ANALOG DEVICES ADG 712 BRZ Datasheet
CMOS Low Voltage, 4 Ω Quad,
FEATURES
1.8 V to 5.5 V single supply
Low on resistance (2.5 Ω Typ)
Low on resistance flatness
−3 dB bandwidth > 200 MHz
Rail-to-rail operation
16-lead TSSOP and SOIC packages
Fast switching times: t
Typical power consumption (< 0.01 μW)
TTL/CMOS compatible
Qualified for automotive applications
APPLICATIONS
USB 1.1 signal switching circuits
Cell phones
PDAs
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
=16 ns, t
ON
=10 ns
OFF
SPST Switches
ADG711/ADG712/ADG713
FUNCTIONAL BLOCK DIAGRAM
IN1
IN2
IN3
IN4
ADG711
S1
IN1
D1
S2
IN2
D2
S3
D3
S4
D4
SWITCHES SHOWN FOR A LOGIC “1” I NPUT
ADG712
IN3
IN4
Figure 1.
S1
IN1
D1
S2
IN2
D2
S3
D3
S4
D4
ADG713
IN3
IN4
S1
D1
S2
D2
S3
D3
S4
D4
00042-001
GENERAL DESCRIPTION
The ADG711, ADG712, and ADG713 are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation yet gives high switching speed, low
on resistance, low leakage currents, and high bandwidth.
They are designed to operate from a single 1.8 V to 5.5 V supply,
making them ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices,
Inc. Fast switching times and high bandwidth make the parts
suitable for switching USB 1.1 data signals and video signals.
The ADG711, ADG712, and ADG713 contain four independent
single-pole/single-throw (SPST) switches. The ADG711 and
ADG712 differ only in that the digital control logic is inverted. The
ADG711 switches are turned on with a logic low on the appropriate
control input, while a logic high is required to turn on the switches
of the ADG712. The ADG713 contains two switches whose digital
control logic is similar to the ADG711, while the logic is inverted
on the other two switches.
Each switch conducts equally well in both directions when On. The
ADG713 exhibits break-before-make switching action.
The ADG711/ADG712/ADG713 are available in 16-lead TSSOP
and 16-lead SOIC packages.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V Single-Supply Operation.
The ADG711, ADG712, and ADG713 offer high performance
and are fully specified and guaranteed with 3 V and 5 V
supply rails.
2. Ver y L ow R
At supply voltage of 1.8 V, R
temperature range.
3. Low On Resistance Flatness.
4. −3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
ON/tOFF
7. Break-Before-Make Switching.
This prevents channel shorting when the switches are
configured as a multiplexer (ADG713 only).
8. 16-Lead TSSOP and 16-Lead SOIC Packages.
(4.5 Ω maximum at 5 V, 8 Ω maximum at 3 V).
ON
is typically 35 Ω over the
ON
.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2004–2011 Analog Devices, Inc. All rights reserved.
ADG711/ADG712/ADG713
TABLE OF CONTENTS
Features.............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
REVISION HISTORY
6/11—Rev. A to Rev. B
Updated Format..................................................................Universal
Changes to Features Section............................................................ 1
Changes to Absolute Maximum Ratings Table............................. 5
Changes to Ordering Guide.......................................................... 14
Added Automotive Products Section .......................................... 14
3/04—Rev. 0 to Rev. A
Added Applications.......................................................................... 1
Changes to Ordering Guide............................................................ 4
Updated Outline Dimensions....................................................... 10
Pin Configuration and Function Descriptions..............................6
Typical Performance Characteristics..............................................7
Test Circuits........................................................................................9
Terminology.................................................................................... 11
Applications Information.............................................................. 12
Outline Dimensions....................................................................... 13
Ordering Guide .......................................................................... 14
Automotive Products................................................................. 14
Rev. B | Page 2 of 16
ADG711/ADG712/ADG713
SPECIFICATIONS
VDD = +5 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 1.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 2.5 Ω typ VS = 0 V to VDD, IS = −10 mA;
4 4.5 Ω max See Figure 11
On Resistance Match Between 0.05 Ω typ VS = 0 V to VDD, IS = −10 mA
Channels (ΔRON) 0.3 Ω max
On Resistance Flatness (R
1.0 Ω max
LEAKAGE CURRENTS VDD = +5.5 V
Source Off Leakage IS (Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V
±0.1 ±0.2 nA max See Figure 12
Drain Off Leakage ID (Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V
±0.1 ±0.2 nA max See Figure 12
Channel On Leakage ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or 4.5 V
±0.1 ±0.2 nA max See Figure 13
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
0.8 V max
INL
Input Current
I
or I
0.005 μA typ VIN = V
INL
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS1
tON 11 ns typ RL = 300 Ω, CL = 35 pF
16 ns max VS = 3 V; see Figure 14
t
6 ns typ RL = 300 Ω, CL = 35 pF
OFF
10 ns max VS = 3 V; see Figure 14
Break-Before-Make Time Delay, tD 6 ns typ RL = 300 Ω, CL = 35 pF
(ADG713 Only) 1 ns min VS1 = VS2 = 3 V; see Figure 15
Charge Injection 3 pC typ VS = 2 V; RS = 0 Ω, CL = 1 nF; see Figure 16
Off Isolation −58 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−78 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 17
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz; see Figure 18
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 19
CS 10 pF typ
CD 10 pF typ
CD, CS (On) 22 pF typ
POWER REQUIREMENTS VDD = +5.5 V
IDD 0.001 μA typ Digital inputs = 0 V or 5 V
1.0 μ max
1
Guaranteed by design, not subject to production test.
