Low noise (0.1 Hz to 10 Hz): 3.5 µV p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
A Grade: 10 ppm/°C max
B Grade: 3 ppm/°C max
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
ADR439: 6.5 V to 18 V
High output current: +30 mA/−20 mA
Wide temperature range: −40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments
GENERAL DESCRIPTION
The ADR43x series is a family of XFET voltage references
featuring low noise, high accuracy, and low temperature drift
performance. Using ADI’s patented temperature drift curvature
correction and XFET (eXtra implanted junction FET) technology,
the ADR43x’s voltage change versus temperature nonlinearity is
minimized.
The XFET references operate at lower current (800 µA) and
supply headroom (2 V) than buried-Zener references. BuriedZener references require more than 5 V headroom for operations.
The ADR43x XFET references are the only low noise solutions
for 5 V systems.
The ADR43x series has the capability to source up to 30 mA
and sink up to 20 mA of output current. It also comes with a
TRIM terminal to adjust the output voltage over a 0.5% range
without compromising performance. The ADR43x is available
in the 8-lead mini SOIC and 8-lead SOIC packages.
PIN CONFIGURATIONS
1
TP
ADR43x
V
2
IN
TOP VIEW
NC
3
(Not to Scale)
GND
4
NC = NO CONNECT
Figure 1. 8-Lead MSOP
(RM Suffix)
TP
1
ADR43x
V
2
IN
TOP VIEW
3
NC
(Not to Scale)
GND
4
NC = NO CONNECT
Figure 2. 8-Lead SOIC
All versions are specified over the extended industrial temperature range (−40°C to +125°C).
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
−40°C < TA < +125°C 15 ppm/mA
Quiescent Current I
Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p
Voltage Noise Density e
Turn-On Settling Time t
Long-Term Stability
Output Voltage Hysteresis V
Ripple Rejection Ratio RRR fIN = 10 kHz –70 dB
Short Circuit to GND I
Supply Voltage Operating Range V
Supply Voltage Headroom VIN − V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
O
O
OERR
OERR
OERR
OERR
O
O
O
IN
LOAD
IN
N
1
∆V
SC
R
O
O_HYS
IN
O
2.047 2.048 2.049 V
2.045 2.048 2.051 V
1 mV
0.05 %
3 mV
0.15 %
−40°C < TA < +125°C 1 3 ppm/°C
−40°C < TA < +125°C 2 10
−40°C < TA < +125°C 2 10 ppm/°C
VIN = 4.1 V to 18 V
I
LOAD
LOAD
No load, −40°C < TA < +125°C 560 800 µA
1 kHz 60
CIN = 0 10 µs
1,000 h 40 ppm
20 ppm
40 mA
4.1 18 V
2 V
= 0 mA to 10 mA, VIN = 5.0 V
= −10 mA to 0 mA, VIN = 5.0 V
nV√
Hz
Rev. B | Page 3 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR431 ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 18 V, I
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade V
A Grade V
Initial Accuracy
B Grade V
B Grade V
A Grade V
A Grade V
Temperature Coefficient
SOIC-8 (B Grade) TCV
SOIC-8 (A Grade) TCV
MSOP-8 TCV
−40°C < TA < +125°C 15 ppm/mA
Quiescent Current IIN No load, −40°C < TA < +125°C 580 800 µA
Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p
Voltage Noise Density e
Turn-On Settling Time t
Long-Term Stability1 ∆VO 1,000 h 40 ppm
Output Voltage Hysteresis V
Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB
Short Circuit to GND ISC 40 mA
Supply Voltage Operating Range VIN 4.5 18 V
Supply Voltage Headroom VIN – VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
O
O
OERR
OERR
OERR
0.13 %
OERR
O
O
O
LOAD
N
R
20 ppm
O_HYS
2.499 2.500 2.501 V
2.497 2.500 2.503 V
1 mV
0.04 %
3 mV
−40°C < TA < +125°C 1 3 ppm/°C
−40°C < TA < +125°C 2 10 ppm/°C
−40°C < TA < +125°C 2 10 ppm/°C
I
LOAD
LOAD
1 kHz 80
CIN = 0 10 µs
= 0 mA to 10 mA, VIN = 5.0 V
= −10 mA to 0 mA, VIN = 5.0 V
nV√
Hz
Rev. B | Page 4 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR433 ELECTRICAL CHARACTERISTICS
VIN = 5 V to 18 V, I
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade V
A Grade V
Initial Accuracy
B Grade V
B Grade V
A Grade V
A Grade V
Temperature Coefficient TCVO
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C
SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C
MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
−40°C < TA < +125°C 15 ppm/mA
Quiescent Current IIN No load, −40°C < TA < +125°C 590 800 µA
Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.75 µV p-p
Voltage Noise Density eN 1 kHz 90
Turn-On Settling Time tR CIN = 0 10 µs
Long-Term Stability
Output Voltage Hysteresis V
Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB
Short Circuit to GND ISC 40 mA
Supply Voltage Operating Range VIN 5 18 V
Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA , TA = 25°C, unless otherwise noted.
