ANALOG DEVICES ADR430, ADR431, ADR433, ADR434, ADR435 Service Manual

Ultralow Noise XFET Voltage References

T

2

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ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

with Current Sink and Source Capability

FEATURES

Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 V output No external capacitor required Low temperature coefficient

A Grade: 10 ppm/°C maximum

B Grade: 3 ppm/°C maximum Load regulation: 15 ppm/mA Line regulation: 20 ppm/V Wide operating range

ADR430: 4.1 V to 18 V

ADR431: 4.5 V to 18 V

ADR433: 5.0 V to 18 V

ADR434: 6.1 V to 18 V

ADR435: 7.0 V to 18 V

ADR439: 6.5 V to 18 V High output source and sink current: +30 mA and −20 mA Wide temperature range: −40°C to +125°C

APPLICATIONS

Precision data acquisition systems High resolution data converters Medical instruments Industrial process control systems Optical control circuits Precision instruments

PIN CONFIGURATIONS

1

TP

ADR43x

V

2

IN

TOP VIEW

NC

3

(Not to Scale)

GND

4

NOTES

1. NC = NO CONNECT

2. TP = TEST PIN (DO NOT CONNECT )

Figure 1. 8-Lead MSOP (RM-8)

1

TP

ADR43x

V

2

IN

TOP VIEW

NC

3

(Not to Scale)

GND

4

NOTES

1. NC = NO CONNEC . TP = TEST PIN (DO NOT CONNECT)

Figure 2. 8-Lead SOIC_N (R-8)

8

TP

NC

7

6

V

OUT

5

TRIM

04500-001

TP

8

7

NC

6

V

OUT

TRIM

5

04500-041

GENERAL DESCRIPTION

The ADR43x series is a family of XFET® voltage references featuring low noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage change vs. temperature nonlinearity in the ADR43x is minimized.

The XFET references operate at lower current (800 µA) and l

ower supply voltage headroom (2 V) than buried Zener references. Buried Zener references require more than 5 V headroom for operation. The ADR43x XFET references are the only low noise solutions for 5 V systems.

The ADR43x family has the capability to source up to 30 mA of

utput current and sink up to 20 mA. It also comes with a trim

o terminal to adjust the output voltage over a 0.5% range without compromising performance.

The ADR43x is available in 8-lead MSOP and 8-lead narrow SO

IC packages. All versions are specified over the extended

industrial temperature range of −40°C to +125°C.

Rev. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

Table 1. Selection Guide

Temperature

Model

Output V

oltage (V)

Accuracy, ± (mV)

C

oefficient

(ppm/°C)

ADR430A 2.048 3 10 ADR430B 2.048 1 3 ADR431A 2.500 3 10 ADR431B 2.500 1 3 ADR433A 3.000 4 10 ADR433B 3.000 1.5 3 ADR434A 4.096 5 10 ADR434B 4.096 1.5 3 ADR435A 5.000 6 10 ADR435B 5.000 2 3 ADR439A 4.500 5.5 10 ADR439B 4.500 2 3

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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REVISION HISTORY

12/07—Rev. C to Rev. D

Changes to Initial Accuracy and Ripple Rejection Ratio

arameters in Table 2 through Table 7 .......................................... 3

P

Changes to Table 9............................................................................ 9

Changes to Theory of Operation Section.................................... 15

Updated Outline Dimensions....................................................... 20

8/06—Rev. B to Rev. C

Updated Format..................................................................Universal

Changes to Table 1............................................................................ 1

Changes to Table 3............................................................................ 4

Changes to Table 4............................................................................ 5

Changes to Table 7............................................................................ 8

Changes to Figure 26...................................................................... 14

Changes to Figure 31...................................................................... 16

Updated Outline Dimensions....................................................... 20

Changes to Ordering Guide.......................................................... 21

9/04—Rev. A to Rev. B

Added New Grade..............................................................Universal

Changes to Specifications.................................................................3

Replaced Figure 3, Figure 4, Figure 5........................................... 10

Updated Ordering Guide .............................................................. 21

6/04—Rev. 0 to Rev. A

Changes to Format............................................................. Universal

Changes to the Ordering Guide ................................................... 20

12/03—Revision 0: Initial Version

Rev. D | Page 2 of 24

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SPECIFICATIONS

ADR430 ELECTRICAL CHARACTERISTICS

VIN = 4.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.

Table 2.

Parameter Symbol Conditions Min Typ Max Unit

OUTPUT VOLTAGE VO

A Grade 2.045 2.048 2.051 V B Grade 2.047 2.048 2.049 V

INITIAL ACCURACY V

A Grade ±3 mV ±0.15 % B Grade ±1 mV ±0.05 %

TEMPERATURE COEFFICIENT TCVO

A Grade −40°C < TA < +125°C 2 10 ppm/°C

B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VO/∆VIN VIN = 4.1 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VO/∆IL IL = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA ∆VO/∆IL IL = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 560 800 μA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 μV p-p VOLTAGE NOISE DENSITY eN 1 kHz 60 nV/√Hz TURN-ON SETTLING TIME tR C LONG-TERM STABILITY OUTPUT VOLTAGE HYSTERESIS V RIPPLE REJECTION RATIO RRR fIN = 1 kHz –70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE

OPERATING RANGE SUPPLY VOLTAGE HEADROOM VIN − VO 2 V

1

The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.

1

OERR

= 0 μF 10 μs

L

∆VO 1000 hours 40 ppm

20 ppm

O_HYS

4.1 18 V

V

IN

Rev. D | Page 3 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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ADR431 ELECTRICAL CHARACTERISTICS

VIN = 4.5 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.

Table 3.

