Analog Devices ADF7010 Datasheet

High Performance ISM Band
a
FEATURES Single Chip Low Power UHF Transmitter 902 MHz–928 MHz Frequency Band On-Chip VCO and Fractional-N PLL
2.3 V–3.6 V Supply Voltage Programmable Output Power
–16 dBm to +12 dBm, 0.3 dB Steps Data Rates up to 76.8 kbps Low Current Consumption
28 mA at 8 dBm Output Power-Down Mode (<1 A) 24-Lead TSSOP Package
APPLICATIONS Low Cost Wireless Data Transfer Wireless Metering Remote Control/Security Systems Keyless Entry
ASK/FSK/GFSK Transmitter IC
ADF7010

GENERAL DESCRIPTION

The ADF7010 is a low power OOK/ASK/FSK/GFSK UHF transmitter designed for use in ISM band systems. It contains an integrated VCO and sigma-delta fractional-N PLL. The output power, channel spacing, and output frequency are pro­grammable with four 24-bit registers. The fractional-N PLL enables the user to select any channel frequency within the U.S. 902 MHz–928 MHz band, allowing the use of the ADF7010 in frequency hopping systems.
It is possible to choose from the four different modulation schemes: Binary or Gaussian Frequency Shift Keying (FSK/ GFSK), Amplitude Shift Keying (ASK), or On/Off Keying (OOK). The device also features a crystal compensation register that can provide 1 ppm resolution in the output frequency. Indirect temperature compensation of the crystal can be accom­plished inexpensively using this register.
Control of the four on-chip registers is via a simple 3-wire inter­face. The devices operate with a power supply ranging from
2.3 V to 3.6 V and can be powered down when not in use.
DV
D
GND
TxCLK
TxDATA
DATA
CLK

FUNCTIONAL BLOCK DIAGRAM

C
REG
CPVDDCP
CLK
OSC1
DD
OOK/ASK
FSK/GFSK
LE
OSC2
SERIAL
INTERFACE
CLK
R
FREQUENCY
COMPENSATION
FREQUENCY
CENTER
OUT
PFD/
CHARGE
PUMP
GND
FRACTIONAL N
SIGMA-DELTA
C
VCO
LOCK DETECT
VCO
VCO
OOK/ASK
PA
LDO
REGULATOR
MUXOUT
GND
RF
OUT
RF
GND
C
REG
MUXOUT
R
SET
V
DD
CE
A
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
GND
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
TEST
ADF7010–SPECIFICATIONS
(VDD = 2.3 V to 3.6 V, GND = 0 V, TA = T
1
specifications are at VDD = 3 V, TA = 25C.)
MIN
to T
, unless otherwise noted. Typical
MAX
Parameter Min Typ Max Unit
RF CHARACTERISTICS
Output Frequency Ranges
U.S. ISM Band 902 928 MHz
Phase Frequency Detector Frequency 3.625 20 MHz @ 928 MHz
TRANSMISSION PARAMETERS
Transmit Rate
FSK 0.3 76.8 kbps ASK 0.3 9.6 kbps GFSK 0.3 76.8 kbps
Frequency Shift Keying
FSK Separation
2, 3
1 110 kHz, Using 3.625 MHz PFD
4.88 620 kHz, Using 20 MHz PFD
Gaussian Filter t 0.5
Amplitude Shift Keying Depth 30 dB, Max Output Power 2 dBm On/Off Keying 40 dB Output Power Output Power Variation
Max Power Setting 9 12 dBm, V
11 dBm, V
9.5 dBm, V
= 3.6 V
DD
= 3.0 V
DD
= 2.3 V
DD
Programmable Step Size
–16 dBm to +12 dBm 0.3125 dB
LOGIC INPUTS
V
, Input High Voltage 0.7  V
INH
, Input Low Voltage 0.2  V
V
INL
I
INH/IINL
C
, Input Current 1 mA
, Input Capacitance 10 pF
IN
DD
DD
V V
Control Clock Input 50 MHz
LOGIC OUTPUTS
VOH, Output High Voltage DV
, Output Low Voltage 0.4 V, I
V
OL
CLK CLK
Rise/Fall Time 16 ns, F
OUT
Mark: Space Ratio 50:50
OUT
– 0.4 V, I
DD
= 500 mA
OH
= 500 mA
OL
= 4.8 MHz into 10 pF
CLK
POWER SUPPLIES
Voltage Supply
DV
DD
2.3 3.6 V
Transmit Current Consumption
–20 dBm (0.01 mW) 12 mA –10 dBm (0.1 mW) 15 mA 0 dBm (1 mW) 20 mA +8 dBm (6.3 mW) 28 mA +12 dBm (16 mW) 40 mA
Crystal Oscillator Block Current
Consumption 190 mA Regulator Current Consumption 380 mA Power-Down Mode
Low Power Sleep Mode 0.2 1 mA
REV. 0–2–
Parameter Min Typ Max Unit
PHASE-LOCKED LOOP
VCO Gain 80 MHz/V @ 915 MHz Phase Noise (In-Band) Phase Noise (Out of Band) Spurious 100 kHz Loop BW
Integer Boundary Reference –50 dBc
Harmonics
7
Second Harmonic V
4
5
6
–80 dBc/Hz @ 5 kHz Offset –100 dBc/Hz @ 1 MHz Offset
–55 dBc, 50 kHz Loop
–14 dBc
= 3.0 V –27 –18 dBc
DD
Third Harmonic VDD = 3.0 V –21 –18 dBc All Other Harmonics –35 dBc
REFERENCE INPUT
Crystal Reference 3.625 20 MHz External Oscillator 3.625 40 MHz
Input Level, High Voltage 0.7  V
DD
Input Level, Low Voltage 0.2  V
DD
V V
FREQUENCY COMPENSATION
Pull In Range of Register 1 100 ppm
PA CHARACTERISTICS
RF Output Impedance
High Range Amplifier 16 – j33 W, Z
TIMING INFORMATION
Chip Enabled to Regulator Ready Crystal Oscillator to CLK
OUT
TEMPERATURE RANGE, T
NOTES
1
Operating temperature range is as follows: –40C to +85C.
2
Frequency Deviation = (PFD Frequency Mod Deviation )/212.
3
GFSK Frequency Deviation = (PFD Frequency  2m)/2
4
VDD = 3 V, PFD = 19.2 MHz, PA = 8 dBm
5
VDD = 3 V, Loop Filter BW = 100 kHz
6
Measured >1 MHz away from integer channel. See Successful Design with ADF7010 Transmitter application note.
7
Not production tested. Based on characterization.
Specifications subject to change without notice.
7
50 200 ms
OK 2 ms, 19.2 MHz Xtal
A
–40 +85 C
12
where m = Mod Control.
REF
= 50 W
ADF7010
REV. 0
–3–
ADF7010
(V

