Analog Devices ADF4106 a Datasheet

ADF4106

FEATURES

6.0 GHz Bandwidth
2.7 V to 3.3 V Power Supply Separate Charge Pump Supply (V
) Allows Extended
P
Tuning Voltage in 3 V Systems
Programmable Dual-Modulus Prescaler
8/9, 16/17, 32/33, 64/65 Programmable Charge Pump Currents Programmable Antibacklash Pulsewidth 3-Wire Serial Interface Analog and Digital Lock Detect Hardware and Software Power-Down Modes
APPLICATIONS Broadband Wireless Access Instrumentation Wireless LANs Base Stations for Wireless Radio

FUNCTIONAL BLOCK DIAGRAM

AV
DV
DD
DD
REF
IN
14-BIT
R COUNTER
14

GENERAL DESCRIPTION

The ADF4106 frequency synthesizer can be used to implement local oscillators in the upconversion and downconversion sections of wireless receivers and transmitters. It consists of a low noise digital PFD (phase frequency detector), a precision charge pump, a programmable reference divider, programmable A and B counters, and a dual-modulus prescaler (P/P + 1). The A (6-bit) and B (13-bit) counters, in conjunction with the dual-modulus prescaler (P/P + 1), implement an N divider (N = BP + A). In addition, the 14-bit reference counter (R counter) allows selectable
frequencies at the PFD input. A complete PLL (phase-
REF
IN
locked loop) can be implemented if the synthesizer is used with an external loop filter and VCO (voltage controlled oscillator). Its very high bandwidth means that frequency doublers can be eliminated in many high frequency systems, simplifying system architecture and lowering cost.
V
P
PHASE
FREQUENCY
DETECTOR
CPGND
REFERENCE
CHARGE
PUMP
R
SET
CP
R COUNTER
LATCH
CLK
DATA
LE
RFINA
RF
B
IN
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
24-BIT INPUT
REGISTER
FUNCTION
PRESCALER
FROM
LATCH
P/P + 1
CE
22
N = BP + A
AGND
FUNCTION
LATCH
AB COUNTER
LATCH
B COUNTER
LOAD
LOAD
A COUNTER
DGND
13
13-BIT
6-BIT
registered trademarks are the property of their respective companies.
LOCK
DETECT
19
CURRENT
SETTING 1
CPI3 CPI2 CPI1 CPI6 CPI5 CPI4
AV
SD
DD
OUT
MUX
M3 M2 M1
CURRENT
SETTING 2
HIGH Z
MUXOUT
ADF4106
6
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
ADF4106–SPECIFICATIONS
(AV
= DVDD = 3 V 10%; AVDD VP 5.5 V; AGND = DGND = CPGND = 0 V;
DD
1
R
= 5.1 k; dBm referred to 50 ; TA = T
SET
MIN
to T
, unless otherwise noted.)
MAX
BChips
2
Parameter B Version1(Typ) Unit Test Conditions/Comments
RF CHARACTERISTICS See Figure 3 for Input Circuit
RF Input Frequency (RFIN)
3
0.5/6.0 0.5/6.0 GHz min/max RF Input Sensitivity –10/0 10/0 dBm min/max Maximum Allowable Prescaler Output Frequency
REF
CHARACTERISTICS
IN
Input Frequency 20/250 20/250 MHz min/max For f < 20 MHz, Use DC-Coupled
REF
IN
Input Sensitivity
REF
IN
REF
Input Capacitance 10 10 pF max
IN
4
5
300 300 MHz max
0.8/AV
DD
0.8/AV
V p-p min/max AC-Coupled; When DC-Coupled,
DD
Square Wave (0 to V
0 to V
max (CMOS Compatible)
DD
DD
)
REFIN Input Current ± 100 ± 100 µA max
PHASE DETECTOR
Phase Detector Frequency
6
56 56 MHz max
CHARGE PUMP
I
Sink/Source Programmable, See Table V