Parameter Symbol Conditions Min Typ Max Unit

OUTPUT VOLTAGE VO

A Grade 2.497 2.500 2.503 V B Grade 2.499 2.500 2.501 V

INITIAL ACCURACY V

A Grade ±3 mV ±0.12 % B Grade ±1 mV ±0.04 %

TEMPERATURE COEFFICIENT TCVO

A Grade −40°C < TA < +125°C 2 10 ppm/°C

B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VO/∆VIN VIN = 4.5 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VO/∆IL IL = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA ∆VO/∆IL IL = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 580 800 μA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 μV p-p VOLTAGE NOISE DENSITY eN 1 kHz 80 nV/√Hz TURN-ON SETTLING TIME tR C LONG-TERM STABILITY OUTPUT VOLTAGE HYSTERESIS V RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE

OPERATING RANGE V SUPPLY VOLTAGE HEADROOM VIN − VO 2 V

1

The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.

1

OERR

= 0 μF 10 μs

L

∆VO 1000 hours 40 ppm

20 ppm

O_HYS

4.5 18 V

IN

Rev. D | Page 4 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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ADR433 ELECTRICAL CHARACTERISTICS

VIN = 5.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.

Table 4.

Parameter Symbol Conditions Min Typ Max Unit

OUTPUT VOLTAGE VO

A Grade 2.996 3.000 3.004 V B Grade 2.9985 3.000 3.0015 V

INITIAL ACCURACY V

A Grade ±4 mV ±0.13 % B Grade ±1.5 mV ±0.05 %

TEMPERATURE COEFFICIENT TCVO

A Grade −40°C < TA < +125°C 2 10 ppm/°C B Grade −40°C < TA < +125°C 1 3 ppm/°C

LINE REGULATION ∆VO/∆VIN

LOAD REGULATION ∆VO/∆IL

∆VO/∆IL

QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 590 800 μA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.75 μV p-p VOLTAGE NOISE DENSITY eN 1 kHz 90 nV/√Hz TURN-ON SETTLING TIME tR C LONG-TERM STABILITY

1

OUTPUT VOLTAGE HYSTERESIS

RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE

OPERATING RANGE V SUPPLY VOLTAGE

HEADROOM

1

The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.

OERR

= 5 V to 18 V, −40°C < TA <

V

IN

5 20 ppm/V

+125°C

= 0 mA to 10 mA, VIN = 6 V,

I

L

−40°C < T = −10 mA to 0 mA, VIN = 6 V,

I

L

−40°C < T

= 0 μF 10 μs

L

< +125°C

A

< +125°C

A

15 ppm/mA

∆VO 1000 hours 40 ppm V

20 ppm

O_HYS

5.0 18 V

IN

V

− VO 2 V

IN

Rev. D | Page 5 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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ADR434 ELECTRICAL CHARACTERISTICS

VIN = 6.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.

Table 5.

Parameter Symbol Conditions Min Typ Max Unit

OUTPUT VOLTAGE VO

A Grade 4.091 4.096 4.101 V B Grade 4.0945 4.096 4.0975 V

INITIAL ACCURACY V

A Grade ±5 mV ±0.12 % B Grade ±1.5 mV ±0.04 %

TEMPERATURE COEFFICIENT TCVO

A Grade −40°C < TA < +125°C 2 10 ppm/°C

B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VO/∆VIN VIN = 6.1 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VO/∆IL IL = 0 mA to 10 mA, VIN = 7 V, −40°C < TA < +125°C 15 ppm/mA ∆VO/∆IL IL = −10 mA to 0 mA, VIN = 7 V, −40°C < TA < +125°C 15 ppm/mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 595 800 μA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 6.25 μV p-p VOLTAGE NOISE DENSITY eN 1 kHz 100 nV/√Hz TURN-ON SETTLING TIME tR C LONG-TERM STABILITY OUTPUT VOLTAGE HYSTERESIS V RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE

OPERATING RANGE V SUPPLY VOLTAGE HEADROOM VIN − VO 2 V

1

The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.

1

OERR

= 0 μF 10 μs

L

∆VO 1000 hours 40 ppm

20 ppm

O_HYS

6.1 18 V

IN

Rev. D | Page 6 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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ADR435 ELECTRICAL CHARACTERISTICS

VIN = 7.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.

Table 6.

Parameter Symbol Conditions Min Typ Max Unit

OUTPUT VOLTAGE VO

A Grade 4.994 5.000 5.006 V B Grade 4.998 5.000 5.002 V

INITIAL ACCURACY V

A Grade ±6 mV ±0.12 % B Grade ±2 mV ±0.04 %

TEMPERATURE COEFFICIENT TCVO

A Grade −40°C < TA < +125°C 2 10 ppm/°C

B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VO/∆VIN VIN = 7 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VO/∆IL IL = 0 mA to 10 mA, VIN = 8 V, −40°C < TA < +125°C 15 ppm/mA ∆VO/∆IL IL = −10 mA to 0 mA, VIN = 8 V, −40°C < TA < +125°C 15 ppm/mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 620 800 μA VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 8 μV p-p VOLTAGE NOISE DENSITY eN 1 kHz 115 nV/√Hz TURN-ON SETTLING TIME tR C LONG-TERM STABILITY OUTPUT VOLTAGE HYSTERESIS V RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE OPERATING RANGE VIN 7.0 18 V SUPPLY VOLTAGE HEADROOM VIN − VO 2 V

1

The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.

1

OERR

= 0 μF 10 μs

L

∆VO 1000 hours 40 ppm

20 ppm

O_HYS

Rev. D | Page 7 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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ADR439 ELECTRICAL CHARACTERISTICS

VIN = 6.5 V to 18 V, IL = 0 mV, TA = 25°C, unless otherwise noted.

