2.7 V to 3.3 V Power Supply
Separate VP Allows Extended Tuning Voltage
Programmable Dual Modulus Prescaler
RF and IF: 8/9, 16/17, 32/33, 64/65
Programmable Charge Pump Currents
3-Wire Serial Interface
Analog and Digital Lock Detect
Fastlock Mode
Power-Down Mode
20-Lead TSSOP and 20-Lead MLF Chip Scale Package
APPLICATIONS
Wireless Handsets (GSM, PCS, DCS, CDMA, WCDMA)
Base Stations for Wireless Radio (GSM, PCS, DCS,
CDMA, WCDMA)
Wireless LANS
Cable TV Tuners (CATV)
Communications Test Equipment
FUNCTIONAL BLOCK DIAGRAM
VDD1VDD2VP1VP2
ADF4212L
12-BIT IF
IF
REF
CLOCK
DATA
IN
IN
LE
OSCILLATOR
PRESCALER
22-BIT
DATA
REGISTER
IF
SDOUT
B-COUNTER
6-BIT IF
A-COUNTER
14-BIT IF
R-COUNTER
14-BIT RF
R-COUNTER
GENERAL DESCRIPTION
The ADF4212L is a dual frequency synthesizer that can be used
to implement local oscillators (LO) in the up-conversion and
down-conversion sections of wireless receivers and transmitters.
It can provide the LO for both the RF and IF sections. It consists of a low noise digital PFD (Phase Frequency Detector), a
precision charge pump, a programmable reference divider,
programmable A and B counters, and a dual modulus prescaler
(P/P + 1). The A (6-bit) and B (12-bit) counters, in conjunction
with the dual modulus prescaler (P/P + 1), implement an N
divider (N = BP + A). In addition, the 14-bit reference counter
(R counter) allows selectable REFIN frequencies at the PFD
input. A complete PLL (Phase-Locked Loop) can be implemented
if the synthesizer is used with external loop filters and VCOs
(Voltage Controlled Oscillators).
Control of all the on-chip registers is via a simple 3-wire interface with 1.8 V compatibility. The devices operate with a power
supply ranging from 2.7 V to 3.3 V and can be powered down
when not in use.
R
SET
IF PHASE
FREQUENCY
DETECTOR
LOCK
DETECT
LOCK
DETECT
IF
RF
REFERENCE
CHARGE
PUMP
IF CURRENT
SETTING
IFCP3 IFCP2 IFCP1
OUTPUT
MUX
RFCP3
RFCP2 RFCP1
REFERENCE
CP
IF
MUXOUT
12-BIT RF
B-COUNTER
RF
IN
RF
PRESCALER
DGND
RF
AGND
6-BIT RF
A-COUNTER
DGNDIFAGND
RF
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
REFIN Input Capacitance1010pF max
REFIN Input Current±100±100µA max
PHASE DETECTOR
Phase Detector Frequency
CHARGE PUMP
ICP Sink/SourceProgrammable, See Table V
High Value55mA typWith R
Low Value625625µA typ
Absolute Accuracy22% typWith R
Range1.5/5.61.5/5.6kΩ min/max
R
SET
Three-State Leakage Current11nA max
I
CP
Sink and Source Current Matching66% typ0.5 V < V
vs. V
I
CP
CP
ICP vs. Temperature22% typVCP = VP/2
LOGIC INPUTS
V
, Input High Voltage1.41.4V min
INH
, Input Low Voltage0.60.6V max
V
INL
I
, Input Current±1±1µA max
INH/IINL
CIN, Input Capacitance1010pF max
LOGIC OUTPUTS
VOH, Output High Voltage1.41.4V minOpen-Drain 1 kΩ Pull-Up to 1.8 V
VOL, Output Low Voltage0.40.4V maxIOL = 500 µA
POWER SUPPLIES
VDD12.7/3.32.7/3.3V min/V max
2V
V
DD
VP1, VP2V
(RF and IF)
I
DD
5
RF Only66mA max5.0 mA Typical
IF Only44mA max2.5 mA Typical
(IP1 + IP2)0.60.6mA typ
I
P
Low Power Sleep Mode11µA typ
NOTES
1
Operating temperature range is as follows: B Version: –40°C to +85°C.
2
The B Chip specifications are given as typical values.
3
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency
less than this value.
4
Guaranteed by design. Sample tested to ensure compliance.
5
TA = 25°C. RF = 1 GHz. Prescaler = 32/33. IF = 500 MHz. Prescaler = 16/17.
