Low Noise XFET Voltage References with
FEATURES
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 V
No external capacitor required
Low temperature coefficient
T Grade: 3 ppm/°C maximum (ADR434-EP/ADR435-EP)
T Grade: 5 ppm/°C maximum (ADR431-EP)
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range: 4.5 V to 18 V (ADR431-EP)
High output source and sink current: +10 mA and −10 mA
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
(ADR431-EP)
OUT
Current Sink and Source Capability
ADR431-EP/ADR434-EP/ADR435-EP
PIN CONFIGURATION
ADR431-EP/
1
TP
ADR434-EP/
V
2
IN
ADR435-EP
3
NC
GND
NOTES
1. NC = NO CONNECT .
2. TP = TE ST PIN (DO NOT CONNECT).
TOP VIEW
4
(Not to S cale)
Figure 1. 8-Lead SOIC_N (R-8)
8
7
6
5
TP
COMP
V
OUT
TRIM
09218-001
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Optical control circuits
Precision instruments
GENERAL DESCRIPTION
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage
references featuring low noise, high accuracy, and low temperature
drift performance. Using Analog Devices, Inc., patented temperature
drift curvature correction and XFET (eXtra implanted junction
FET) technology, voltage change vs. temperature nonlinearity in
the ADR431-EP/ADR434-EP/ADR435-EP is minimized.
The XFET references operate at lower current (800 μA) and
lower supply voltage headroom (2 V) than buried Zener
references. Buried Zener references require more than 5 V
headroom for operation. The ADR431-EP/ADR434-EP/
ADR435-EP XFET references are optimal low noise solutions
for 5 V systems.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
The ADR431-EP/ADR434-EP/ADR435-EP have the capability
to source up to 10 mA of output current and sink up to −10 mA.
They also come with a trim terminal to adjust the output
voltage over a 0.5% range without compromising performance.
The ADR431-EP/ADR434-EP/ADR435-EP are available in an
8-lead narrow SOIC package and are specified over the military
temperature range of −55°C to +125°C.
Additional application and technical information can be found
in the ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
data sheet.
Table 1. Selection Guide
Model
Output
Voltage (V)
Accuracy
(mV)
Te mp e ra tu r e
Coefficient (ppm/°C)
ADR431T-EP 2.500 ±1.0 5
ADR434T-EP 4.096 ±1.5 3
ADR435T-EP 5.000 ±2.0 3
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
ADR431-EP/ADR434-EP/ADR435-EP
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Pin Configuration ............................................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
ADR431-EP Electrical Characteristics ...................................... 3
ADR434-EP Electrical Characteristics ...................................... 4
REVISION HISTORY
8/10—Rev. 0 to Rev. A
Added ADR431-EP ....................................................... Throughout
Added ADR435-EP ....................................................... Throughout
Changes to Ordering Guide ............................................................ 8
7/10—Revision 0: Initial Version
ADR435-EP Electrical Characteristics .......................................5
Absolute Maximum Ratings ............................................................6
Thermal Resistance .......................................................................6
ESD Caution...................................................................................6
Typical Performance Characteristics ..............................................7
Outline Dimensions ..........................................................................8
Ordering Guide .............................................................................8
Rev. A | Page 2 of 8
ADR431-EP/ADR434-EP/ADR435-EP
SPECIFICATIONS
ADR431-EP ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
OUTPUT VOLTAGE VO
T Grade 2.499 2.500 2.501 V
INITIAL ACCURACY V
T Grade ±1.0 mV
±0.04 %
TEMPERATURE COEFFICIENT TCVO
T Grade −55°C < TA < +125°C 1.5 5 ppm/°C
LINE REGULATION ΔVO/ΔVIN VIN = 4.5 V to 18 V, −55°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ΔVO/ΔIL IL = 0 mA to 10 mA, VIN = 5 V, −55°C < TA < +125°C 15 ppm/mA
ΔVO/ΔIL IL = −10 mA to 0 mA, VIN = 5 V, −55°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −55°C < TA < +125°C 580 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 80 nV/√Hz