LOAD
O
O
OERR
OERR
OERR
0.13 %
OERR
LOAD
1
∆VO 1,000 h 40 ppm
20 ppm
O_HYS
2.9985 3.000 3.0015 V
2.996 3.000 3.004 V
1.5 mV
0.05 %
4 mV
I
LOAD
LOAD
= 0 mA to 10 mA, VIN = 6 V
= −10 mA to 0 mA, VIN = 6 V
nV√
Hz
Rev. B | Page 5 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR434 ELECTRICAL CHARACTERISTICS
VIN = 6.1 V to 18 V, I
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade VO 4.0945 4.096 4.0975 V
A Grade VO 4.091 4.096 4.101 V
Initial Accuracy
B Grade V
B Grade V
A Grade V
A Grade V
Temperature Coefficient TCVO
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C
SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C
MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
−40°C < TA < +125°C 15 ppm/mA
Quiescent Current IIN No load, −40°C < TA < +125°C 595 800 µA
Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 6.25 µV p-p
Voltage Noise Density eN 1 kHz 100
Turn-On Settling Time tR CIN = 0 10 µs
Long-Term Stability1 ∆VO 1,000 h 40 ppm
Output Voltage Hysteresis V
Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB
Short Circuit to GND ISC 40 mA
Supply Voltage Operating Range VIN 6.1 18 V
Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
1.5 mV
OERR
0.04 %
OERR
5 mV
OERR
0.13 %
OERR
I
LOAD
20 ppm
O_HYS
= 0 mA to 10 mA, VIN = 7 V
LOAD
= −10 mA to 0 mA, VIN = 7 V
LOAD
nV√
Hz
Rev. B | Page 6 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR435 ELECTRICAL CHARACTERISTICS
VIN = 7 V to 18 V, I
Table 6.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade VO 4.998 5.000 5.002 V
A Grade VO 4.994 5.000 5.006 V
Initial Accuracy
B Grade V
B Grade V
A Grade V
A Grade V
Temperature Coefficient TCV
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C
SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C
MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
−40°C < TA < +125°C 15 ppm/mA
Quiescent Current IIN No load, −40°C < TA < +125°C 620 800 µA
Voltage Noise eN p-p 0.1 Hz to 10 Hz 8 µV p-p
Voltage Noise Density eN 1 kHz 115
Turn-On Settling Time tR CIN = 0 10 µs
Long-Term Stability1 ∆VO 1,000 h 40 ppm
Output Voltage Hysteresis V
Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB
Short Circuit to GND ISC 40 mA
Supply Voltage Operating Range VIN 7 18 V
Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
2 mV
OERR
0.04 %
OERR
6 mV
OERR
0.12 %
OERR
O
LOAD
20 ppm
O_HYS
I
= 0 mA to 10 mA, VIN = 8 V
LOAD
= −10 mA to 0 mA, VIN = 8 V
LOAD
nV/√
Hz
Rev. B | Page 7 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR439 ELECTRICAL CHARACTERISTICS
VIN = 6.5 V to 18 V, I
Table 7.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade VO 4.498 4.500 4.502 V
A Grade VO 4.4946 4.500 4.5054 V
Initial Accuracy
B Grade V
B Grade V
A Grade V
A Grade V
Temperature Coefficient TCVO
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C
SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C
MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
−40°C < TA < +125°C 15 ppm/mA
Quiescent Current IIN No load, −40°C < TA < +125°C 600 800 µA
Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 7.5 µV p-p
Voltage Noise Density eN 1 kHz 110
Turn-On Settling Time tR CIN = 0 10 µs
Long-Term Stability1 ∆VO 1,000 h 40 ppm
Output Voltage Hysteresis V
Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB
Short Circuit to GND ISC 40 mA
Supply Voltage Operating Range VIN 6.5 18 V
Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mV, TA = 25°C, unless otherwise noted.
LOAD
2 mV
OERR
0.04 %
OERR
5.4 mV
OERR
0.12 %
OERR
I
LOAD
20 ppm
O_HYS
= 0 mA to 10 mA, VIN = 6.5 V
LOAD
= −10 mA to 0 mA, VIN = 6.5 V
LOAD
nV/√
Hz
Rev. B | Page 8 of 24
Loading...
+ 16 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.