FEATURES
Upgrade for ADM690/ADM695, MAX690–MAX695
Specified Over Temperature
Low Power Consumption (0.7 mW)
Precision Voltage Monitor
Reset Assertion Down to 1 V V
Low Switch On-Resistance 0.7 V Normal,
7 V in Backup
High Current Drive (100 mA)
Watchdog Timer—100 ms, 1.6 s, or Adjustable
400 nA Standby Current
Automatic Battery Backup Power Switching
Extremely Fast Gating of Chip Enable Signals (3 ns)
Voltage Monitor for Power Fail
Available in TSSOP Package
APPLICATIONS
Microprocessor Systems
Computers
Controllers
Intelligent Instruments
Automotive Systems
GENERAL DESCRIPTION
The ADM8690–ADM8695 family of supervisory circuits offers
complete single chip solutions for power supply monitoring and
battery control functions in microprocessor systems. These
functions include µP reset, backup battery switchover, watchdog
timer, CMOS RAM write protection and power failure warning.
The complete family provides a variety of configurations to satisfy most microprocessor system requirements.
The ADM8690, ADM8692 and ADM8694 are available in
8-pin DIP packages and provide:
1. Power-on reset output during power-up, power-down and
brownout conditions. The
tional with V
as low as 1 V.
CC
2. Battery backup switching for CMOS RAM, CMOS
microprocessor or other low power logic.
3. A reset pulse if the optional watchdog timer has not been
toggled within a specified time.
4. A 1.3 V threshold detector for power fail warning, low battery
detection or to monitor a power supply other than +5 V.
The ADM8691, ADM8693 and ADM8695 are available in
16-pin DIP and small outline packages (including TSSOP) and
provide three additional functions:
1. Write protection of CMOS RAM or EEPROM.
2. Adjustable reset and watchdog timeout periods.
3. Separate watchdog timeout, backup battery switchover, and
low V
status outputs.
CC
CC
RESET output remains opera-
Supervisory Circuits
ADM8690–ADM8695
FUNCTIONAL BLOCK DIAGRAMS
V
BATT
V
OUT
V
CC
1
4.65V
WATCHDOG
INPUT (WDI)
POWER FAIL
INPUT (PFI)
V
BATT
V
CE
OSC IN
OSC SEL
WATCHDOG
INPUT (WDI)
POWER FAIL
INPUT (PFI)
1
4.40V (ADM8692)
2
200ms (ADM8694)
CC
IN
1
WATCHDOG
TRANSITION DETECTOR
(1.6s)
1.3V
VOLTAGE DETECTOR = 4.65V (ADM8690, ADM8694)
RESET PULSE WIDTH = 50ms (AD8690, ADM8692)
1
4.65V
RESET AND
WATCHDOG
TIMEBASE
WATCHDOG
TRANSITION DETECTOR
1.3V
VOLTAGE DETECTOR = 4.65V (ADM8691, ADM8695)
4.40V (ADM8693)
The ADM8690–ADM8695 family is fabricated using an advanced epitaxial CMOS process combining low power consumption (0.7 mW), extremely fast Chip Enable gating (3 ns)
and high reliability.
RESET assertion is guaranteed with VCC as
low as 1 V. In addition, the power switching circuitry is designed for minimal voltage drop thereby permitting increased
output current drive of up to 100 mA without the need of an
external pass transistor.
GENERATOR
BATT ON
RESET
GENERATOR
RESET
2
ADM8690
ADM8692
ADM8694
ADM8691
ADM8693
ADM8695
WATCHDOG
TIMER
RESET
POWER FAIL
OUTPUT (PFO)
V
OUT
CE
OUT
LOW LINE
RESET
RESET
WATCHDOG
OUTPUT (WDO)
POWER FAIL
OUTPUT (PFO)
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
PFO Short Circuit Source Current1325µAPFI = Low, PFO = 0 V
PFO Short Circuit Sink Current25mAPFI = High, PFO = V
OUT
CHIP ENABLE GATING
CE
Threshold0.8VV
IN
3.0VV
CE
Pull-Up Current3µA
IN
CE
Output Voltage0.4VI
OUT
– 1.5VI
V
OUT
V
– 0.05VI
OUT
IL
IH
= 3.2 mA
SINK
= 3.0 mA
SOURCE
= 1 µA, VCC = 0 V
SOURCE
CE Propagation Delay37ns
MIN
to
–2–
REV. 0
ADM8690–ADM8695
ParameterMinTypMaxUnitsTest Conditions/Comments
OSCILLATOR
OSC IN Input Current±2µA
OSC SEL Input Pull-Up Current5µA
OSC IN Frequency Range0500kHz OSC SEL = 0 V
OSC IN Frequency with External Capacitor4kHz OSC SEL = 0 V, C
NOTE
1
WDI is a three level input which is internally biased to 38% of VCC and has an input impedance of approximately 5 MΩ.