Table 7.

Parameter Symbol Conditions Min Typ Max Unit

OUTPUT VOLTAGE VO

A Grade 4.4946 4.500 4.5054 V B Grade 4.498 4.500 4.502 V

INITIAL ACCURACY V

A Grade ±5.5 mV ±0.12 % B Grade ±2 mV ±0.04 %

TEMPERATURE COEFFICIENT TCVO

A Grade −40°C < TA < +125°C 2 10 ppm/°C

B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VO/∆VIN VIN = 6.5 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VO/∆IL IL = 0 mA to 10 mA, VIN = 6.5 V, −40°C < TA < +125°C 15 ppm/mA ∆VO/∆IL IL = −10 mA to 0 mA, VIN = 6.5 V, −40°C < TA < +125°C 15 ppm/mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 600 800 μA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 7.5 μV p-p VOLTAGE NOISE DENSITY eN 1 kHz 110 nV/√Hz TURN-ON SETTLING TIME tR C LONG-TERM STABILITY OUTPUT VOLTAGE HYSTERESIS V RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE OPERATING RANGE VIN 6.5 18 V SUPPLY VOLTAGE HEADROOM VIN − VO 2 V

1

The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.

1

OERR

= 0 μF 10 μs

L

∆VO 1000 hours 40 ppm

20 ppm

O_HYS

Rev. D | Page 8 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 8.

Parameter Rating

Supply Voltage 20 V Output Short-Circuit Duration to GND Indefinite Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +125°C Junction Temperature Range −65°C to +150°C Lead Temperature, Soldering (60 sec) 300°C

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages.

Table 9. Thermal Resistance

Package Type θJA θJC Unit

8-Lead SOIC_N (R) 130 43 °C/W 8-Lead MSOP (RM) 142 44 °C/W

ESD CAUTION

Rev. D | Page 9 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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TYPICAL PERFORMANCE CHARACTERISTICS

Default conditions: ±5 V, CL = 5 pF, G = 2, Rg = Rf = 1 kΩ, RL = 2 kΩ, VO = 2 V p-p, f = 1 MHz, TA = 25°C, unless otherwise noted.

0.8

2.5009

2.5007

0.7

+125°C

2.5005

2.5003

2.5001

OUTPUT VOLTAGE (V)

2.4999

2.4997

2.4995 –40 –25 –10 5 20 35 50 65 80 95 110 125

TEMPERATURE (° C)

Figure 3. ADR431 Output Voltage vs. Temperature

4.0980

4.0975

4.0970

AGE (V)

4.0965

4.0960

OUTPUT VOL

4.0955

0.6

0.5

SUPPLY CURRENT (mA)

0.4

0.3

04500-015

Figure 6. ADR435 Supply Current vs. Input Vo

700

650

600

550

500

SUPPLY CURRENT (µA)

450

+25°C

–40°C

8104 6 12 14 16

INPUT VOLTAGE (V)

ltage

04500-018

4.0950 –40 –25 –1 0 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

Figure 4. ADR434 Output Voltage vs. Temperature

5.0025

5.0020

5.0015

AGE (V)

5.0010

5.0005

OUTPUT VOL

5.0000

4.9995

4.9990 –40 –25 –1 0 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

Figure 5. ADR435 Output Voltage vs. Temperature

04500-016

04500-017

Rev. D | Page 10 of 24

400

–40 –25 –10 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

Figure 7. ADR435 Supply Current vs. Temperature

0.60

0.58

0.56

0.54

0.52

0.50

0.48

0.46

SUPPLY CURRENT (mA)

0.44

0.42

0.40 10 126 8 14 16 18

INPUT VOLTAGE (V)

+125°C

+25°C

–40°C

Figure 8. ADR431 Supply Current vs. Input Vo

ltage

04500-019

04500-020

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

A

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610

2.5

580

550

520

490

460

SUPPLY CURRENT (µA)

430

400

–40 –25 –10 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

Figure 9. ADR431 Supply Current vs. Temperature

15

12

9

TION (ppm/mA)

6

LOAD REGUL

3

0

–40 –25 –10 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

IL= 0mA to 10mA

Figure 10. ADR431 Load Regulation vs. Temperature

15

IL= 0mA to 10mA

2.0

–40°C

1.5

+25°C

1.0 +125°C

DIFFERENTIAL VOLTAGE (V)

0.5

0

04500-021

–5–10 0 5 10

LOAD CURRENT (mA)

04500-024

Figure 12. ADR431 Minimum Input/Output

Dif

ferential Voltage vs. Load Current

1.9

1.8

1.7

1.6

1.5

1.4

1.3

MINIMUM HEADROOM (V)

1.2

1.1

1.0 –40 –25 –10 5 2 0 35 50 65 80 95 110 125

04500-022

TEMPERATURE (°C)

NO LOAD

04500-025

Figure 13. ADR431 Minimum Headroom vs. Temperature

2.5

12

9

TION (ppm/mA)

6

LOAD REGUL

3

0

–40 –25 –10 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

04500-023

Figure 11. ADR435 Load Regulation vs. Temperature

Rev. D | Page 11 of 24

2.0

–40°C

1.5

L VOLTAGE (V)

1.0

DIFFERENTI

0.5

0

+25°C

+125°C

–5–10 0 5 10

LOAD CURRENT (mA)

04500-026

Figure 14. ADR435 Minimum Input/Output

ferential Voltage vs. Load Current

Dif

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

A

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1.9

1.7

1.5

1.3

MINIMUM HEADROOM (V)

