Analog Devices ADT14 Datasheet

Quad Setpoint, Programmable
VOLTAGE
REFERENCE
AND
SENSOR
CURRENT
MIRROR
WINDOW
COMPARATORS
HYSTERESIS VOLTAGE
TEMPERATURE OUTPUT
HYSTERESIS
SETPOINT OUTPUT 1
SETPOINT OUTPUT 2
SETPOINT OUTPUT 3
SETPOINT OUTPUT 4
VPTAT
2.5V
V
REF
SET 1
SET 2
SET 3
SET 4
GND
V+
ADT14
a
Temperature Monitor and Controller
ADT14
FEATURES Four Programmable Temperature Setpoints Programmable Thermal Hysteresis Accuracy 638C Typ from –408C to +1258C Temperature Output Scale Factor = 5 mV/K Resistor Programmable Temperature Setpoints 5 mA Open-Collector Setpoint Outputs Internal 2.5 V Reference 600 mA Max Quiescent Current at +5 V
APPLICATIONS Power Supply Monitor and Control System Multiple Fan Controller System Workstation Thermal Management System
GENERAL DESCRIPTION
The ADT14 is a temperature sensor and controller that generates an output voltage proportional to temperature and provides four temperature trip points. The four trip points, or temperature setpoints, and their hysteresis are determined by voltage levels set by the user. An on-chip voltage reference provides an easy method for setting the temperature trip points.
The ADT14 consists of a bandgap voltage reference combined with four matched comparators. The reference provides both a temperature-stable 2.5 V output, and a voltage proportional to absolute temperature (VPTAT) which has a precise temperature coefficient of 5 mV/K = 5 mV/(°C +273.15). The VPTAT out­put is nominally 1.49 V at +25°C. The comparators determine whether the VPTAT output is above the voltages set up by external resistive dividers (temperature trip points) and generate an open-collector output signal when one of their respective thresholds has been exceeded.
Hysteresis is programmed by a user-selected voltage at the hys­teresis pin. This voltage adjusts the hysteresis current which is used to generate a hysteresis offset voltage. The comparator’s noninverting inputs are connected in parallel, which guarantees that there is no hysteresis overlap and eliminates erratic transi­tions between adjacent trip zones.
Using a proprietary thin-film resistor process in conjunction with production laser trimming, a temperature accuracy of ±3°C at 25°C is guaranteed. The open-collector outputs are capable of sinking 5 mA, and provide TTL/CMOS logic compatibility with an external pull-up resistor. Operating from a single 5 V supply, the quiescent current is 600 µA max.
The ADT14 is available in the 16-lead epoxy DIP and SO (small outline) packages.
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP & SO
OUTPUT 1
SETPOINT 1
NC NC
VPTAT
SETPOINT 2
OUTPUT 2
1 2 3
ADT14
4
TOP VIEW
5
(Not to Scale)
6 7 8
NC = NO CONNECT
OUTPUT 4
16
SETPOINT 4
15
2.5V REFERENCE
14
V+
13
NCGROUND
12
HYSTERESIS
11
SETPOINT 3
10
OUTPUT 3
9
ADT14G–SPECIFICATIONS
(V+ = 5 V, –408C TA +1258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
ACCURACY
Accuracy (Setpoints 1, 2, 3 and 4) T Accuracy (Setpoints 1, 2, 3 and 4) T
= +25°C ±2 ±3 °C
A
= –40°C to +125°C ±3 ±5 °C
A
VPTAT Output Scale Factor +4.9 +5 +5.1 mV/K Setpoint Hysteresis Levels T Power Supply Rejection Ratio PSRR 4.5 V V
= +25°C 0.65, 1.5, 5 °C
A
13 V 0.1 0.25 °C/V
S
Linearity 0.5 °C
SETPOINT INPUTS
Offset Voltage V
OS
Offset Voltage Mismatch T Output Voltage Drift TCV Input Bias Current I
B
OS
T
= +25°C1mV
A
= +25°C 0.5 mV
A
3 µV/°C 25 100 nA
REFERENCE OUTPUT
Line Regulation 4.5 V V Load Regulation I Output Voltage V Output Voltage V Output Drift TCV
REF REF
REF
SOURCE
T
= +25°C, No Load 2.49 2.5 2.51 V
A
No Load, –40°C TA +125°C 2.48 2.5 2.52 V
13 V ±0.1 %/V
S
= 10 µA to 500 µA ±0.25 %/mA
±30 ppm/°C
OPEN-COLLECTOR OUTPUTS
Output Low Voltage V
Output Low Voltage V Output Leakage Current I Fall Time t
OL
OL OH HL
I
= 1.6 mA,
SINK
–40°C T I
SINK
+85°C 0.25 0.4 V
A
= 5 mA 0.6 V
V+ = 12 V 1 100 µA See Figure 1 40 ns
POWER SUPPLY
Supply Range V+ 4.5 5.5 V Supply Current I Supply Current I
Specifications subject to change without notice.