CP
High Value 5 5 mA typ With R
= 5.1 k
SET
Low Value 625 625 µA typ Absolute Accuracy 2.5 2.5 % typ With R
Range 2.7/10 2.7/10 k typ See Table V
R
SET
Three-State Leakage Current 1 1 nA typ
I
CP
Sink and Source Current Matching 2 2 % typ 0.5 V ⱕ V I
CP
vs. V
CP
1.5 1.5 % typ 0.5 V ⱕ VCP VP – 0.5 V
= 5.1 k
SET
VP – 0.5 V
CP
ICP vs. Temperature 2 2 % typ VCP = VP/2
LOGIC INPUTS
V
, Input High Voltage 1.4 1.4 V min
INH
, Input Low Voltage 0.6 0.6 V max
V
INL
I
, Input Current ± 1 ±1 µA max
INH/IINL
CIN, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage 1.4 1.4 V min Open-Drain Output Chosen 1 k
Pull-up to 1.8 V
, Output High Voltage V
V
OH
I
OH
– 0.4 V
DD
– 0.4 V min CMOS Output Chosen
DD
100 100 µA max
VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 µA
POWER SUPPLIES
AV
DD
DV
DD
V
P
7
(AIDD + DIDD)1513mA max 13 mA typ
I
DD
I
P
2.7/3.3 2.7/3.3 V min/V max
AV
DD
AV
DD
AVDD/5.5 AVDD/5.5 V min/V max AVDD VP 5.5 V
0.4 0.4 mA max TA = 25°C Power-Down Mode8 (AIDD + DIDD)10 10 µA typ
REV. A–2–
ADF4106
BChips
2
Parameter B Version1(Typ) Unit Test Conditions/Comments
NOISE CHARACTERISTICS
ADF4106 Phase Noise Floor
9
174 174 dBc/Hz typ @ 25 kHz PFD Frequency166 166 dBc/Hz typ @ 200 kHz PFD Frequency
Phase Noise Performance
900 MHz Output 5800 MHz Output 5800 MHz Output
Spurious Signals
900 MHz Output 5800 MHz Output 5800 MHz Output
NOTES
1
Operating temperature range (B Version) is –40°C to +85°C.
2
The BChip specifications are given as typical values.
3
Use a square wave for lower frequencies, below the mimimum stated.
4
The maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency
that is less than this value.
5
AVDD = DVDD = 3 V.
6
Guaranteed by design. Sample tested to ensure compliance.
7
TA = 25°C; AVDD = DVDD = 3 V; P = 16; RFIN = 6.0 GHz.
8
TA = 25°C; AVDD = DVDD = 3.3 V; R = 16383; A = 63; B = 891; P = 32; RFIN = 6.0 GHz.
9
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider value).
10
The phase noise is measured with the EVAL-ADF4106EB1 evaluation board and the HP8562E spectrum analyzer. The spectrum analyzer provides the REFIN for
the synthesizer (f
11
f
= 10 MHz; f
REFIN
12
f
= 10 MHz; f
REFIN
13
f
= 10 MHz; f
REFIN
Specifications subject to change without notice.
= 10 MHz @ 0 dBm).
REFOUT
= 200 kHz; Offset Frequency = 1 kHz; fRF = 900 MHz; N = 4500; Loop B/W = 20 kHz.
PFD
= 200 kHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 29000; Loop B/W = 20 kHz.
PFD
= 1 MHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 5800; Loop B/W = 100 kHz.
PFD
10
11
12
13
11
12
13
–159 –159 dBc/Hz typ @ 1 MHz PFD Frequency
@ VCO Output
93 93 dBc/Hz typ @ 1 kHz Offset and 200 kHz PFD Frequency74 74 dBc/Hz typ @ 1 kHz Offset and 200 kHz PFD Frequency84 84 dBc/Hz typ @ 1 kHz Offset and 1 MHz PFD Frequency
90/92 90/92 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD Frequency65/70 65/70 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD Frequency70/75 70/75 dBc typ @ 1 MHz/2 MHz and 1 MHz PFD Frequency
(AV