1.1

NO LOAD

CL = 0.01µF NO INPUT CAPACITOR

V

= 2V/DIV

IN

= 1V/DIV

O

0.9 –40 –25 –10 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

Figure 15. ADR435 Minimum Headroom vs. Temperature

20

16

12

TION (ppm/V)

8

4

LINE REGUL

0

–4

–40 –25 –10 5 20 35 50 65 80 95 110 125

TEMPERATURE (°C)

VIN=7V TO18V

Figure 16. ADR435 Line Regulation vs. Temperature

CIN = 0.01µF NO LOAD

= 1V/DIV

V

O

TIME = 4µ s/DIV

04500-027

Figure 18. ADR431 Turn-On Respons

V

= 1V/DIV

O

= 2V/DIV

V

IN

04500-028

e, 0.01 μF Load Capacitor

CIN = 0.01µF NO LOAD

TIME = 4µ s/DIV

04500-031

4500-032

Figure 19. ADR431 Turn-Off Response

BYPASS CAPACIT OR = 0µF

LINE INTERRUPTI ON

VIN = 500mV/DIV

= 2V/DIV

V

IN

TIME = 4µs/DIV

4500-030

Figure 17. ADR431 Turn-On Response

Rev. D | Page 12 of 24

= 50mV/DIV

V

O

TIME = 100µs/DIV

Figure 20. ADR431 Line Transient Respo

nse, No Capacitors

04500-033

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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V

= 500mV/DIV

IN

LINE INTERRUPTI ON

2µV/DIV

BYPASS CAPACITO R = 0.1µF

= 50mV/DIV

V

O

TIME = 100µ s/DIV

04500-034

Figure 21. ADR431 Line Transient Response, 0.1 μF Bypass Capacitor

1µV/DIV

TIME = 1s/DIV

04500-035

Figure 22. ADR431 0.1 Hz to 10.0 Hz Voltage Noise

TIME = 1s/DIV

Figure 24. ADR435 0.1 Hz to 10.0 Hz Voltage Noise

50µV/DIV

TIME = 1s/ DIV

Figure 25. ADR435 10 Hz to 10 kHz Voltage Noise

14

12

10

04500-037

04500-038

50µV/DIV

TIME = 1s/ DIV

04500-036

Figure 23. ADR431 10 Hz to 10 kHz Voltage Noise

Rev. D | Page 13 of 24

8

6

NUMBER OF PARTS

4

2

0 –110 –90 –70 –50 –30 –10 10 30 50 70 90 110

DEVIATIO N (PPM)

Figure 26. ADR431 Typical Hysteresis

04500-029

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

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50

45

40

35

30

25

20

15

OUTPUT IM PEDANCE (Ω)

10

5

0

100 10k1k 100k

FREQUENCY ( Hz)

Figure 27. Output Imped

R

D

A

ance vs. Frequency

4

3

ADR435

ADR430

04500-039

10

–10

–30

–50

–70

–90

RIPPLE REJECT ION (dB)

–110

–130

–150

10 100 1k 10k 100k 1M

FREQUENCY ( Hz)

04500-040

Figure 28. Ripple Rejection Ratio

Rev. D | Page 14 of 24

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(

)

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+θ×

=

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THEORY OF OPERATION

The ADR43x series of references uses a new reference generation technique known as XFET (eXtra implanted junction FET). This technique yields a reference with low supply current, good thermal hysteresis, and exceptionally low noise. The core of the XFET reference consists of two junction field-effect transistors (JFETs), one of which has an extra channel implant to raise its pinch-off voltage. By running the two JFETs at the same drain current, the difference in pinch-off voltage can be amplified and used to form a highly stable voltage reference.

The intrinsic reference voltage is around 0.5 V with a negative t

emperature coefficient of about –120 ppm/°C. This slope is essentially constant to the dielectric constant of silicon and can be closely compensated by adding a correction term generated in the same fashion as the proportional-to-temperature (PTAT) term used to compensate band gap references. The primary advantage of an XFET reference is its correction term, which is ~30 times lower and requires less correction than that of a band gap reference. Because most of the noise of a band gap reference comes from the temperature compensation circuitry, the XFET results in much lower noise.

Figure 29 shows the basic topology of the ADR43x series. The

emperature correction term is provided by a current source

t with a value designed to be proportional to absolute temperature. The general equation is

OUT

P

IR1VGV ×−=  (1)

PTAT

where:

G is the gain of the reciprocal of the divider ratio.

V

is the difference in pinch-off voltage between the two JFETs.

∆

P

I

is the positive temperature coefficient correction current.

PTAT

ADR43x devices are created by on-chip adjustment of R2 and R3 t

o achieve 2.048 V or 2.500 V, respectively, at the

reference output.

R2

R3

GND

IN

V

OUT

04500-002

I

PTAT

1

**

*EXTRA CHANNEL IMPLANT V

= G(ΔV

OUT

Figure 29. Simplified Schematic Device

Pow

I

1

ΔV

P

R1

– R1 × I

P

er Dissipation Considerations

PTAT

)

ADR43x

The ADR43x family of references is guaranteed to deliver load currents to 10 mA with an input voltage that ranges from 4.1 V to 18 V. When these devices are used in applications at higher currents, users should use the following equation to account for the temperature effects due to the power dissipation increases:

TPT

DJ

(2)

AJA

where:

T

and TA are the junction and ambient temperatures, respectively.

J

P

is the device power dissipation.

D

is the device package thermal resistance.

θ

JA

BASIC VOLTAGE REFERENCE CONNECTIONS

Voltage references, in general, require a bypass capacitor connected from V

to GND. The circuit in Figure 30

OUT

illustrates the basic configuration for the ADR43x family of references. Other than a 0.1 µF capacitor at the output to help improve noise suppression, a large output capacitor at the output is not required for circuit stability.