SY SY
Unloaded at +5 V 400 600 µA Unloaded at +12 V 450 µA
ABSOLUTE MAXIMUM RATINGS*
Maximum Supply Voltage . . . . . . . . . . . . . . –0.3 V to +15 V
Maximum Setpoint Input Voltage . . –0.3 V to ([V+] +0.3 V)
Maximum Reference Output Current . . . . . . . . . . . . . .1 mA
Maximum Open-Collector Output Current . . . . . . . . . 15 mA
Maximum Open-Collector Output Voltage . . . . . . . . . +15 V
Operating Temperature Range . . . . . . . . . –55°C to +150°C
Dice Junction Temperature . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range . . . . . . . . . . . –65°C to +160°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . +300°C
*CAUTION
1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation at or above this specification is not implied. Exposure to the above maximum rating conditions for extended periods may affect device reliability.
2. Digital inputs are protected; however, permanent damage may occur on unprotected units from high-energy electro­static fields. Keep units in conductive foam or packaging at all times until ready to use. Use proper antistatic handling procedures.
3. Remove power before inserting or removing units from their sockets.
ORDERING GUIDE
Temperature Package Package
Model/Grade Range
1
Description Options
ADT14GP XIND Plastic DIP N-16 ADT14GS XIND SOIC R-16A
NOTES
1
XIND = 2408C to 11258C.
2
N = Plastic DIP; R = Small Outline.
THERMAL PACKAGE CHARACTERISTICS
Package Type u
JA
u
JC
Units
16-Lead Plastic DIP 103 34 8C/W 16-Lead SOIC 81 27 8C/W
V+
1k
20pF
Figure 1. Test Load
2
–2–
REV. 0
ADT14
WAFER TEST LIMITS
(V+ = +5 V, GND = 0 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUTS SET HIGH, SET LOW
Input Bias Current I
B
70 nA
OUTPUT VPTAT
Temperature Accuracy T
OUTPUT V
Nominal Value V
REF
REF
= +25°C, No Load 1.5 °C
A
T
= +25°C, No Load 2.490 2.510 V
A
Line Regulation 4.5 V V 13.2 V ±0.08 %/V Load Regulation 10 µA IV
500 µA ±0.25 %/mA
REF
OPEN-COLLECTOR OUTPUTS OVER, UNDER
Output Low Voltage V Output Leakage Current I
OL
OH
I
= 1.6 mA 0.4 V
SINK
100 µA
POWER SUPPLY
Supply Range V+ 4.5 5.5 V Supply Current I
NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly and nominal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on lot qualification through sample lot assembly and testing.
SY
Unloaded 600 µA
DICE CHARACTERISTICS
Die Size 0.069 × 0.080 inch, 5520 sq. mils
(1.75 × 2.03 mm, 3.55 sq. mm)
Transistor Count: 130
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADT14 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0
–3–
WARNING!
