Analog Devices ADR430 1 3 4 5 9 b Datasheet

Ultralow Noise XFET® Voltage References
with Current Sink and Source Capability
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

FEATURES

Low noise (0.1 Hz to 10 Hz): 3.5 µV p-p @ 2.5 V output No external capacitor required Low temperature coefficient
A Grade: 10 ppm/°C max
B Grade: 3 ppm/°C max Load regulation: 15 ppm/mA Line regulation: 20 ppm/V Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
ADR439: 6.5 V to 18 V High output current: +30 mA/20 mA Wide temperature range: 40°C to +125°C

APPLICATIONS

Precision data acquisition systems High resolution data converters Medical instruments Industrial process control systems Optical control circuits Precision instruments

GENERAL DESCRIPTION

The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using ADI’s patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the ADR43x’s voltage change versus temperature nonlinearity is minimized.
The XFET references operate at lower current (800 µA) and supply headroom (2 V) than buried-Zener references. Buried­Zener references require more than 5 V headroom for operations. The ADR43x XFET references are the only low noise solutions for 5 V systems.
The ADR43x series has the capability to source up to 30 mA and sink up to 20 mA of output current. It also comes with a TRIM terminal to adjust the output voltage over a 0.5% range without compromising performance. The ADR43x is available in the 8-lead mini SOIC and 8-lead SOIC packages.

PIN CONFIGURATIONS

1
TP
ADR43x
V
2
IN
TOP VIEW
NC
3
(Not to Scale)
GND
4
NC = NO CONNECT
Figure 1. 8-Lead MSOP
(RM Suffix)
TP
1
ADR43x
V
2
IN
TOP VIEW
3
NC
(Not to Scale)
GND
4
NC = NO CONNECT
Figure 2. 8-Lead SOIC
All versions are specified over the extended industrial tempera­ture range (−40°C to +125°C).
Table 1. Selection Guide
Accuracy
Model V
OUT
(V)
(mV)
ADR430B 2.048 ±1 3 ADR430A 2.048 ±3 10 ADR431B 2.500 ±1 3 ADR431A 2.500 ±3 10 ADR433B 3.000 ±1.4 3 ADR433A 3.000 ±4 10 ADR434B 4.096 ±1.5 3 ADR434A 4.096 ±5 10 ADR435B 5.000 ±2 3 ADR435A 5.000 ±6 10 ADR439B 4.500 ±2 3 ADR439A 4.500 ±5.4 10
(R Suffix)
8
TP NC
7
V
6
OUT
TRIM
5
04500-0-001
TP
8 7
NC
6
V
OUT
5
TRIM
04500-0-041
Temperature Coefficient (ppm/°C)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
www.analog.com
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
TABLE OF CONTENTS
Specifications..................................................................................... 3
Applications..................................................................................... 16
ADR430 Electrical Characteristics............................................. 3
ADR431 Electrical Characteristics............................................. 4
ADR433 Electrical Characteristics............................................. 5
ADR434 Electrical Characteristics............................................. 6
ADR435 Electrical Characteristics............................................. 7
ADR439 Electrical Characteristics............................................. 8
Absolute Maximum Ratings............................................................ 9
Package Type ................................................................................. 9
ESD Caution.................................................................................. 9
Typical Performance Characteristics ........................................... 10
Theory of Operation ...................................................................... 15
Basic Voltage Reference Connections...................................... 15
Noise Performance .....................................................................15
Tur n -O n Tim e ............................................................................ 15
Output Adjustment .................................................................... 16
Reference for Converters in Optical Network Control Circuits
Negative Precision Reference without Precision Resistors ... 16
High Voltage Floating Current Source .................................... 17
Kelvin Connections.................................................................... 17
Dual Polarity References ........................................................... 17
Programmable Current Source ................................................ 18
Programmable DAC Reference Voltage.................................. 18
Precision Voltage Reference for Data Converters.................. 19
Precision Boosted Output Regulator....................................... 19
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 21
......................................................................................... 16
REVISION HISTORY
9/04—Data Sheet Changed from Rev. A to Rev. B
Added New Grade ..............................................................Universal
Changes to Specifications................................................................ 3
Replaced Figure 3, Figure 4, Figure 5........................................... 10
Updated Ordering Guide............................................................... 21
6/04—Data Sheet Changed from Rev. 0 to Rev. A
Changes to Format ............................................................. Universal
Changes to the Ordering Guide.................................................... 20
12/03—Revision 0: Initial Version
Rev. B | Page 2 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