1

TP

IN

+

10µF

0.1µF

Figure 30. Basic Voltage Reference Configuration

2

ADR43x

TOP VIEW

3

NC

(Not to Scale)

GND

4

NOTES:

1. NC = NO CONNECT

2. TP = TEST PIN (DO NOT CONNECT )

TP

8

NC

7

V

OUT

6

5

TRIM

0.1µF

04500-003

NOISE PERFORMANCE

The noise generated by the ADR43x family of references is typically less than 3.75 µV p-p over the 0.1 Hz to 10.0 Hz band for ADR430, ADR431, and ADR433. Figure 22 shows the

z to 10.0 Hz noise of the ADR431, which is only 3.5 µV p-p.

0.1 H The noise measurement is made with a band-pass filter made of a 2-pole high-pass filter with a corner frequency at 0.1 Hz and a 2-pole low-pass filter with a corner frequency at 10.0 Hz.

TURN-ON TIME

Upon application of power (cold start), the time required for the output voltage to reach its final value within a specified error band is defined as the turn-on settling time. Two components normally associated with this are the time for the active circuits to settle and the time for the thermal gradients on the chip to stabilize. Figure 17 and Figure 18 show the turn-on

ettling time for the ADR431.

s

Rev. D | Page 15 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

www.BDTIC.com/ADI

APPLICATIONS

ACTIVATOR

LEFT

SOURCE FIBER

GIMBAL + SENSOR

MEMS MIRROR

AMPL

DAC

PREAMP

ADC

AMPL

DAC

DESTINATION FIBER

ACTIVATOR RIGHT

ADR431

OUTPUT ADJUSTMENT

The ADR43x trim terminal can be used to adjust the output voltage over a ±0.5% range. This feature allows the system designer to trim system errors out by setting the reference to a voltage other than the nominal. This is also helpful if the part is used in a system at temperature to trim out any error. Adjustment of the output has negligible effect on the temperature performance of the device. To avoid degrading temperature coefficients, both the trimming potentiometer and the two resistors need to be low temperature coefficient types, preferably <100 ppm/°C.

INPUT

LASER BEAM

CONTROL

ELECTRONICS

V

IN

V

OUT

ADR43x

TRIM

GND

Figure 31. Output Trim Adjustment

R1

470kΩ

OUTPUT

R 10kΩ

10kΩ (ADR430)

R2

15kΩ (ADR431)

VO = ±0.5%

P

4500-004

REFERENCE FOR CONVERTERS IN OPTICAL NETWORK CONTROL CIRCUITS

In Figure 32, the high capacity, all-optical router network employs arrays of micromirrors to direct and route optical signals from fiber to fiber without first converting them to electrical form, which reduces the communication speed. The tiny micromechanical mirrors are positioned so that each is illuminated by a single wavelength that carries unique information and can be passed to any desired input and output fiber. The mirrors are tilted by the dual-axis actuators, which are controlled by precision ADCs and DACs within the system. Due to the microscopic movement of the mirrors, not only is the precision of the converters important but the noise associated with these controlling converters is also extremely critical. Total noise within the system can be multiplied by the number of converters employed. Therefore, to maintain the stability of the control loop for this application, the ADR43x, with its exceptionally low noise, is necessary.

DSP

GND

Figure 32. All-Optica

l Router Network

NEGATIVE PRECISION REFERENCE WITHOUT PRECISION RESISTORS

In many current-output CMOS DAC applications, where the output signal voltage must be of the same polarity as the reference voltage, it is required to reconfigure a current-switching DAC into a voltage-switching DAC through the use of a 1.25 V reference, an operational amplifier, and a pair of resistors. Using a current-switching DAC directly requires an additional operational amplifier at the output to reinvert the signal. A negative voltage reference is desirable because an additional operational amplifier is not required for either reinversion (current-switching mode) or amplification (voltage-switching mode) of the DAC output voltage. In general, any positive voltage reference can be converted to a negative voltage reference through the use of an operational amplifier and a pair of matched resistors in an inverting configuration. The disadvantage of this approach is that the largest single source of error in the circuit is the relative matching of the resistors used.

A negative reference can easily be generated by adding a preci-

n operational amplifier, such as the OP777 or the OP193, and

sio configuring it as shown in Figure 33. V therefore, the negative reference can be taken directly from the output of the amplifier. The operational amplifier must be dual supply and have low offset and rail-to-rail capability if negative supply voltage is close to the reference output.

is at virtual ground;

OUT

04500-005

Rev. D | Page 16 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

V

www.BDTIC.com/ADI

+

DD

2

V

IN

V

6

OUT

ADR43x

GND

4

A1

–V

DD

–V

REF

4500-006

Figure 33. Negative Reference

HIGH VOLTAGE FLOATING CURRENT SOURCE

The circuit in Figure 34 can be used to generate a floating current source with minimal self heating. This particular configuration can operate on high supply voltages determined by the breakdown voltage of the N-channel JFET.

+

S

SST111

VISHAY

2

V

IN

V

OUT

6

ADR43x

GND

4

OP90

Figure 34. High Voltage Floating Current Source

2N3904

R

2.1kΩ

–V

S

L

04500-007

KELVIN CONNECTION

In many portable instrumentation applications, where PC board cost and area go hand in hand, circuit interconnects are very often of dimensionally minimum width. These narrow lines can cause large voltage drops if the voltage reference is required to provide load currents to various functions. In fact, circuit interconnects can exhibit a typical line resistance of 0.45 mΩ/square (1 oz. Cu, for example). Force and sense connections, also referred to as Kelvin connections, offer a convenient method of eliminating the effects of voltage drops in circuit wires. Load currents flowing through wiring resistance produce an error

V

= R × IL) at the load. However, the Kelvin connection of

(

ERROR

Figure 35 overcomes the problem by including the wiring re

sistance within the forcing loop of the operational amplifier.