TIMING CHARACTERISTICS

= DVDD = 3 V 10%; AVDD VP 5.5 V; AGND = DGND = CPGND = 0 V; R
DD
TA = T
MIN
to T
, unless otherwise noted.)
MAX
= 5.1 k;
SET
Limit at
to T
T
MIN
MAX
Parameter (B Version) Unit Test Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
6
NOTES Guaranteed by design but not production tested. Specifications subject to change without notice.
10 ns min DATA to CLOCK Setup Time 10 ns min DATA to CLOCK Hold Time 25 ns min CLOCK High Duration 25 ns min CLOCK Low Duration 10 ns min CLOCK to LE Setup Time 20 ns min LE Pulsewidth
t
t
3
4
CLOCK
DATA
LE
LE
DB23 (MSB)
t
t
2
1
DB22
DB2
DB1 (CONTROL
BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6
REV. A
Figure 1. Timing Diagram
–3–
ADF4106

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, unless otherwise noted.)
1, 2
AVDD to GND3 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +3.6 V
AV
to DVDD . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
V
P
to AVDD . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
V
P
Digital I/O Voltage to GND . . . . . . . . –0.3 V to V
+ 0.3 V
DD
Analog I/O Voltage to GND . . . . . . . . . . –0.3 V to VP + 0.3 V
, RFINA, RFINB to GND . . . . . . –0.3 V to VDD + 0.3 V
REF
IN
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 150°C
TSSOP
Thermal Impedance . . . . . . . . . . . . . . 150.4°C/W
JA

ORDERING GUIDE

Model Temperature Range Package Option*
ADF4106BRU –40°C to +85°C RU-16 ADF4106BRU-REEL –40°C to +85°C RU-16 ADF4106BRU-REEL7 –40°C to +85°C RU-16 ADF4106BCP –40°C to +85°C CP-20 ADF4106BCP-REEL –40°C to +85°C CP-20 ADF4106BCP-REEL7 –40°C to +85°C CP-20 EVAL-ADF4106EB1
*RU = Thin Shrink Small Outline Package (TSSOP).
CP = Lead Frame Chip Scale Package (LFCSP). Contact the factory for chip availability. Note that aluminum bond wire should not be used with the ADF4106 die.
LFCSP JA Thermal Impedance . . . . . . . . . . . . . . . . 122°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
This device is a high performance RF integrated circuit with an ESD rating of <2 kV, and it is ESD sensitive. Proper precautions should be taken for handling and assembly.
3
GND = AGND = DGND = 0 V.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADF4106 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. A–4–

PIN CONFIGURATIONS

ADF4106
R
SET
CP
CPGND
AGND
RF
IN
RF
IN
AV
DD
REF
1
2
3
4
5
B
6
A
7
8
IN
TSSOP
ADF4106
TOP VIEW
(Not to Scale)
16
V
P
15
DV
DD
14
MUXOUT
13
LE
12
DATA
11
CLK
10
CE
9
DGND
NOTE: TRANSISTOR COUNT 6425 (CMOS), 303 (BIPOLAR)
CPGND 1
AGND 2 AGND 3 RFINB 4
A 5
RF
IN
LFCSP
SET
20 CP
19 R
18 VP17 DVDD16 DV
PIN 1 INDICATOR
ADF4106
TOP VIEW
6
7
8
IN
DD
DD
AV
AV
REF
DD
DGND 9
DGND 10
15 MUXOUT 14 LE 13 DATA 12 CLK 11 CE