ESD SENSITIVE DEVICE
ADT14
–Typical Performance Characteristics
160
140
120
100
80
60
TIME CONSTANT – sec
40
20
0
0 700100 200 300 400 500 600
TRANSITION FROM +100°C STIRRED OIL BATH TO FORCED +25°C AIR
V+ = +5V, NO LOAD
SOIC SOLDERED TO 0.6" 0.5" Cu PCB
PDIP IN SOLDERTAIL SOCKET SOLDERED TO 0.8"
AIR VELOCITY – FPM
0.6" Cu PCB
Figure 2. Thermal Time Constant in Forced Air
100
90
80 70
60 50
40 30
CHANGE IN TEMPERATURE – %
20 10
0
0305 10152025
SOIC SOLDERED TO 0.6" 0.5" Cu PCB
PDIP IN SOLDERTAIL SOCKET SOLDERED TO 0.8"
V+ = +5V, NO LOAD
0.6" Cu PCB
TIME – sec
40µs
V
VPTAT
IN
1.5V
5V
100
90
0V
10
0%
0V
Figure 5. Start-Up Response
5
4
3 2
1 0
1 2
ACCURACY ERROR – °C
3 4
5
50 15025 25 50 75 125
V+ = +5V, NO LOAD
TEMPERATURE – °C
500mV
MAX LIMIT
MIN LIMIT
1000
Figure 3. Thermal Response in Stirred Oil Bath
5.0
START-UP VOLTAGE DEFINED AS OUTPUT VALUE BEING WITHIN
4.5
4.0
3.5
START-UP VOLTAGE – V
3.0 75 17525 25 75 125
5 C OF OUTPUT AT +5V
NO LOAD
TEMPERATURE – C
Figure 4. Start-Up Voltage vs. Temperature
Figure 6. Accuracy Error vs. Temperature, Stirred Oil Bath
600
500
400
300
200
SUPPLY CURRENT – A
100
0
0162 4 6 8 10 12 14
TA = +25°C, NO LOAD
SUPPLY VOLTAGE – V
Figure 7. Supply Current vs. Supply Voltage
–4–
REV. 0
ADT14
500
475
450
425
400
375
SUPPLY CURRENT – µA
350
325
300
75 17525 25 75 125
TEMPERATURE – °C
V+ = +5V, NO LOAD
Figure 8. Supply Current vs. Temperature
40
35
30
25
20
VOL = +1V, V+ = +5V
2.52
2.515
2.51
2.505
2.5
2.495
2.49
REFERENCE VOLTAGE – V
2.485
2.48 75 17525 25 75 125
TEMPERATURE – °C
MAX LIMIT
V+ = +5V, NO LOAD
MIN LIMIT
Figure 11. Reference Voltage vs. Temperature
0.1 V+ = +4.5V TO +13V
NO LOAD
0.075
0.05
15
10
5
OPEN-COLLECTOR SINK CURRENT – mA
0
75 17525 25 75 125
TEMPERATURE – °C
Figure 9. Open-Collector Output Sink Current vs. Temperature
700
V+ = +5V, NO LOAD
600
500
400
300
200
100
OPEN-COLLECTOR OUTPUT VOLTAGE – mV
0
75 17525 25 75 125
I
= 5mA
LOAD
I
= 1mA
LOAD
TEMPERATURE – °C
0.025
POWER SUPPLY REJECTION – C/V
0
25
50
0 25 50 75 100 125
TEMPERATURE – °C
150
Figure 12. VPTAT Power Supply Rejection vs. Temperature
500µs
20mV
V
2.5V
LOAD
V
REF
100
90
0V
10
0%
Figure 10. Open-Collector Output Voltage vs. Temperature
REV. 0
–5–
Figure 13. V
= 5 k
R
LOAD
Under Load Switching (0 µA–500 µA),
REF
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