Because the amplifier senses the load voltage, the operational amplifier loop control forces the output to compensate for the wiring error and to produce the correct voltage at the load.

IN

2

ADR43x

6

V

OUT

GND

4

Figure 35. Advantage of Kelvin Connection

A1

OP191

+

R

LW

V

IN

V

OUT

SENSE

R

LW

V

OUT

FORCE

R

L

04500-008

DUAL-POLARITY REFERENCES

Dual-polarity references can easily be made with an operational amplifier and a pair of resistors. To avoid defeating the accuracy obtained by ADR43x, it is imperative to match the resistance tolerance as well as the temperature coefficient of all the components.

IN

1µF 0.1µF

Figure 36. +5 V and −5 V References Using ADR435

+10V

Figure 37. +2.5 V and −2.5 V References Using ADR435

2

V

GND

2

V

IN

ADR435

GND

4

IN

ADR435

U1

4

V

OUT

U1

TRIM

V

OUT

TRIM

5

6

5

5.6kΩ

10kΩ

5kΩ

+2.5

R1

R2

–2.5V

R1

R3

+10V

V+

OP1177

U2

V–

–

10V

V+

OP1177

U2

V–

–10V

10kW

+5V

R2

–5V

04500-009

04500-010

Rev. D | Page 17 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

www.BDTIC.com/ADI

PROGRAMMABLE CURRENT SOURCE

Together with a digital potentiometer and a Howland current pump, ADR435 forms the reference source for a programmable current as

RR2

+

2

⎛

A

⎜ ⎜

I ×

=

L

⎜ ⎜ ⎝

and

D

V ×=

W

N

2

where:

D is the decimal equivalent of the input code. N is the number of bits.

In addition, R1' and R2' must be equal to respectively. In theory, R2 achieve the necessary current within the A2 output current driving capability. In this example, OP2177 can deliver a maximum output current of 10 mA. Because the current pump employs both positive and negative feedback, C1 and C2 capacitors are needed to ensure that the negative feedback prevails and, therefore, avoids oscillation. This circuit also allows bidirectional current flow if the V digital potentiometer are supplied with the dual-polarity references, as shown in

V

DD

2

V

IN

TRIM

5

ADR435

U1

V

6

OUT

GND

4

⎞

B

⎟

R1

⎟

V

(3)

R

2

B

V

REF

W

⎟ ⎟ ⎠

(4)

R1 and (R2

can be made as small as needed to

B

and VB inputs of the

A

+ R2B),

A

Figure 38.

C1

10pF

R1'

50kΩ

U2

AD5232

A

B

V

DD

V+

W

OP2177

A1

V–

V

SS

C2

10pF

R1

50kΩ

Figure 38. Programmable Current Source

R2'

1kΩ

V

DD

V+

OP2177

A2

V–

V

SS

R2 1kΩ

+

VL

–

R2

B

10Ω

A

I

L

I

L

04500-011

PROGRAMMABLE DAC REFERENCE VOLTAGE

By employing a multichannel DAC, such as a quad, 12-bit voltage output DAC (AD7398), one of its internal DACs and an ADR43x voltage reference can be used as a common programmable V configuration is shown in Figure 39.

V

REFA

DAC A

V

REFB

DAC B

V

REFC

DAC C

V

REFD

DAC D

The relationship of V and the ratio of R1 and R2, given by

=

V

REFX

where:

D is the decimal equivalent of the input code. N is the number of bits. V

is the applied external reference.

REF

V

is the reference voltage for DAC A to DAC D.

REFX

Table 10. V

REFX

R1, R2 Digital Code V

R1 = R2 0000 0000 0000 2 V R1 = R2 1000 0000 0000 1.3 V R1 = R2 1111 1111 1111 R1 = 3R2 0000 0000 0000 R1 = 3R2 1000 0000 0000 R1 = 3R2 1111 1111 1111 V

for the rest of the DACs. The circuit

REFX

R1 ± 0.1%

V

OUTA

V

IN

ADR43x

V

AD7398

V

OUTB

OUTC

OUTD

VOB=V

V

OC=VREFX(DC

V

OD=VREFX(DD

Figure 39. Programmable DAC Reference

to V

REFX

⎛

1

REF

1

+×

⎜ ⎝

R2D

×+

N

R1

2

V

⎛ ⎜ ⎝

depends on the digital code

REF

R2

⎞ ⎟

R1

⎠

(5)

⎞ ⎟ ⎠

vs. R1 and R2

R2 ± 0.1%

V

REF

REFX(DB

REF

V

REF

4 V

1.6 V

REF

)

REF

04500-012

Rev. D | Page 18 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

V

A

G

www.BDTIC.com/ADI

PRECISION VOLTAGE REFERENCE FOR DATA CONVERTERS

The ADR43x family has a number of features that make it ideal for use with ADCs and DACs. The exceptional low noise, tight temperature coefficient, and high accuracy characteristics make the ADR43x ideal for low noise applications such as cellular base station applications.

Another example of an ADC for which the ADR431 is well

uited is the AD7701. Figure 40 shows the ADR431 used as

s

e precision reference for this converter. The AD7701 is a 16-bit

th ADC with on-chip digital filtering intended for the measurement of wide dynamic range those representing chemical, physical, or biological processes. It contains a charge-balancing Σ- ADC, a calibration microcontroller with on-chip static RAM, a clock oscillator, and a serial communications port.