TIMING CHARACTERISTICS

Limit at T
to T
Parameter (B Version) Unit Test Conditions/Comments
MIN
t
1
t
2
t
3
t
4
t
5
t
6
Guaranteed by design but not production tested.
10 ns min DATA to CLOCK Setup Time 10 ns min DATA to CLOCK Hold Time 25 ns min CLOCK High Duration 25 ns min CLOCK Low Duration 10 ns min CLOCK to LE Setup Time 20 ns min LE Pulsewidth
MAX
= 3 V 10%, VGND = 0 V, TA = 25C, unless otherwise noted.)
DD
CLOCK
DATA
LE
t
1
DB23 (MSB) DB22 DB2
t
2
Figure 1. Timing Diagram

ABSOLUTE MAXIMUM RATINGS

(TA = 25C, unless otherwise noted.)
1, 2
VDD to GND3 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +4.0 V
VCOVDD, RFVDD, CPVDD to GND . . . . . –0.3 V to +7 V
Digital I/O Voltage to GND . . . . . . –0.3 V to DVDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40C to +85∞C
Storage Temperature Range . . . . . . . . . . . . –65C to +125∞C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125∞C
TSSOP CSP CSP
Thermal Impedance . . . . . . . . . . . . . . 150.4C/W
JA
(Paddle Soldered) . . . . . . . . . . . . . . . . . . . . 122C/W
JA
(Paddle Not Soldered) . . . . . . . . . . . . . . . . . 216C/W
JA
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 235∞C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240∞C
t
3
t
4
DB1
(CONTROL BIT C2)
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
This device is a high performance RF integrated circuit with an ESD rating of <1 kV and it is ESD sensitive. Proper precautions should be taken for handling and assembly.
3
GND = CPGND = RFGND = DGND = AGND = 0 V.
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6

ORDERING GUIDE

Model Temperature Range Package Option
ADF7010BRU –40ºC to +85ºC RU-24 (TSSOP)
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADF7010 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0–4–