SPECIFICATIONS

ADR430 ELECTRICAL CHARACTERISTICS

VIN = 4.1 V to 18 V, I
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade V A Grade V
Initial Accuracy
B Grade V B Grade V A Grade V A Grade V
Temperature Coefficient
SOIC-8 (B Grade) TCV SOIC-8 (A Grade) TCV MSOP-8 TCV
Line Regulation ∆VO/∆V
−40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆I
−40°C < TA < +125°C 15 ppm/mA I
−40°C < TA < +125°C 15 ppm/mA Quiescent Current I Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p Voltage Noise Density e Turn-On Settling Time t Long-Term Stability Output Voltage Hysteresis V Ripple Rejection Ratio RRR fIN = 10 kHz –70 dB Short Circuit to GND I Supply Voltage Operating Range V Supply Voltage Headroom VIN − V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
O
O
OERR
OERR
OERR
OERR
O
O
O
IN
LOAD
IN
N
1
∆V
SC
R
O
O_HYS
IN
O
2.047 2.048 2.049 V
2.045 2.048 2.051 V
1 mV
0.05 % 3 mV
0.15 %
−40°C < TA < +125°C 1 3 ppm/°C
−40°C < TA < +125°C 2 10
−40°C < TA < +125°C 2 10 ppm/°C VIN = 4.1 V to 18 V
I
LOAD
LOAD
No load, −40°C < TA < +125°C 560 800 µA
1 kHz 60 CIN = 0 10 µs 1,000 h 40 ppm 20 ppm
40 mA
4.1 18 V 2 V
= 0 mA to 10 mA, VIN = 5.0 V
= −10 mA to 0 mA, VIN = 5.0 V
nV√
Hz
Rev. B | Page 3 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

ADR431 ELECTRICAL CHARACTERISTICS

VIN = 4.5 V to 18 V, I
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade V A Grade V
Initial Accuracy
B Grade V B Grade V A Grade V A Grade V
Temperature Coefficient
SOIC-8 (B Grade) TCV SOIC-8 (A Grade) TCV MSOP-8 TCV
Line Regulation ∆VO/∆VIN VIN = 4.5 V to 18 V
−40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆I
−40°C < TA < +125°C 15 ppm/mA I
−40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 580 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p Voltage Noise Density e Turn-On Settling Time t Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis V Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 4.5 18 V Supply Voltage Headroom VIN – VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
O
O
OERR
OERR
OERR
0.13 %
OERR
O
O
O
LOAD
N
R
20 ppm
O_HYS
2.499 2.500 2.501 V
2.497 2.500 2.503 V
1 mV
0.04 % 3 mV
−40°C < TA < +125°C 1 3 ppm/°C
−40°C < TA < +125°C 2 10 ppm/°C
−40°C < TA < +125°C 2 10 ppm/°C
I
LOAD
LOAD
1 kHz 80 CIN = 0 10 µs
= 0 mA to 10 mA, VIN = 5.0 V
= −10 mA to 0 mA, VIN = 5.0 V
nV√
Hz
Rev. B | Page 4 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

