The ADF4116 family of frequency synthesizers can be used
to implement local oscillators in the up-conversion and downconversion sections of wireless receivers and transmitters. They
consist of a low-noise digital PFD (Phase Frequency Detector),
a precision charge pump, a programmable reference divider,
programmable A and B counters and a dual-modulus prescaler
(P/P+1). The A (5-bit) and B (13-bit) counters, in conjunction
with the dual modulus prescaler (P/P+1), implement an N
divider (N = BP+A). In addition, the 14-bit reference counter
(R Counter), allows selectable REFIN frequencies at the PFD
input. A complete PLL (Phase-Locked Loop) can be implemented if the synthesizer is used with an external loop filter and
VCO (Voltage Controlled Oscillator).
Control of all the on-chip registers is via a simple 3-wire interface.
The devices operate with a power supply ranging from 2.7 V to
5.5 V and can be powered down when not in use.
V
CPGND
P
ADF4116/ADF4117/ADF4118
REF
CLK
DATA
RF
RFINB
IN
21-BIT
LE
A
IN
INPUT REGISTER
FROM
FUNCTION LATCH
PRESCALER
P/P +1
E
SD
OUT
N = BP + A
19
14-BIT
R COUNTER
R COUNTER
LATCH
FUNCTION
LATCH
A, B COUNTER
LATCH
13-BIT
B COUNTER
LOAD
LOAD
5-BIT
A COUNTER
14
13
5
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
540 MHz Output–89–89dBc/Hz typ@ 1 kHz Offset and 200 kHz PFD Frequency
10
900 MHz Output–87–87dBc/Hz typNote 15
10
900 MHz Output–90–90dBc/Hz typNote 15
11
836 MHz Output–78–78dBc/Hz typ@ 300 Hz Offset and 30 kHz PFD Frequency
12
1750 MHz Output–85–85dBc/Hz typ@ 1 kHz Offset and 200 kHz PFD Frequency
13
1750 MHz Output–65–65dBc/Hz typ@ 200 Hz Offset and 10 kHz PFD Frequency
ADF4118141960 MHz Output–84–84dBc/Hz typ@ 1 kHz Offset and 200 kHz PFD Frequency
Spurious Signals
ADF41169540 MHz Output–88/–99–88/–99dBc typ@ 200 kHz/400 kHz and 200 kHz PFD Frequency
ADF4117
ADF4118
ADF4117
ADF4118
ADF4118
10
900 MHz Output–90/–104–90/–104dBc typNote 15
10
900 MHz Output–91/–100–91/–100dBc typNote 15
11
836 MHz Output–80/–84–80/–84dBc typ@ 30 kHz/60 kHz and 30 kHz PFD Frequency
12
1750 MHz Output–88/–90–88/–90dBc typ@ 200 kHz/400 kHz and 200 kHz PFD Frequency
13
1750 MHz Output–65/–73–65/–73dBc typ@ 10 kHz/20 kHz and 10 kHz PFD Frequency
ADF4118141960 MHz Output–80/–86–80/–86dBc typ@ 200 kHz/400 kHz and 200 kHz PFD Frequency
NOTES
1
Operating temperature range is as follows: B Version: –40° C to +85°C.
2
The B Chip specifications are given as typical values.
3
This is the maximum operating frequency of the CMOS counters.
4
AVDD = DVDD = 3 V; for AVDD = DVDD = 5 V, use CMOS-compatible levels.
5
Guaranteed by design. Sample tested to ensure compliance.
6
AVDD = DVDD = 3 V; RFIN for ADF4116 = 540 MHz; RFIN for ADF4117, ADF4118 = 900 MHz.
7
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider
value).
8
The phase noise is measured with the EVAL-ADF411xEB Evaluation Board and the HP8562E Spectrum Analyzer. The spectrum analyzer provides the REFIN for
the synthesizer (f
9
f
= 10 MHz; f
REFIN
10
f
= 10 MHz; f
REFIN
11
f
= 10 MHz; f
REFIN
12
f
= 10 MHz; f
REFIN
13
f
= 10 MHz; f
REFIN
14
f
= 10 MHz; f
REFIN
15
Same conditions as above.
Specifications subject to change without notice.
= 10 MHz @ 0 dBm).
REFOUT
= 200 kHz; Offset frequency = 1 kHz; fRF = 540 MHz; N = 2700; Loop B/W = 20 kHz.
PFD
= 200 kHz; Offset frequency = 1 kHz; fRF = 900 MHz; N = 4500; Loop B/W = 20 kHz.
PFD
= 30 kHz; Offset frequency = 300 Hz; fRF = 836 MHz; N = 27867; Loop B/W = 3 kHz.
PFD
= 200 kHz; Offset frequency = 1 kHz; fRF = 1750 MHz; N = 8750; Loop B/W = 20 kHz.
PFD
= 10 kHz; Offset frequency = 200 Hz; fRF = 1750 MHz; N = 175000; Loop B/W = 1 kHz.
PFD
= 200 kHz; Offset frequency = 1 kHz; fRF = 1960 MHz; N = 9800; Loop B/W = 20 kHz.