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
ORDERING GUIDE
ModelTemperature RangePackage Options*
ADM8690AN–40°C to +85°CN-8
ADM8690ARN–40°C to +85°CSO-8
ADM8691AN–40°C to +85°CN-16
ADM8691ARN–40°C to +85°CR-16A
ADM8691ARW–40°C to +85°CR-16
ADM8691ARU–40°C to +85°CRU-16
ADM8692AN–40°C to +85°CN-8
ADM8692ARN–40°C to +85°CSO-8
ADM8693AN–40°C to +85°CN-16
ADM8693ARN–40°C to +85°CR-16A
ADM8693ARW–40°C to +85°CR-16
ADM8693ARU–40°C to +85°CRU-16
ADM8694AN–40°C to +85°CN-8
ADM8694ARN–40°C to +85°CSO-8
ADM8695AN–40°C to +85°CN-16
ADM8695ARW–40°C to +85°CR-16
*N = Plastic DIP; R = Small Outline (Wide); R = Small Outline (Narrow);
RU = Thin Shrink Small Outline; SO = Small Outline.
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum ratings for
extended periods of time may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADM8690–ADM8695 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
REV. 0
–3–
WARNING!
ESD SENSITIVE DEVICE
ADM8690–ADM8695
MnemonicFunction
PIN FUNCTION DESCRIPTION
V
V
V
CC
BATT
OUT
Power Supply Input: +5 V Nominal.
Backup Battery Input.
Output Voltage, VCC or V
is internally switched to V
BATT
OUT
can supply up to 100 mA to power CMOS RAM. Connect V
depending on which is at the highest potential. V
to VCC if V
OUT
OUT
and V
are not used.
BATT
OUT
GND0 V. Ground reference for all signals.
RESETLogic Output. RESET goes low if
1. V
falls below the Reset Threshold
CC
2. The watchdog timer is not serviced within its timeout period.
The reset threshold is typically 4.65 V for the ADM8690/ADM8691/ADM8694/ADM8695 and 4.4 V for the ADM8692
and ADM8693.
ADM8695) after V
enabled but not serviced within its timeout period. The
ADM8695 as shown in Table I. The
RESET remains low for 50 ms (ADM8690/ADM8691/ADM8692/ADM8693) or 200 ms (ADM8694/
returns above the threshold. RESET also goes low for 50 (200) ms if the watchdog timer is
CC
RESET pulse width can be adjusted on the ADM8691/ADM8693/
RESET output has an internal 3 µA pull up, and can either connect
to an open collector Reset bus or directly drive a CMOS gate without an external pull-up resistor.
WDIWatchdog Input. WDI is a three level input. If WDI remains either high or low for longer than the watchdog timeout
period,
RESET pulses low and WDO goes low. The timer resets with each transition on the WDI line. The watchdog
timer may be disabled if WDI is left floating or is driven to midsupply.
PFIPower Fail Input. PFI is the noninverting input to the Power Fail Comparator when PFI is less than 1.3 V,
goes low. Connect PFI to GND or V
when not used.
OUT
PFO
PFOPower Fail Output. PFO is the output of the Power Fail Comparator. It goes low when PFI is less than 1.3 V. The
comparator is turned off and
CE
CE
IN
OUT
Logic Input. The input to the CE gating circuit. Connect to GND or V
Logic Output. CE
threshold. If V
OUT
is below the reset threshold, CE
CC
BATT ONLogic Output. BATT ON goes high when V
PFO goes low when VCC is below V
is a gated version of the CEIN signal. CE
is forced high. See Figures 5 and 6.
OUT
is internally switched to the V
OUT
.
BATT
if not used.
OUT
tracks CEIN when VCC is above the reset
OUT
input. It goes low when V
BATT
OUT
is internally switched to VCC. The output typically sinks 35 mA and can directly drive the base of an external
PNP transistor to increase the output current above the 100 mA rating of V
OUT
.
LOW LINELogic Output. LOW LINE goes low when VCC falls below the reset threshold. It returns high as soon as VCC rises
above the reset threshold.
RESETLogic Output. RESET is an active high output. It is the inverse of
RESET.