ADR433 ELECTRICAL CHARACTERISTICS

VIN = 5 V to 18 V, I
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade V A Grade V
Initial Accuracy
B Grade V B Grade V A Grade V A Grade V
Temperature Coefficient TCVO
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
Line Regulation ∆VO/∆VIN VIN = 5 V to 18 V
−40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆I
−40°C < TA < +125°C 15 ppm/mA I
−40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 590 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.75 µV p-p Voltage Noise Density eN 1 kHz 90 Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability Output Voltage Hysteresis V Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 5 18 V Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA , TA = 25°C, unless otherwise noted.
LOAD
O
O
OERR
OERR
OERR
0.13 %
OERR
LOAD
1
∆VO 1,000 h 40 ppm
20 ppm
O_HYS
2.9985 3.000 3.0015 V
2.996 3.000 3.004 V
1.5 mV
0.05 % 4 mV
I
LOAD
LOAD
= 0 mA to 10 mA, VIN = 6 V
= −10 mA to 0 mA, VIN = 6 V
nV√
Hz
Rev. B | Page 5 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

ADR434 ELECTRICAL CHARACTERISTICS

VIN = 6.1 V to 18 V, I
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade VO 4.0945 4.096 4.0975 V A Grade VO 4.091 4.096 4.101 V
Initial Accuracy
B Grade V B Grade V A Grade V A Grade V
Temperature Coefficient TCVO
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
Line Regulation ∆VO/∆VIN VIN = 6.1 V to 18 V
−40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆I
−40°C < TA < +125°C 15 ppm/mA I
−40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 595 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 6.25 µV p-p Voltage Noise Density eN 1 kHz 100 Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis V Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 6.1 18 V Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
1.5 mV
OERR
0.04 %
OERR
5 mV
OERR
0.13 %
OERR
I
LOAD
20 ppm
O_HYS
= 0 mA to 10 mA, VIN = 7 V
LOAD
= −10 mA to 0 mA, VIN = 7 V
LOAD
nV√
Hz
Rev. B | Page 6 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

ADR435 ELECTRICAL CHARACTERISTICS

VIN = 7 V to 18 V, I
Table 6.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade VO 4.998 5.000 5.002 V A Grade VO 4.994 5.000 5.006 V
Initial Accuracy
B Grade V B Grade V A Grade V A Grade V
Temperature Coefficient TCV
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
Line Regulation ∆VO/∆VIN VIN = 7 V to 18 V
−40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆I
−40°C < TA < +125°C 15 ppm/mA I
−40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 620 800 µA Voltage Noise eN p-p 0.1 Hz to 10 Hz 8 µV p-p Voltage Noise Density eN 1 kHz 115 Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis V Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 7 18 V Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mA, TA = 25°C, unless otherwise noted.
LOAD
2 mV
OERR
0.04 %
OERR
6 mV
OERR
0.12 %
OERR
O
LOAD
20 ppm
O_HYS
I
= 0 mA to 10 mA, VIN = 8 V
LOAD
= −10 mA to 0 mA, VIN = 8 V
LOAD
nV/√
Hz
Rev. B | Page 7 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439

ADR439 ELECTRICAL CHARACTERISTICS

VIN = 6.5 V to 18 V, I
Table 7.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
B Grade VO 4.498 4.500 4.502 V A Grade VO 4.4946 4.500 4.5054 V
Initial Accuracy
B Grade V B Grade V A Grade V A Grade V
Temperature Coefficient TCVO
SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C
Line Regulation ∆VO/∆VIN VIN = 6.5 V to 18 V
−40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆I
−40°C < TA < +125°C 15 ppm/mA I
−40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 600 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 7.5 µV p-p Voltage Noise Density eN 1 kHz 110 Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis V Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 6.5 18 V Supply Voltage Headroom VIN − VO 2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
= 0 mV, TA = 25°C, unless otherwise noted.
LOAD
2 mV
OERR
0.04 %
OERR
5.4 mV
OERR
0.12 %
OERR
I
LOAD
20 ppm
O_HYS
= 0 mA to 10 mA, VIN = 6.5 V
LOAD
= −10 mA to 0 mA, VIN = 6.5 V
LOAD
nV/√
Hz
Rev. B | Page 8 of 24
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