ANALOG DEVICES ADG 419 BRMZ Datasheet

LC2MOS Precision

S

FEATURES

44 V supply maximum ratings
V

to VDD analog signal range

SS

Low on resistance: <35 Ω
Ultralow power dissipation: < 35 μW
Fast transition time: 160 ns maximum
Break-before-make switching action
Plug-in replacement for DG419

APPLICATIONS

Precision test equipment
Precision instrumentation
Battery-powered systems
Sample hold systems

GENERAL DESCRIPTION

The ADG419 is a monolithic CMOS SPDT switch. This switch
is designed on an enhanced LC
power dissipation yet gives high switching speed, low on resistance,
and low leakage currents.

The on resistance profile of the ADG419 is very flat over the full
analog input range, ensuring excellent linearity and low distortion.
The part also exhibits high switching speed and high signal
bandwidth. CMOS construction ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.

Each switch of the ADG419 conducts equally well in both
directions when on and has an input signal range that extends
to the supplies. In the off condition, signal levels up to the
supplies are blocked. The ADG419 exhibits break-before-make
switching action.

2

MOS process that provides low

Mini-DIP Analog Switch

ADG419

FUNCTIONAL BLOCK DIAGRAM

D

1

ADG419

SWITCH SHOWN FOR A

LOGIC 1 INPUT

Figure 1.

PRODUCT HIGHLIGHTS

1. Extended Signal Range.

The ADG419 is fabricated on an enhanced LC
process, giving an increased signal range that extends to
the supply rails.

2. Ultralow Power Dissipation.

3. Low R

4. Single-Supply Operation.

For applications where the analog signal is unipolar, the
ADG419 can be operated from a single rail power supply.
The part is fully specified with a single 12 V power supply
and remains functional with single supplies as low as 5 V.

ON

.

S2

IN

7850-001

2

MOS

Rev. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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rights of third parties that may result from its use. Specifications subject to change without notice. No
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Fax: [phone] ©2009 Analog Devices, Inc. All rights reserved.

ADG419

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Dual Supply ................................................................................... 3

Single Supply ................................................................................. 4

REVISION HISTORY

8/09—Rev. B to Rev. C

Updated Format .................................................................. Universal

Changes to Table 1 ............................................................................ 3

Changes to Table 2 ............................................................................ 4

Updated Outline Dimensions ....................................................... 12

Changes to Ordering Guide .......................................................... 13

Absolute Maximum Ratings ............................................................5

ESD Caution...................................................................................5

Pin Configuration and Function Descriptions ..............................6

Typical Performance Characteristics ..............................................7

Test Circuits ........................................................................................9

Terminology .................................................................................... 11

Outline Dimensions ....................................................................... 12

Ordering Guide .......................................................................... 13

Rev. B | Page 2 of 16

ADG419

SPECIFICATIONS

DUAL SUPPLY

VDD = 15 V ± 10%, VSS = −15 V ± 10%, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

B Version T Version

−40°C to

Parameter1 +25°C

ANALOG SWITCH

Analog Signal Range

V

+85°C

RON 25 25 Ω typ VD = ±12.5 V, IS = −10 mA
35 45 45 35 45 Ω max VDD = +13.5 V, VSS = −13.5 V
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) ±0.1 ±0.1 nA typ

±0.25 ±5 ±15 ±0.25 ±15 nA max

Drain Off Leakage, ID (Off) ±0.1 ±0.1 nA typ

±0.75 ±5 ±30 ±0.75 ±30 nA max

Channel On Leakage, ID, IS (On) ±0.4 ±0.4 nA typ VS = VD = ±15.5 V; see Figure 13
±0.75 ±5 ±30 ±0.75 ±30 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

2.4 2.4 2.4 V min

INH

0.8 0.8 0.8 V max

INL

Input Current

I

or I

±0.005 ±0.005 ±0.005 μA typ VIN = V

INL

INH

±0.5 ±0.5 ±0.5 μA max
DYNAMIC CHARACTERISTICS2

t

160 200 200 145 200 ns max

TRANSITION

Break-Before-Make Time Delay, tD 30 30 ns typ

5 5 ns min

Off Isolation 80 80 dB typ RL = 50 Ω, f = 1 MHz; see Figure 16

Channel-to-Channel Crosstalk 90 70 dB typ RL = 50 Ω, f = 1 MHz; see Figure 17

CS (Off) 6 6 pF typ f = 1 MHz

CD, CS (On) 55 55 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 0.0001 0.0001 μA typ VIN = 0 V or 5 V