) 0.5 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT(ON)
2.4 V min
or V
INH
INL
Rev. B | Page 3 of 16
ADG711/ADG712/ADG713
VDD = +3 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 5 5.5 Ω typ VS = 0 V to VDD, IS = −10 mA;
8 Ω max See Figure 11
On Resistance Match Between 0.1 Ω typ VS = 0 V to VDD, IS = −10 mA
Channels (ΔRON) 0.3 Ω max
On Resistance Flatness (R
LEAKAGE CURRENTS VDD = +3.3 V
Source Off Leakage IS (Off) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V
±0.1 ±0.2 nA max See Figure 12
Drain Off Leakage ID (Off) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/ 3 V
±0.1 ±0.2 nA max See Figure 12
Channel On Leakage ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or 3 V
±0.1 ±0.2 nA max See Figure 13
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
0.4 V max
INL
Input Current
I
or I
0.005 μA typ VIN = V
INL
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS1
tON 13 ns typ RL = 300 Ω, CL = 35 pF
20 ns max VS = 2 V; see Figure 14
t
7 ns typ RL = 300 Ω, CL = 35 pF
OFF
12 ns max VS = 2 V; see Figure 14
Break-Before-Make Time Delay, tD 7 ns typ RL = 300 Ω, CL = 35 pF
(ADG713 Only) 1 ns min VS1 = VS2 = 2 V; see Figure 15
Charge Injection 3 pC typ VS = 1.5 V; RS = 0 Ω, CL = 1 nF; see Figure 16
Off Isolation −58 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−78 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 17
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz; see Figure 18
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 19
CS 10 pF typ
CD 10 pF typ
CD, CS (On) 22 pF typ
POWER REQUIREMENTS VDD = +3.3 V
IDD 0.001 μA typ Digital inputs = 0 V or 3 V
1.0 μ max
1
Guaranteed by design, not subject to production test.
) 2.5 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT(ON)
2.0 V min
or V
INH
INL
Rev. B | Page 4 of 16
ADG711/ADG712/ADG713
ABSOLUTE MAXIMUM RATINGS
TA = +25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND −0.3 V to +6 V
Analog, Digital Inputs1
Continuous Current, S or D 30 mA
Peak Current, S or D
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
TSSOP Package, Power Dissipation 430 mW
θJA Thermal Impedance 150°C/W
θJC Thermal Impedance 27°C/W
SOIC Package, Power Dissipation 520 mW
θJA Thermal Impedance 125°C/W
θJC Thermal Impedance 42°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Soldering(Pb-Free)
Reflow, Peak Temperature 260(+0/−5)°C
Time at Peak Temperature 20 sec to 40 sec
ESD 2 kV
1
Overvoltages at IN, S or D will be clamped by internal diodes. Currents
should be limited to the maximum ratings given.
−0.3 V to V
30 mA, whichever occurs
first
100 mA (Pulsed at 1 ms,
10% duty cycle maximum)
+0.3 V or
DD
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any
one time.
ESD CAUTION
Rev. B | Page 5 of 16
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