3.2 V to 3.6 V power supply
Separate charge pump supply (V
voltage in 3.3 V systems
Programmable, dual-modulus prescaler
8/9, 16/17,
32/33, or 64/65
Programmable charge pump currents
Programmable antibacklash pulse width
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
Loop filter design possible with ADIsimPLL
4 mm × 4 mm, 20-lead chip scale package
APPLICATIONS
Broadband wireless access
Satellite systems
Instrumentation
Wireless LANs
Base stations for wireless radio
) allows extended tuning
P
DV
AV
DD
DD
GENERAL DESCRIPTION
The ADF4108 frequency synthesizer can be used to implement
local oscillators in the upconversion and downconversion
sections of wireless receivers and transmitters. It consists of a
low noise digital PFD (phase frequency detector), a precision
charge pump, a programmable reference divider, programmable
A and B counters, and a dual-modulus prescaler (P/P + 1).
The A (6-bit) and B (13-bit) counters, in conjunction with the
dual-modulus prescaler (P/P + 1), implement an N divider
(N = BP + A). In addition, the 14-bit reference counter (R counter),
allows selectable REF
phase-locked loop (PLL) can be implemented if the synthesizer
is used with an external loop filter and voltage controlled oscillator
(VCO). Its very high bandwidth means that frequency doublers
can be eliminated in many high frequency systems, simplifying
system architecture and reducing cost.
FUNCTIONAL BLOCK DIAGRAM
V
CPGND
P
ADF4108
frequencies at the PFD input. A complete
IN
R
SET
REFERENCE
REF
IN
CLK
DATA
LE
RFINA
B
RF
IN
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Ordering Guide.......................................................... 20
4/06—Revision 0: Initial Version
Rev. A | Page 2 of 20
ADF4108
www.BDTIC.com/ADI
SPECIFICATIONS
AVDD = DVDD = 3.3 V ± 2%, AVDD ≤ VP ≤ 5.5 V, AGND = DGND = CPGND = 0 V, R
T
, unless otherwise noted.
MAX
Table 1.
B Chips2
Parameter B Version
1
(Typ) Unit Test Conditions/Comments
RF CHARACTERISTICS See Figure 11 for input circuit
RF Input Frequency (RFIN) 1.0/8.0 1.0/8.0 GHz min/max For lower frequencies, ensure slew rate (SR) > 320 V/μs
RF Input Sensitivity −5/+5 −5/+5 dBm min/max
Maximum Allowable Prescaler
Output Frequency
3
300 300 MHz max P = 8
325 325 MHz max P = 16
REFIN CHARACTERISTICS
REFIN Input Frequency 20/250 20/250 MHz min/max For f < 20 MHz, ensure SR > 50 V/μs
REFIN Input Sensitivity
4
0.8/VDD 0.8/VDD V p-p min/max Biased at AVDD/2
REFIN Input Capacitance 10 10 pF max
REFIN Input Current ±100 ±100 μA max
PHASE DETECTOR
Phase Detector Frequency
6
104 104 MHz max
CHARGE PUMP Programmable; see Figure 18
ICP Sink/Source
High Value 5 5 mA typ With R
Low Value 625 625 μA typ
Absolute Accuracy 2.5 2.5 % typ With R
R
Range 3.0/11 3.0/11 kΩ typ See Figure 18
SET
ICP Three-State Leakage 1 1 nA typ 1 nA typical; TA = 25°C
Sink and Source Current Matching 2 2 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
ICP vs. VCP 1.5 1.5 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
ICP vs. Temperature 2 2 % typ VCP = VP/2
LOGIC INPUTS
VIH, Input High Voltage 1.4 1.4 V min
VIL, Input Low Voltage 0.6 0.6 V max
I
, I
, Input Current ±1 ±1 μA max
INH
INL
CIN, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage 1.4 1.4 V min Open-drain output chosen; 1 kΩ pull-up resistor to 1.8 V
VOH, Output High Voltage VDD − 0.4 VDD − 0.4 V min CMOS output chosen
IOH, Output High Current 100 100 μA max
VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 μA
POWER SUPPLIES
AVDD 3.2/3.6 3.2/3.6 V min/max
DVDD AVDD AVDD
VP AVDD/5.5 AVDD/5.5 V min/max AVDD ≤ VP ≤ 5.5 V
IDD (AIDD + DIDD)
7
17 17 mA max 15 mA typ
IP 0.4 0.4 mA max TA = 25°C
Power-Down Mode (AIDD + DIDD)810 10 μA typ
−81 −81 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency
Spurious Signals
7900 MHz Output
1
Operating temperature range (B version) is −40°C to +85°C.
2
The B chip specifications are given as typical values.
3
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
4
AVDD = DVDD = 3.3 V.
5
AC coupling ensures AVDD/2 bias.
6
Guaranteed by design. Sample tested to ensure compliance.
7
TA = 25°C; AVDD = DVDD = 3.3 V; P = 32; RFIN = 8 GHz, f
8
TA = 25°C; AVDD = DVDD = 3.3 V; R = 16,383; A = 63; B = 891; P = 32; RFIN = 7.0 GHz.
9
This value can be used to calculate phase noise for any application. Use the formula −219 + 10 log(f
seen at the VCO output. The value given is the lowest noise mode.
10
The phase noise is measured with the EVAL-ADF4108EB1Z evaluation board, with the ZComm CRO8000Z VCO. The spectrum analyzer provides the REFIN for the
synthesizer (f
−82 −82 dBc typ @ 1 MHz offset and 1 MHz PFD frequency
1
(Typ) Unit Test Conditions/Comments
= 200 kHz, REFIN = 10 MHz.
PFD
) + 20 logN to calculate in-band phase noise performance as
PFD
Rev. A | Page 4 of 20
ADF4108
www.BDTIC.com/ADI
TIMING CHARACTERISTICS
AVDD = DVDD = 3.3 V ± 2%, AVDD ≤ VP ≤ 5.5 V, AGND = DGND = CPGND = 0 V, R
T
, unless otherwise noted.
MAX
= 5.1 kΩ, dBm referred to 50 Ω, TA = T
SET
MIN
to
Table 2.
Parameter
1
Limit2 (B Version) Unit Test Conditions/Comments
t1 10 ns min DATA to CLOCK setup time
t2 10 ns min DATA to CLOCK hold time
t3 25 ns min CLOCK high duration
t4 25 ns min CLOCK low duration
t5 10 ns min CLOCK to LE setup time
t6 20 ns min LE pulse width
1
Guaranteed by design but not production tested.
2
Operating temperature range (B Version) is −40°C to +85°C.
t
t
3
4
CLOCK
DATA
DB23 (MSB)
LE
LE
t
t
1
2
DB22
DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6
Figure 2. Timing Diagram
06015-002
Rev. A | Page 5 of 20
ADF4108
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AVDD to GND1 −0.3 V to +3.9 V
AVDD to DVDD −0.3 V to +0.3 V
VP to GND −0.3 V to +5.8 V
VP to AVDD −0.3 V to +5.8 V
Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND −0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND −0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature 150°C
CSP θJA Thermal Impedance
(Paddle Soldered)
Reflow Soldering
Peak Temperature (60 sec) 260°C
Time at Peak Temperature 40 sec
Transistor Count
CMOS 6425
Bipolar 303
1
GND = AGND = DGND = 0 V.
30.4°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
D rating of <2 kV, and it is ESD sensitive. Proper precautions
ES
should be taken for handling and assembly.
ESD CAUTION
Rev. A | Page 6 of 20
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