Specifications subject to change without notice.
to T
MIN
, unless otherwise noted; dBm referred to 50 .)
MAX
B Chips
)0.2/2.40.2/2.4GHz min/maxFor Operation below F
IN
)100/1000100/1000MHz min/max
IN
3
4
200200MHz max
500 mV/VDDV p-p min/max
DD
7575MHz max
22 % typ0.5 V < VCP < VP – 0.5 V
1V
DD
1/5.5VDD1/5.5V min/V max
DD
1010mA max7.5 mA Typical
(VDD1 = VDD2 = 2.7 V to 3.3 V; VP1, VP2 = VDD to 5.5 V; AGNDRF = DGNDRF =
2
, Use a Square Wave
MIN
DD
= 3 V
DD
AC-Coupled. When DC-Coupled,
0 to V
Max (CMOS Compatible)
DD
= 2.7 kΩ
SET
= 2.7 kΩ
SET
< VP – 0.5 V, 2% typ
CP
1
1
REV. A–2–
SPECIFICATIONS
to T
T
MIN
ParameterB VersionB Chips
NOISE CHARACTERISTICS
RF Phase Noise Floor
Phase Noise Performance
Spurious Signals
NOTES
1
Operating temperature range is as follows: B Version: –40°C to +85°C
2
The B Chip specifications are given as typical values.
3
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider
value). See TPC 14.
4
The phase noise is measured with the EVAL-ADF4210/12/13EB Evaluation Board and the HP8562E Spectrum Analyzer. The spectrum analyzer provides the
REFIN for the synthesizer (f
= 200 kHz; Offset Frequency = 1 kHz; fIF = 540 MHz; N = 2700; Loop B/W = 20 kHz
= 200 kHz; Offset Frequency = 1 kHz; fRF = 900 MHz; N = 4500; Loop B/W = 20 kHz
= 200 kHz; Offset Frequency = 1 kHz; fRF = 1750 MHz; N = 8750; Loop B/W = 20 kHz
= 1 MHz; Offset Frequency = 1 kHz; fRF = 2400 MHz; N = 9800; Loop B/W = 20 kHz
(VDD1 = VDD2 = 2.7 V to 3.3 V; VP1, VP2 = VDD to 5.5 V; AGNDRF = DGNDRF = AGNDIF = DGNDIF = 0 V; TA =
2
UnitTest Conditions/Comments
–170–170dBc/Hz typ@ 25 kHz PFD Frequency
–162–162dBc/Hz typ@ 200 kHz PFD Frequency
@ VCO Output
–89–89dBc/Hz typ@ 1 kHz Offset and 200 kHz PFD Frequency
–87–87dBc/Hz typSee Note 7
–89–89dBc/Hz typSee Note 7
–84–84dBc/Hz typSee Note 7
–87–87dBc/Hz typ@ 1 kHz Offset and 1 MHz PFD Frequency
–88/–90–88/–90dB typ@ 200 kHz/400 kHz and 200 kHz PFD Frequency
–90/–94–90/–94dB typSee Note 7
–90/–94–90/–94dB typSee Note 7
–80/–82–80/–82dB typSee Note 7
–80/–82–80/–82dB typ@ 200 kHz/400 kHz and 200 kHz PFD Frequency
1
ADF4212L
(VDD1 = VDD2 = 2.6 V to 3.3 V; VP1, VP2 = VDD to 5.5 V; AGNDRF = DGNDRF = AGNDIF = DGNDIF = 0 V;
TIMING CHARACTERISTICS*
TA = T
MIN
to T
, unless otherwise noted; dBm referred to 50 .)
MAX
Limit at
T
to T
MIN
MAX
Parameter(B Version)UnitTest Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
6
*Guaranteed by design but not production tested.
Specifications subject to change without notice.
10ns minDATA to CLOCK Setup Time
10ns minDATA to CLOCK Hold Time
25ns minCLOCK High Duration
25ns minCLOCK Low Duration
10ns minCLOCK to LE Setup Time
20ns minLE Pulsewidth
t
t
3
4
CLOCK
t
t
1
2
DATA
DB20 (MSB)DB19DB2
LE
LE
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6
REV. A
Figure 1. Timing Diagram
–3–
ADF4212L
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted.)
