A
≤ +85°C ±13 ±13.15 V
A
±50 ±65 mA
Note 2 ±80 mA
TRANSFER CHARACTERISTICS
Gain A
VCL
Gain Linearity NL R
R
= 2 kΩ 0.995 0.9985 1.005 V/V
L
–40°C ≤ T
= 1 kΩ, VO = ±10 V 0.005 %
L
R
= 150 kΩ 0.008 %
L
≤ +85°C 0.995 0.9980 1.005 V/V
A
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
Supply Current I
SY
= ±4.5 V to ± 18 V 76 93 dB
S
–40°C ≤ T
VO = 0 V, R
≤ +85°C7693 dB
A
= ∞ 6.9 8.5 mA
L
–40°C ≤ TA ≤ +85°C 6.9 8.5 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
Bandwidth BW –3 dB, C
Bandwidth BW –3 dB, C
Bandwidth BW –3 dB, C
Settling Time V
Differential Phase f = 3.58 MHz, R
Differential Gain f = 3.58 MHz, R
= 2 kΩ, CL = 70 pF 2000 3000 V/µs
L
IN
f = 4.43 MHz, R
f = 4.43 MHz, R
= 20 pF, R
L
= 20 pF, R
L
= 20 pF, R
L
= ∞ 110 MHz
L
= 1 kΩ 110 MHz
L
= 150 Ω 110 MHz
L
= ±10 V Step to 0.1% 60 ns
= 150 Ω 0.02 Degrees
L
= 150 Ω 0.03 Degrees
L
= 150 Ω 0.014 %
L
= 150 Ω 0.008 %
L
Input Capacitance 3pF
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
NOTE
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C with an LTPD of 1.3.
Specifications subject to change without notice.
n
n
f = 1 kHz 4 nV/√Hz
f = 1 kHz 2 pA/√Hz
–2–
REV. 0
BUF04
ELECTRICAL CHARACTERISTICS
(@ VS = 65.0 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
B
Input Voltage Range V
Offset Voltage Drift ∆V
OS
CM
/∆T30µV/°C
OS
–40°C ≤ T
V
CM
–40°C ≤ T
≤ +85°C 1.0 4 mV
A
= 0 V 0.15 5 µA
≤ +85°C 1.6 10 µA
A
0.8 2.0 mV
±3.0 V
Offset Null Range ±25 mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
Output Current - Continuous I
Peak Output Current I
O
OUT
OUTP
R
= 150 Ω, ±3.0 V
L
–40°C ≤ T
R
= 2 kΩ, ±3.0 ±3.6 V
L
–40°C ≤ T
≤ +85°C ±2.75 ±3.00 V
A
≤ +85°C ±3.0 ±3.35 V
A
±40 mA
Note 2 ±75 mA
TRANSFER CHARACTERISTICS
Gain A
VCL
Gain Linearity NL R
R
= 2 kΩ, 0.995 0.9977 1.005 V/V
L
–40°C ≤ T
= 1 kΩ 0.005 %
L
≤ +85°C 0.995 1.005 V/V
A
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
Supply Current I
SY
= ±4.5 V to ± 18 V 76 93 dB
S
–40°C ≤ T
VO = 0 V, R
≤ +85°C7693 dB
A
= ∞ 6.60 8 mA
L
–40°C ≤ TA ≤ +85°C 6.70 8 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
Bandwidth BW –3 dB, C
Bandwidth BW –3 dB, C
Bandwidth BW –3 dB, C
Differential Phase f = 3.58 MHz, R
Differential Gain f = 3.58 MHz, R
= 2 kΩ, CL = 70 pF 2000 V/µs
L
f = 4.43 MHz, R
f = 4.43 MHz, R
= 20 pF, R
L
= 20 pF, R
L
= 20 pF, R
L
= 150 Ω 0.13 Degrees
L
= 150 Ω 0.15 Degrees
L
= 150 Ω 0.04 %
L
= 150 Ω 0.06 %
L
= ∞ 100 MHz
L
= 1 kΩ 100 MHz
L
= 150 Ω 100 MHz
L
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
NOTE
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
n
n
f = 1 kHz 4 nV/√Hz
f = 1 kHz 2 pA/√Hz
REV. 0
–3–
BUF04
WAFER TEST LIMITS
(@ VS = 615.0 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Limit Units
Offset Voltage V
Input Bias Current I
OS
V
OS
B
V
= ±15 V 1 mV max
S
V
= ±5 V 2 mV max
S
V
= 0 V 5 µA max
CM
Power Supply Rejection Ratio PSRR V = ±4.5 V to ±18 V 76 dB
Output Voltage Range V
Supply Current I
Gain A
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
O
SY
VCL
1
R
= 150 Ω±10.5 V min
L
VO = 0 V, R
V
= ±10 V, RL = 2 kΩ 1 ± 0.005 V/V
O
= 2 kΩ 8.5 mA max
L
DICE CHARACTERISTICS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Maximum Power Dissipation . . . . . . . . . . . . . . . See Figure 16
Storage Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
BUF04Z . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
BUF04S, P . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C
Package Type θ
2
JA
θ
JC
Units
8-Pin Cerdip (Z) 148 16 °C/W
8-Pin Plastic DIP (P) 103 43 °C/W
8-Pin SOIC (S) 158 43 °C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket
for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit
board for SOIC package.
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
BUF04AZ/883 –55°C to +125°C Cerdip Q-8
BUF04GP –40°C to +85°C Plastic DIP N-8
BUF04GS –40°C to +85°C SO SO-8
BUF04GBC +25°C DICE DICE
BUF04 Die Size 0.075 x 0.064 inch, 5,280 Sq. Mils
Substrate (Die Backside) Is Connected to V+
Transistor Count 45.
–4–
REV. 0
Typical Performance Characteristics–
125–50–75 1007550250–25
TEMPERATURE – °C
–1.0
–5.0
–6.0
–3.0
–4.0
–2.0
0
INPUT BIAS CURRENT – µA
VS = ±5V
VS = ±15V
BUF04
150
VS = ±15V
120
90
UNITS
60
30
30
0
0
OFFSET – mV
315 PLASTIC DIPS
T
= +25°C
A
0.60.0–0.1 0.50.40.30.20.1
Figure 1. Input Offset Voltage (VOS) Distribution @
±
15 V, P-DIP
125
VS = ±5V
100
75
UNITS
50
315 PLASTIC DIPS
T
= +25°C
A
200
VS = ±15V
160
120
UNITS
80
40
0
–0.15
–0.1
OFFSET – mV
315 CERDIPS
T
= +25°C
A
0.150.10.50–0.5
0.2
Figure 4. Input Offset Voltage (VOS) Distribution @
±
15 V, Cerdip
125
VS = ±5V
100
75
UNITS
50
315 CERDIPS
T
= +25°C
A
25
0
OFFSET – mV
1.40.20 1.21.00.80.60.4
Figure 2. Input Offset Voltage (VOS) Distribution @
±
5 V, P-DIP
2.0
1.0
0
–1.0
–2.0
OFFSET – mV
–3.0
–4.0
–5.0
–6.0
Figure 3. Input Offset Voltage (VOS) vs. Temperature
±15V
TEMPERATURE – °C
±5V
125–50–75 1007550250–25
25
0
0.2
0
OFFSET – mV
1.4
1.21.00.80.60.4
Figure 5. Input Offset Voltage (VOS) Distribution @
±
5 V, Cerdip
Figure 6. Input Bias Current vs. Temperature
REV. 0
–5–
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