+5

NALO

SUPPLY

0.1µF

10µF

0.1µF

RANGES

SELECT

CALIBRATE

ANALOG

INPUT

ANALOG

GROUND

–5V

ANALOG

SUPPLY

0.1µF

Figure 40. Voltage Reference for the AD7701 16-Bit ADC

and low frequency signals, such as

AD7701

2

V

IN

V

OUT

ADR431

GND

4

0.1µF

10µF

AV

DD

V

6

REF

BP/UP

CAL

A

IN

AGND

AV

SS

DV

SLEEP

MODE

DRDY

CS

SCLK

SDATA

CLKIN

CLKOUT

SC1

SC2

DGND

DV

DD

SS

0.1µF

DATA READY

READ (TRANSMI T)

SERIAL CL OCK

SERIAL CLOCK

0.1µF

04500-013

PRECISION BOOSTED OUTPUT REGULATOR

A precision voltage output with boosted current capability can be realized with the circuit shown in Figure 41. In this circuit, U

2 forces V

to be equal to V

O

N1. Therefore, the load current is furnished by V configuration, a 50 mA load is achievable at V ate heat is generated on the MOSFET, and higher current can be achieved with a replacement of the larger device. In addition, for a heavy capacitive load with step input, a buffer can be added at the output to enhance the transient response.

V

IN

2

V

IN

U1

ADR431

V

6

OUT

TRIM

5

GND

4

Figure 41. Precision Boo

by regulating the turn-on of

REF

N1

5V

2N7002

+

V+

U2

AD8601

V–

–

sted Output Regulator

. In this

IN

of 5 V. Moder-

IN

R

L

25Ω

V

O

04500-014

Rev. D | Page 19 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

www.BDTIC.com/ADI

OUTLINE DIMENSIONS

3.20

3.00

2.80

8

5

4

SEATING PLANE

5.15

4.90

4.65

1.10 MAX

0.23

0.08

8° 0°

0.80

0.60

0.40

3.20

3.00

2.80

PIN 1

0.95

0.85

0.75

0.15

0.00

COPLANARITY

1

0.65 BSC

0.38

0.22

0.10

COMPLIANT TO JEDEC STANDARDS MO-187-AA

Figure 42. 8-Lead Mini Small Outline Package [MSOP]

(RM-8)

Dim

ensions shown in millimeters

5.00 (0.1968)

4.80 (0.1890)

4.00 (0.1574)

3.80 (0.1497)

0.25 (0.0098)

0.10 (0.0040)

COPLANARITY

0.10

CONTROLL ING DIMENSI ONS ARE IN MILLIMETERS; INCH DI MENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRI ATE FOR USE IN DES IGN.

85

1

1.27 (0.0500)

SEATING

PLANE

COMPLIANT TO JEDEC STANDARDS MS-012-A A

BSC

6.20 (0.2441)

5.80 (0.2284)

4

1.75 (0.0688)

1.35 (0.0532)

0.51 (0.0201)

0.31 (0.0122)

8° 0°

0.25 (0.0098)

0.17 (0.0067)

0.50 (0.0196)

0.25 (0.0099)

1.27 (0.0500)

0.40 (0.0157)

45°

012407-A

Figure 43. 8-Lead Standard Small Outline Package [SOIC_N]

Nar

row Body

(R-8)

Dimensions shown in millimeters and (inches)

Rev. D | Page 20 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

www.BDTIC.com/ADI

ORDERING GUIDE

Initial

Accuracy, ±

(mV) (%)

Model

Output Voltage (V)

ADR430AR 2.048 3 0.15 10 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR430AR-REEL7 2.048 3 0.15 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR430ARZ

1

ADR430ARZ-REEL7

2.048 3 0.15 10 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

2.048 3 0.15 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

ADR430ARM 2.048 3 0.15 10 8-Lead MSOP 50 RHA –40°C to +125°C RM-8 ADR430ARM-REEL7 2.048 3 0.15 10 8-Lead MSOP 1,000 RHA –40°C to +125°C RM-8 ADR430ARMZ

1

ADR430ARMZ-REEL7

2.048 3 0.15 10 8-Lead MSOP 50 R10 –40°C to +125°C RM-8

1

2.048 3 0.15 10 8-Lead MSOP 1,000 R10 –40°C to +125°C RM-8

ADR430BR 2.048 1 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR430BR-REEL7 2.048 1 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR430BRZ

1

ADR430BRZ-REEL7

2.048 1 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

2.048 1 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

ADR431AR 2.500 3 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR431AR-REEL7 2.500 3 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR431ARZ

1

ADR431ARZ-REEL7

2.500 3 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

2.500 3 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

ADR431ARM 2.500 3 0.12 10 8-Lead MSOP 50 RJA –40°C to +125°C RM-8 ADR431ARM-REEL7 2.500 3 0.12 10 8-Lead MSOP 1,000 RJA –40°C to +125°C RM-8 ADR431ARMZ

1

ADR431ARMZ-REEL7

2.500 3 0.12 10 8-Lead MSOP 50 R12 –40°C to +125°C RM-8

1

2.500 3 0.12 10 8-Lead MSOP 1,000 R12 –40°C to +125°C RM-8

ADR431BR 2.500 1 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR431BR-REEL7 2.500 1 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR431BRZ

1

ADR431BRZ-REEL7

2.500 1 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

2.500 1 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

ADR433AR 3.000 4 0.13 10 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR433AR-REEL7 3.000 4 0.13 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR433ARZ