TURN-ON SETTLING TIME tR C
LONG-TERM STABILITY1 ∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 4.5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
OERR
= 0 μF 10 μs
L
20 ppm
O_HYS
Rev. A | Page 3 of 8
ADR431-EP/ADR434-EP/ADR435-EP
ADR434-EP ELECTRICAL CHARACTERISTICS
VIN = 6.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
OUTPUT VOLTAGE VO
T Grade 4.0945 4.096 4.0975 V
INITIAL ACCURACY V
T Grade ±1.5 mV
±0.04 %
TEMPERATURE COEFFICIENT TCVO
T Grade −55°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN VIN = 6.1 V to 18 V, −55°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ΔVO/ΔIL IL = 0 mA to 10 mA, VIN = 7 V, −55°C < TA < +125°C 15 ppm/mA
ΔVO/ΔIL IL = −10 mA to 0 mA, VIN = 7 V, −55°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −55°C < TA < +125°C 595 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 6.25 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 100 nV/√Hz
TURN-ON SETTLING TIME tR C
LONG-TERM STABILITY1 ∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 6.1 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
OERR
= 0 μF 10 μs
L
20 ppm
O_HYS
Rev. A | Page 4 of 8
ADR431-EP/ADR434-EP/ADR435-EP
ADR435-EP ELECTRICAL CHARACTERISTICS
VIN = 7.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 4.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
OUTPUT VOLTAGE VO
T Grade 4.998 5.000 5.002 V
INITIAL ACCURACY V
T Grade ±2.0 mV
±0.04 %
TEMPERATURE COEFFICIENT TCVO
T Grade −55°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN VIN = 7.0 V to 18 V, −55°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ΔVO/ΔIL IL = 0 mA to 10 mA, VIN = 8 V, −55°C < TA < +125°C 15 ppm/mA
ΔVO/ΔIL IL = −10 mA to 0 mA, VIN = 8 V, −55°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −55°C < TA < +125°C 620 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 8 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 115 nV/√Hz
TURN-ON SETTLING TIME tR C
LONG-TERM STABILITY1 ∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 7.0 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
OERR
= 0 μF 10 μs
L
20 ppm
O_HYS
Rev. A | Page 5 of 8
ADR431-EP/ADR434-EP/ADR435-EP
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter Rating
Supply Voltage 20 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −55°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature, Soldering (60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 6. Thermal Resistance
Package Type θJA θJC Unit
8-Lead SOIC_N (R) 130 43 °C/W
ESD CAUTION
Rev. A | Page 6 of 8
ADR431-EP/ADR434-EP/ADR435-EP
TYPICAL PERFORMANCE CHARACTERISTICS
±5 V, CL = 5 pF, G = 2, RG = RF = 1 kΩ, RL = 2 kΩ, VO = 2 V p-p, f = 1 MHz, TA = 25°C, unless otherwise noted.
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
SUPPLY CURRENT (mA)
0.40
0.35
0.30
6 8 10 12 14 16 18
+125°C
+25°C
–55°C
INPUT VOLTAGE (V)
09218-002
Figure 2. Supply Current vs. Temperature
Rev. A | Page 7 of 8
ADR431-EP/ADR434-EP/ADR435-EP
OUTLINE DIMENSIONS
5.00(0.1968)
4.80(0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLYAND ARE NOT APPROPRIATE FOR USE IN DESIGN.
85
1
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
BSC
6.20 (0.2441)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8°
0°
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
45°
012407-A
Figure 3. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Initial
Accuracy, ±
Model1
Output
Voltage (V)
ADR431TRZ-EP 2.500 1.0 0.04 5 −55°C to +125°C 8-Lead SOIC_N R-8 98
ADR431TRZ-EP-R7 2.500 1.0 0.04 5 −55°C to +125°C 8-Lead SOIC_N R-8 1,000
ADR434TRZ-EP 4.096 1.5 0.04 3 −55°C to +125°C 8-Lead SOIC_N R-8 98
ADR434TRZ-EP-R7 4.096 1.5 0.04 3 −55°C to +125°C 8-Lead SOIC_N R-8 1,000
ADR435TRZ-EP 5.000 2.0 0.04 3 −55°C to +125°C 8-Lead SOIC_N R-8 98
ADR435TRZ-EP-R7 5.000 2.0 0.04 3 −55°C to +125°C 8-Lead SOIC_N R-8 1,000
1
Z = RoHS Compliant Part.
Te mp e ra tu r e
Coefficient
Package (ppm/°C)
Te mp e ra tu r e
Range
Package
Description
Package
Option
Ordering
Quantity (mV) (%)
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09218-0-8/10(A)
Rev. A | Page 8 of 8
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