PFD
TIMING CHARACTERISTICS
Parameter(B Version)UnitTest Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
6
NOTE
1
Guaranteed by design but not production tested.
Specifications subject to change without notice.
7
8
Limit at T
–170–170dBc/Hz typ@ 25 kHz PFD Frequency
–162–162dBc/Hz typ@ 200 kHz PFD Frequency
10ns minDATA to CLOCK Setup Time
10ns minDATA to CLOCK Hold Time
25ns minCLOCK High Duration
25ns minCLOCK Low Duration
10ns minCLOCK to LE Setup Time
20ns minLE Pulsewidth
REV. 0
–3–
ADF4116/ADF4117/ADF4118
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
1, 2
AVDD to GND3 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
AV
to DVDD . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
P
V
to AVDD . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
P
Digital I/O Voltage to GND . . . . . . . . –0.3 V to V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to V
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
This device is a high-performance RF integrated circuit with an ESD rating of
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3
GND = AGND = DGND = 0 V.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).
t
3
t
4
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
6
t
5
LE
Figure 1. Timing Diagram
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the
WARNING!
ADF4116/ADF4117/ADF4118 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
ADF4116BRU–40°C to +85°CThin Shrink Small Outline Package (TSSOP)RU-16
ADF4116BCP–40°C to +85°CChip Scale PackageCP-20
ADF4117BRU–40°C to +85°CThin Shrink Small Outline Package (TSSOP)RU-16
ADF4117BCP–40°C to +85°CChip Scale PackageCP-20
ADF4118BRU–40°C to +85°CThin Shrink Small Outline Package (TSSOP)RU-16
ADF4118BCP–40°C to +85°CChip Scale PackageCP-20
*Contact the factory for chip availability.
–4–
REV. 0
ADF4116/ADF4117/ADF4118
PIN FUNCTION DESCRIPTIONS
Pin No.MnemonicFunction
1FL
O
2CPCharge Pump Output. When enabled, this provides the ±I
3CPGNDCharge Pump Ground. This is the ground return path for the charge pump.
4AGNDAnalog Ground. This is the ground return path for the prescaler.
5RF
6RF
7AV
8REF
BComplementary Input to the RF Prescaler. This point should be decoupled to the ground plane with a
IN
AInput to the RF Prescaler. This small signal input is normally ac-coupled from the VCO.
IN
DD
IN
9DGNDDigital Ground.
10CEChip Enable. A logic low on this pin powers down the device and puts the charge pump output into three-
11CLKSerial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched into
12DATASerial Data Input. The serial data is loaded MSB first with the two LSBs being the control bits. This
13LELoad Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one
14MUXOUTThis multiplexer output allows either the Lock Detect, the scaled RF or the scaled Reference Frequency
15DV
16V
DD
P
Fast Lock Switch Output. This can be used to switch an external resistor to change the loop filter bandwidth. This will speed up locking of the PLL.
to the external loop filter, which in turn drives
CP
the external VCO.
small bypass capacitor, typically 100 pF. See Figure 22.
Analog Power Supply. This may range from 2.7 V to 5.5 V. Decoupling capacitors to the analog ground
plane should be placed as close as possible to this pin. AV
must be the same value as DVDD.
DD
Reference Input. This is a CMOS input with a nominal threshold of VDD/2 and an equivalent input
resistance of 100 kΩ. See Figure 21. The oscillator input can be driven from a TTL or CMOS crystal
oscillator or it can be ac-coupled.
state mode. Taking the pin high will power up the device depending on the status of the power-down bit F2.
the 21-bit shift register on the CLK rising edge. This input is a high impedance CMOS input.
input is a high impedance CMOS input.
of the four latches, the latch being selected using the control bits.
to be accessed externally.
Digital Power Supply. This may range from 2.7 V to 5.5 V. Decoupling capacitors to the digital ground
plane should be placed as close as possible to this pin. DV
must be the same value as AVDD.
DD
Charge Pump Power Supply. This should be greater than or equal to VDD. In systems where VDD is 3 V,
it can be set to 5 V and used to drive a VCO with a tuning range of up to 6 V.
REV. 0
FL
CPGND
AGND
RFINB
RFINA
AV
REF
O
CP
DD
IN
TSSOP
1
2
ADF4116
3
ADF4117
ADF4118
4
TOP VIEW
5
(Not to Scale)
6
7
8
16
15
14
13
12
11
10
9
V
P
DV
DD
MUXOUT
LE
DATA
CLK
CE
DGND
PIN CONFIGURATIONS
–5–
Chip Scale Package
CP
2019181716
1
CPGND
ADF4116
2
AGND
AGND
RF
IN
RF
IN
B
A
3
4
5
6
AVDDAV
ADF4117
ADF4118
TOP VIEW
(Not to Scale)
FLOVPDVDDDV
7
8
9
10
IN
DD
REF
DGND
DGND
DD
15
14
13
12
11
MUXOUT
LE
DATA
CLK
CE
ADF4116/ADF4117/ADF4118
–Typical Performance Characteristics
Table I. S-Parameter Data for the ADF4118 RF Input