1, 2, 3
VDD1 to GND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +3.6 V
V
1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
DD
1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V to +3.6 V
V
P
V
1, VP2 to VDD1, VDD2 . . . . . . . . . . . . . . . . –0.3 V to +3.6 V
P
Digital I/O Voltage to GND . . . . . . . –0.3 V to DV
Analog I/O Voltage to GND . . . . . . . . –0.3 V to V
REFIN, RFIN, IFIN to GND . . . . . . . –0.3 V to V
+ 0.3 V
DD
+ 0.3 V
DD
+ 0.3 V
DD
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
This device is a high performance RF integrated circuit with an ESD rating of
<2 kV, and is ESD sensitive. Proper precautions should be taken for handling and
assembly.
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADF4212L features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
REV. A–4–
PIN CONFIGURATIONS
FL
O
RF
IN
CP
RF
AGND
RF
DGND
RF
1
2
3
4
5
LE
R
SET
AGND
IF
DGND
IF
11
IF
IN
12
13
14
15
1617181920
CP
IF
V
P
2
V
DD
2
V
P
1
V
DD
1
109876
DATA
CLK
MUXOUT
REF
IN
DGND
IF
ADF4212L
TOP VIEW
(NOT TO SCALE)
ADF4212L
LFCSP
VDD1
CP
DGND
RF
AGND
REF
DGND
UXOUT
V
P
RF
RF
RF
FL
1
2
1
3
4
5
IN
6
7
O
8
IN
9
IF
10
TSSOP
ADF4212L
TOP VIEW
(Not To Scale)
20
19
18
17
16
15
14
13
12
11
VDD2
VP2
CP
IF
DGND
IF
IN
AGND
R
SET
LE
DATA
CLK
IF
IF
PIN FUNCTION DESCRIPTION
MnemonicDescription
CP
RF
RF Charge Pump Output. When enabled, this provides ±ICP to the external RF loop filter, which in turn drives the
external RF VCO.
DGND
RF
IN
AGND
FL
O
REF
IN
RF
RF
Digital Ground Pin for the RF Digital Circuitry.
Input to the RF Prescaler. This small signal input is normally ac-coupled from the RF VCO.
Ground Pin for the RF Analog Circuitry.
Multiplexed Output of RF/IF Programmable or Reference Dividers, RF/IF Fastlock Mode. CMOS output.
Reference Input. This is a CMOS input with a nominal threshold of VDD/2 and an equivalent input resistance of
100 kΩ. See Figure 2. This input can be driven from a TTL or CMOS crystal oscillator, or can be ac-coupled.
DGND
IF
Digital Ground Pin for the IF Digital, Interface, and Control Circuitry.
MUXOUTThis multiplexer output allows either the IF/RF lock detect, the scaled RF, the scaled IF, or the scaled reference
frequency to be accessed externally.
CLKSerial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched into the
24-bit shift register on the CLK rising edge. This input is a high impedance CMOS input.
DATASerial Data Input. The serial data is loaded MSB first with the two LSBs being the control bits. This input is a
high impedance CMOS input.
LELoad Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one of the four
latches, the latch being selected using the control bits.
R
SET
AGND
IF
IF
IN
CP
IF
V
2Power Supply for the IF Charge Pump. This should be greater than or equal to VDD2. In systems where VDD2 is 3 V, it
P
Connecting a resistor between this pin and ground sets the maximum RF and IF charge pump output current. The
nominal voltage potential at the R
therefore, with R
= 2.7 kΩ, I
SET
pin is 0.66 V. The relationship between ICP and R
SET
I
CP MAX
= 5 mA for both the RF and IF charge pumps.
CP MAX
13 5.
=
R
SET
SET
is
Ground Pin for the IF Analog Circuitry.
Input to the IF Prescaler. This small signal input is normally ac-coupled from the IF VCO.
Output from the IF Charge Pump. This is normally connected to a loop filter that drives the input to an external VCO.
can be set to 5.5 V and used to drive a VCO with a tuning range up to 5.5 V.
V
2Power Supply for the IF, Digital, and Interface Section. Decoupling capacitors to the ground plane should be
DD
V
DD
V
1Power Supply for the RF Charge Pump. This should be greater than or equal to VDD1. In systems where VDD1 is 3 V, it
P
REV. A
1Power Supply for the RF Section. Decoupling capacitors to the ground plane should be placed as close as possible
placed as close as possible to this pin. V
same potential as V
to this pin. V
can be set to 5.5 V and used to drive a VCO with a tuning range up to 5.5 V.
DD
1.
DD
1 should have a value of between 2.6 V and 3.3 V. VDD1 must have the same potential as VDD2.
2 should have a value of between 2.6 V and 3.3 V. VDD2 must have the