PIN CONFIGURATION

ADF7010
R
SET
CPV
CP
GND
CP
OUT
CE
DATA
CLK
TxDATA
TxCLK
MUXOUT
D
GND
DD
LE
1
2
3
4
5
ADF7010
6
TOP VIEW
(Not to Scale)
7
8
9
10
11
12
TSSOP
24
C
REG
23
C
VCO
22
VCO
IN
21
A
GND
20
RF
OUT
19
RF
GND
18
DV
DD
17
TEST
16
VCO
GND
15
OSC1
14
OSC2
13
CLK
OUT

PIN FUNCTION DESCRIPTIONS

Pin No. Mnemonic Function
1R
2 CPV
SET
DD
External Resistor to Set Charge Pump Current and Some Internal Bias Currents. Use 4.7 kW as default:
I
CP MAX
So, with R
95.
=
R
SET
= 4.7 kW, I
SET
CPMAX
= 2.02 mA.
Charge Pump Supply. This should be biased at the same level as RFVDD and DVDD. The pin should be decoupled with a 0.1 mF capacitor as close to the pin as possible.
3CP
4CP
GND
OUT
Charge Pump Ground
Charge Pump Output. This output generates current pulses that are integrated in the loop filter. The integrated current changes the control voltage on the input to the VCO.
5CEChip Enable. A logic low applied to this pin powers down the part. This must be high for the part to
function. This is the only way to power down the regulator circuit.
6 DATA Serial Data Input. The serial data is loaded MSB first with the two LSBs being the control bits.
This is a high impedance CMOS input.
7 CLK Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched
into the 24-bit shift register on the CLK rising edge. This is a high impedance CMOS input.
8LELoad Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one
of the four latches, the latch being selected using the control bits.
9TxDATA Digital data to be transmitted is input on this pin.
10 TxCLK GFSK Only. This clock output is used to synchronize microcontroller data to the TxDATA pin of the
ADF7010. The clock is provided at the same frequency as the data rate.
11 MUXOUT This multiplexer output allows either the digital lock detect (most common), the scaled RF, or the scaled
reference frequency to be accessed externally. Used commonly for system debug. See Function Register Map.
12 D
GND
13 CLK
OUT
Ground Pin for the RF Digital Circuitry
The Divided Down Crystal Reference with 50:50 Mark-Space Ratio. May be used to drive the clock input of a microcontroller. To reduce spurious components in the output spectrum, the sharp edges can be reduced with a series RC. For 4.8 MHz output clock, a series 50 W into 10 pF will reduce spurs to < –50 dBc. Defaults on power-up to divide by 16.
14 OSC2 Oscillator Pin. If a single-ended reference is used (such as a TCXO), it should be applied to this pin.
When using an external signal generator, a 51 W resistor should be tied from this pin to ground. The XOE bit in the R Register should set high when using an external reference.
REV. 0
–5–
ADF7010
PIN FUNCTION DESCRIPTIONS (continued)
Pin No. Mnemonic Function
15 OSC1 Oscillator Pin. For use with crystal reference only. This is three-stated when an external reference oscillator
is used.
16 VCO
GND
17 TEST Input to the RF fractional-N divider. This pin allows the user to connect an external VCO to the part.
18 DV
19 RF
20 RF
21 A
22 VCO
23 C
24 C
DD
GND
OUT
GND
IN
VCO
REG
Voltage Controlled Oscillator Ground
Disabling the internal VCO activates this pin. If the internal VCO is used, this pin should be grounded.
Positive Supply for the Digital Circuitry. This must be between 2.3 V and 3.6 V. Decoupling capacitors to the analog ground plane should be placed as close as possible to this pin.
Ground for Output Stage of Transmitter
The modulated signal is available at this pin. Output power levels are from –16 dBm to +12 dBm. The output should be impedance matched to the desired load using suitable components. See the Output RF Stage section.
Ground Pin for the RF Analog Circuitry
The tuning voltage on this pin determines the output frequency of the Voltage Controlled Oscillator (VCO). The higher the tuning voltage the higher the output frequency.
A 0.22 mF capacitor should be added to reduce noise on VCO bias lines. Tied to C
A 2.2 mF capacitor should be added at C
to reduce regulator noise and improve stability. A
REG
REG
pin.
reduced
capacitor will improve regulator power-on time but may cause higher spurious components.
REV. 0–6–
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