1 2.5 2.5 1 2.5 μA max

ISS 0.0001 0.0001 μA typ

1 2.5 2.5 1 2.5 μA max

IL 0.0001 0.0001 μA typ VL = 5.5 V
1 2.5 2.5 1 2.5 μA max

1

Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40°C to
+125°C +25°C

−55°C to
+125°C Unit Test Conditions/Comments

to VDD VSS to VDD

SS

V

= ±15.5 V, VS = ∓15.5 V;

D

see Figure 12

V

= ±15.5 V, VS = ∓15.5 V;

D

see Figure 12

= 300 Ω, CL = 35 pF; VS1 = ±10 V,

R

L

VS2 = ∓10 V; see Figure 14

= 300 Ω, CL = 35 pF;

R

L

= VS2 = ±10 V; see Figure 15

V

S1

INL

or V

INH

Rev. B | Page 3 of 16

ADG419

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

Parameter1 +25°C

B Version T Version

−40°C to
+85°C

−40°C to
+125°C +25°C

−55°C to
+125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to VDD 0 to VDD V

RON 40 40 Ω typ VD = 3 V, 8.5 V, IS = −10 mA
60 70 70 Ω max VDD = 10.8 V
LEAKAGE CURRENT VDD = 13.2 V

Source OFF Leakage, IS (Off) ±0.1 ±0.1 nA typ

±0.25 ±5 ±15 ±0.25 ±15 nA max

Drain OFF Leakage, ID (Off) ±0.1 ±0.1 nA typ

±0.75 ±5 ±30 ±0.75 ±30 nA max

Channel ON Leakage, ID, IS (On) ±0.4 ±0.4 nA typ VS = VD = 12.2 V/1 V; see Figure 13
±0.75 ±5 ±30 ±0.75 ±30 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

2.4 2.4 2.4 V min

INH

0.8 0.8 0.8 V max

INL

Input Current

I

or I

±0.005 ±0.005 ±0.005 μA typ VIN = V

INL

INH

±0.5 ±0.5 ±0.5 μA max
DYNAMIC CHARACTERISTICS2

t

180 250 250 170 250 ns max

TRANSITION

Break-Before-Make Time Delay, tD 60 60 ns typ

Off Isolation 80 80 dB typ RL = 50 Ω, f = 1 MHz; see Figure 16

Channel-to-Channel Crosstalk 90 70 dB typ RL = 50 Ω, f = 1 MHz; see Figure 17

CS (Off) 13 13 pF typ f = 1 MHz

CD, CS (On) 65 65 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V

IDD 0.0001 0.0001 μA typ VIN = 0 V or 5 V

1 2.5 2.5 1 2.5 μA max

IL 0.0001 0.0001 μA typ VL = 5.5 V
1 2.5 2.5 1 2.5 μA max

1

Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.

2

Guaranteed by design, not subject to production test.

= 12.2 V/1 V, VS = 1 V/12.2 V;

V

D

see Figure 12

= 12.2 V/1 V, VS = 1 V/12.2 V;

V

D

see Figure 12

or V

INL

= 300 Ω, CL = 35 pF; VS1 = 0 V/8 V,

R

L

= 8 V/0 V; see Figure 14

V

S2

= 300 Ω, CL = 35 pF;

R

L

V

= VS2 = 8 V; see Figure 15

S1

INH

Rev. B | Page 4 of 16

ADG419

ABSOLUTE MAXIMUM RATINGS

TA= 25°C unless otherwise noted.

Table 3.

Parameter Rating

VDD to VSS 44 V
VDD to GND −0.3 V to +25 V
VSS to GND +0.3 V to −25 V
VL to GND −0.3 V to VDD + 0.3 V
Analog, Digital Inputs1

Continuous Current, S or D 30 mA
Peak Current, S or D (Pulsed at 1 ms,

10% Duty-Cycle Maximum)

Operating Temperature Range

Industrial (B Version) −40°C to +125°C

Extended (T Version) −55°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
CERDIP Package, Power Dissipation 600 mW

θJA, Thermal Impedance 110°C/W

Lead Temperature, Soldering (10 sec) 300°C
PDIP Package, Power Dissipation 400 mW

θJA, Thermal Impedance 100°C/W

Lead Temperature, Soldering (10 sec) 260°C
SOIC Package, Power Dissipation 400 mW

θJA, Thermal Impedance 155°C/W
MSOP Package, Power Dissipation 315 mW

θJA, Thermal Impedance 205°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C

1

Overvoltages at IN, S or D is clamped by internal diodes. Limit current to the

maximum ratings given.

− 2 V to VDD + 2 V

V

SS

or 30 mA, whichever
occurs first

100 mA

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ESD CAUTION

Rev. B | Page 5 of 16