ANALOG DEVICES ADR431-EP, ADR434-EP, ADR435-EP Service Manual

Low Noise XFET Voltage References with

FEATURES

Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 V
No external capacitor required
Low temperature coefficient

T Grade: 3 ppm/°C maximum (ADR434-EP/ADR435-EP)

T Grade: 5 ppm/°C maximum (ADR431-EP)
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range: 4.5 V to 18 V (ADR431-EP)
High output source and sink current: +10 mA and −10 mA

ENHANCED PRODUCT FEATURES

Supports defense and aerospace applications (AQEC

standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request

(ADR431-EP)

OUT

Current Sink and Source Capability

ADR431-EP/ADR434-EP/ADR435-EP

PIN CONFIGURATION

ADR431-EP/

1

TP

ADR434-EP/

V

2

IN

ADR435-EP

3

NC

GND

NOTES

1. NC = NO CONNECT .

2. TP = TE ST PIN (DO NOT CONNECT).

TOP VIEW

4

(Not to S cale)

Figure 1. 8-Lead SOIC_N (R-8)

8
7
6
5

TP
COMP
V

OUT

TRIM

09218-001

APPLICATIONS

Precision data acquisition systems
High resolution data converters
Optical control circuits
Precision instruments

GENERAL DESCRIPTION

The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage
references featuring low noise, high accuracy, and low temperature
drift performance. Using Analog Devices, Inc., patented temperature
drift curvature correction and XFET (eXtra implanted junction
FET) technology, voltage change vs. temperature nonlinearity in
the ADR431-EP/ADR434-EP/ADR435-EP is minimized.

The XFET references operate at lower current (800 μA) and
lower supply voltage headroom (2 V) than buried Zener
references. Buried Zener references require more than 5 V
headroom for operation. The ADR431-EP/ADR434-EP/
ADR435-EP XFET references are optimal low noise solutions
for 5 V systems.

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

The ADR431-EP/ADR434-EP/ADR435-EP have the capability
to source up to 10 mA of output current and sink up to −10 mA.
They also come with a trim terminal to adjust the output
voltage over a 0.5% range without compromising performance.

The ADR431-EP/ADR434-EP/ADR435-EP are available in an
8-lead narrow SOIC package and are specified over the military
temperature range of −55°C to +125°C.

Additional application and technical information can be found
in the ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
data sheet.

Table 1. Selection Guide

Model

Output
Voltage (V)

Accuracy
(mV)

Te mp e ra tu r e
Coefficient (ppm/°C)

ADR431T-EP 2.500 ±1.0 5
ADR434T-EP 4.096 ±1.5 3
ADR435T-EP 5.000 ±2.0 3

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2010 Analog Devices, Inc. All rights reserved.

ADR431-EP/ADR434-EP/ADR435-EP

TABLE OF CONTENTS

Features .............................................................................................. 1

Enhanced Product Features ............................................................ 1

Applications ....................................................................................... 1

Pin Configuration ............................................................................. 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

ADR431-EP Electrical Characteristics ...................................... 3

ADR434-EP Electrical Characteristics ...................................... 4

REVISION HISTORY

8/10—Rev. 0 to Rev. A

Added ADR431-EP ....................................................... Throughout

Added ADR435-EP ....................................................... Throughout

Changes to Ordering Guide ............................................................ 8

7/10—Revision 0: Initial Version

ADR435-EP Electrical Characteristics .......................................5

Absolute Maximum Ratings ............................................................6

Thermal Resistance .......................................................................6

ESD Caution...................................................................................6

Typical Performance Characteristics ..............................................7

Outline Dimensions ..........................................................................8

Ordering Guide .............................................................................8

Rev. A | Page 2 of 8

ADR431-EP/ADR434-EP/ADR435-EP

SPECIFICATIONS

ADR431-EP ELECTRICAL CHARACTERISTICS

VIN = 4.5 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.

Table 2.

Parameter Symbol Test Conditions/Comments Min Typ Max Unit

OUTPUT VOLTAGE VO

T Grade 2.499 2.500 2.501 V

INITIAL ACCURACY V

T Grade ±1.0 mV

±0.04 %

TEMPERATURE COEFFICIENT TCVO

T Grade −55°C < TA < +125°C 1.5 5 ppm/°C

LINE REGULATION ΔVO/ΔVIN VIN = 4.5 V to 18 V, −55°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ΔVO/ΔIL IL = 0 mA to 10 mA, VIN = 5 V, −55°C < TA < +125°C 15 ppm/mA
ΔVO/ΔIL IL = −10 mA to 0 mA, VIN = 5 V, −55°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −55°C < TA < +125°C 580 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 80 nV/√Hz
TURN-ON SETTLING TIME tR C
LONG-TERM STABILITY1 ∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 4.5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V

1

The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.

OERR

= 0 μF 10 μs

L

20 ppm

O_HYS

Rev. A | Page 3 of 8