OSC SELLogic Oscillator Select Input. When OSC SEL is unconnected (floating) or driven high, the internal oscillator sets
the reset active time and watchdog timeout period. When OSC SEL is low, the external oscillator input, OSC IN,
is enabled. OSC SEL has a 3 µA internal pull-up (see Table I).
OSC INOscillator Logic Input. With OSC SEL low, OSC IN can be driven by an external clock signal or an external
capacitor can be connected between OSC IN and GND. This sets both the reset active pulse timing and the watchdog timeout period (see Table I and Figure 4). With OSC SEL high or floating, the internal oscillator is enabled
and the reset active time is fixed at 50 ms typ. (ADM8691/ADM8693) or 200 ms typ (ADM8695). In this mode the
OSC IN pin selects between fast (100 ms) and slow (1.6 s) watchdog timeout periods. In both modes, the timeout
period immediately after a reset is 1.6 s typical.
WDOLogic Output. The Watchdog Output, WDO, goes low if WDI remains either high or low for longer than the
watchdog timeout period.
WDO is set high by the next transition at WDI. If WDI is unconnected or at midsupply,
the watchdog timer is disabled and WDO remains high. WDO also goes high when LOW LINE goes low.
ADM869050 ms4.65 V1.6 sYesNoNo
ADM869150 ms or ADJ4.65 V100 ms, 1.6 s, ADJYesYesYes
ADM869250 ms4.4 V1.6 sYesNoNo
ADM869350 ms or ADJ4.4 V100 ms, 1.6 s, ADJYesYesYes
ADM8694200 ms4.65 V1.6 sYesNoNo
ADM8695200 ms or ADJ4.65 V100 ms, 1.6 s, ADJYesYesYes
CIRCUIT INFORMATION
Battery Switchover Section
The battery switchover circuit compares VCC to the V
input, and connects V
occurs when V
when V
CC
is 50 mV higher than V
CC
is 70 mV greater than V
to whichever is higher. Switchover
OUT
BATT
as VCC falls, and
BATT
as VCC rises. This
20 mV of hysteresis prevents repeated rapid switching if V
BATT
CC
falls very slowly or remains nearly equal to the battery voltage.
If the continuous output current requirement at V
100 mA, or if a lower V
CC–VOUT
voltage differential is desired,
OUT
exceeds
an external PNP pass transistor may be connected in parallel with
the internal transistor. The BATT ON output (ADM8691/
ADM8693/ADM8695) can directly drive the base of the external transistor.
A 7 Ω MOSFET switch connects the V
input to V
BATT
OUT
ing battery backup. This MOSFET has very low input-to-output differential (dropout voltage) at the low current levels
V
V
BATT
CC
GATE DRIVE
100
mV
INTERNAL
SHUTDOWN SIGNAL
700
mV
WHEN
V
BATT
> (VCC + 0.7V)
V
OUT
BATT ON
(ADM8690,
ADM8695)
required for battery back up of CMOS RAM or other low power
CMOS circuitry. The supply current in battery back up is typically 0.4 µA.
The ADM8690/ADM8691/ADM8694/ADM8695 operates with
battery voltages from 2.0 V to 4.25 V, and the ADM8692/
ADM8693 operates with battery voltages from 2.0 V to 4.0 V.
High value capacitors, either standard electrolytic or the farad
size double layer capacitors, can also be used for short-term
memory backup. A small charging current of typically 10 nA
(0.1 µA max) flows out of the V
terminal. This current is
BATT
useful for maintaining rechargeable batteries in a fully charged
condition. This extends the life of the backup battery by com-
Figure 1. Battery Switchover Schematic
During normal operation, with VCC higher than V
internally switched to V
via an internal PMOS transistor
OUT
BATT
, VCC is
switch. This switch has a typical on-resistance of 0.7 Ω and can
supply up to 100 mA at the V
terminal. V
OUT
is normally
OUT
used to drive a RAM memory bank which may require instanta-
pensating for its self discharge current. Also note that this current poses no problem when lithium batteries are used for
backup since the maximum charging current (0.1 µA) is safe for
even the smallest lithium cells.
If the battery switchover section is not used, V
connected to GND and V
should be connected to VCC.
OUT
should be
BATT
neous currents of greater than 100 mA. If this is the case then a
bypass capacitor should be connected to V
. The capacitor
OUT
will provide the peak current transients to the RAM. A capacitance value of 0.1 µF or greater may be used.
dur-
REV. 0
–5–
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