1

ADR433ARZ-REEL7

3.000 4 0.13 10 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

3.000 4 0.13 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

ADR433ARM 3.000 4 0.13 10 8-Lead MSOP 50 RKA –40°C to +125°C RM-8 ADR433ARM-REEL7 3.000 4 0.13 10 8-Lead MSOP 1,000 RKA –40°C to +125°C RM-8 ADR433ARMZ

1

ADR433ARMZ-REEL7

3.000 4 0.13 10 8-Lead MSOP 50 R14 –40°C to +125°C RM-8

1

3.000 4 0.13 10 8-Lead MSOP 1,000 R14 –40°C to +125°C RM-8

ADR433BR 3.000 1.5 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR433BR-REEL7 3.000 1.5 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR433BRZ

1

ADR433BRZ-REEL7

3.000 1.5 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

3.000 1.5 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

ADR434AR 4.096 5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR434AR-REEL7 4.096 5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR434ARZ

1

ADR434ARZ-REEL7

4.096 5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

4.096 5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

ADR434ARM 4.096 5 0.12 10 8-Lead MSOP 50 RLA –40°C to +125°C RM-8 ADR434ARM-REEL7 4.096 5 0.12 10 8-Lead MSOP 1,000 RLA –40°C to +125°C RM-8 ADR434ARMZ

1

ADR434ARMZ-REEL7

4.096 5 0.12 10 8-Lead MSOP 50 R16 –40°C to +125°C RM-8

1

4.096 5 0.12 10 8-Lead MSOP 1,000 R16 –40°C to +125°C RM-8

ADR434BR 4.096 1.5 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR434BR-REEL7 4.096 1.5 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR434BRZ

1

ADR434BRZ-REEL7

4.096 1.5 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

4.096 1.5 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

Temperature Coef

ficient Package (ppm/°C)

Package

scription

De

Ordering Quantity Branding

Temperature Range

Package Option

Rev. D | Page 21 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

www.BDTIC.com/ADI

Initial

Model

ADR435AR 5.000 6 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR435AR-REEL7 5.000 6 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR435ARZ ADR435ARZ-REEL7 ADR435ARM 5.000 6 0.12 10 8-Lead MSOP 50 RMA –40°C to +125°C RM-8 ADR435ARM-REEL7 5.000 6 0.12 10 8-Lead MSOP 1,000 RMA –40°C to +125°C RM-8 ADR435ARMZ

ADR435ARMZ-REEL7 ADR435BR 5.000 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR435BR-REEL7 5.000 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR435BRZ ADR435BRZ-REEL7 ADR439AR 4.500 5.5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR439AR-REEL7 4.500 5.5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR439ARZ ADR439ARZ-REEL7 ADR439ARM 4.500 5.5 0.12 10 8-Lead MSOP 50 RNA –40°C to +125°C RM-8 ADR439ARM-REEL7 4.500 5.5 0.12 10 8-Lead MSOP 1,000 RNA –40°C to +125°C RM-8 ADR439ARMZ ADR439ARMZ-REEL7 ADR439BR 4.500 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8 ADR439BR-REEL7 4.500 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8 ADR439BRZ ADR439BRZ-REEL7

1

Z = RoHS Compliant Part.

1

Output Voltage (V)

5.000 6 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

5.000 6 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

5.000 6 0.12 10 8-Lead MSOP 50 R18 –40°C to +125°C RM-8

1

5.000 6 0.12 10 8-Lead MSOP 1,000 R18 –40°C to +125°C RM-8

5.000 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

5.000 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

4.500 5.5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

4.500 5.5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

4.500 5.5 0.12 10 8-Lead MSOP 50 R1C –40°C to +125°C RM-8

1

4.500 5.5 0.12 10 8-Lead MSOP 1,000 R1C –40°C to +125°C RM-8

4.500 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8

1

4.500 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8

Accuracy, ±

(mV) (%)

Temperature

ficient

Coef Package (ppm/°C)

Package

scription

De

Ordering Quantity Branding

Temperature Range

Package Option

Rev. D | Page 22 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

www.BDTIC.com/ADI

NOTES

Rev. D | Page 23 of 24

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

www.BDTIC.com/ADI

NOTES

Rev. D | Page 24 of 24

ANALOG DEVICES ADR430, ADR431, ADR433, ADR434, ADR435 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

APPLICATIONS

PIN CONFIGURATIONS

GENERAL DESCRIPTION

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

ADR430 ELECTRICAL CHARACTERISTICS

ADR431 ELECTRICAL CHARACTERISTICS

ADR433 ELECTRICAL CHARACTERISTICS

ADR434 ELECTRICAL CHARACTERISTICS

ADR435 ELECTRICAL CHARACTERISTICS

ADR439 ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE

ESD CAUTION

TYPICAL PERFORMANCE CHARACTERISTICS

THEORY OF OPERATION

BASIC VOLTAGE REFERENCE CONNECTIONS

NOISE PERFORMANCE

TURN-ON TIME

APPLICATIONS

OUTPUT ADJUSTMENT

REFERENCE FOR CONVERTERS IN OPTICAL NETWORK CONTROL CIRCUITS

NEGATIVE PRECISION REFERENCE WITHOUT PRECISION RESISTORS

HIGH VOLTAGE FLOATING CURRENT SOURCE

KELVIN CONNECTION

DUAL-POLARITY REFERENCES

PROGRAMMABLE CURRENT SOURCE

PROGRAMMABLE DAC REFERENCE VOLTAGE

PRECISION VOLTAGE REFERENCE FOR DATA CONVERTERS

PRECISION BOOSTED OUTPUT REGULATOR

OUTLINE DIMENSIONS

ORDERING GUIDE