PIN FUNCTION DESCRIPTIONS

Mnemonic Function
R
SET
CP Charge Pump Output. When enabled, this provides ±I
Connecting a resistor between this pin and CPGND sets the maximum charge pump output current. The nominal voltage potential at the R
So, with R
= 5.1 k, I
SET
pin is 0.6 V. The relationship between ICP and R
SET
25 5.
=
R
SET
to the external loop filter, which in turn drives the
CP
CP MAX
I
CP MAX
= 5 mA.
SET
is
external VCO. CPGND Charge Pump Ground. This is the ground return path for the charge pump. AGND Analog Ground. This is the ground return path of the prescaler. RF
BComplementary Input to the RF Prescaler. This point must be decoupled to the ground plane with a small bypass
IN
capacitor, typically 100 pF. See Figure 3. RF
A Input to the RF Prescaler. This small signal input is ac-coupled to the external VCO.
IN
AV
REF
DD
IN
Analog Power Supply. This may range from 2.7 V to 3.3 V. Decoupling capacitors to the analog ground plane
should be placed as close as possible to this pin. AV
must be the same value as DVDD.
DD
Reference Input. This is a CMOS input with a nominal threshold of VDD/2 and a dc equivalent input resistance of
100 k. See Figure 2. This input can be driven from a TTL or CMOS crystal oscillator, or it can be ac-coupled. DGND Digital Ground. CE Chip Enable. A logic low on this pin powers down the device and puts the charge pump output into three-state
mode. Taking the pin high powers up the device, depending on the status of the power-down bit F2. CLK Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched into the
24-bit shift register on the CLK rising edge. This input is a high impedance CMOS input. DATA Serial Data Input. The serial data is loaded MSB first with the 2 LSB being the control bits. This input is a
high impedance CMOS input. LE Load Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one of the four
latches, the latch being selected using the control bits. MUXOUT This multiplexer output allows either the lock detect, the scaled RF, or the scaled reference frequency to be
accessed externally. DV
V
P
DD
Digital Power Supply. This may range from 2.7 V to 3.3 V. Decoupling capacitors to the digital ground plane
should be placed as close as possible to this pin. DV
must be the same value as AVDD.
DD
Charge Pump Power Supply. This should be greater than or equal to VDD. In systems where VDD is 3 V, it can be
set to 5 V and used to drive a VCO with a tuning range of up to 5 V.
REV. A
–5–
ADF4106–Typical Performance Characteristics
FREQ UNIT – GHz PARAM TYPE – S DATA FORMAT – MA
FREQ MAGS11 ANGS11
0.500 0.89148 –17.2820
0.600 0.88133 – 20.6919
0.700 0.87152 – 24.5386
0.800 0.85855 –27.3228
0.900 0.84911 –31.0698
1.000 0.83512 – 34.8623
1.100 0.82374 –38.5574
1.200 0.80871 –41.9093
1.300 0.79176 – 45.6990
1.400 0.77205 –49.4185
1.500 0.75696 –52.8898
1.600 0.74234 –56.2923
1.700 0.72239 – 60.2584
1.800 0.69419 – 63.1446
1.900 0.67288 – 65.6464
2.000 0.66227 – 68.0742
2.100 0.64758 – 71.3530
2.200 0.62454 – 75.5658
2.300 0.59466 – 79.6404
2.400 0.55932 – 82.8246
2.500 0.52256 – 85.2795
2.600 0.48754 – 85.6298
2.700 0.46411 – 86.1854
2.800 0.45776 – 86.4997
2.900 0.44859 – 88.8080
3.000 0.44588 –91.9737
3.100 0.43810 –95.4087
3.200 0.43269 –99.1282
KEYWORD – R IMPEDANCE  – 50
FREQ MAGS11 ANGS11
3.300 0.42777 – 102.748
3.400 0.42859 – 107.167
3.500 0.43365 – 111.883
3.600 0.43849 – 117.548
3.700 0.44475 – 123.856
3.800 0.44800 – 130.399
3.900 0.45223 – 136.744
4.000 0.45555 – 142.766
4.100 0.45313 – 149.269
4.200 0.45622 –154.884
4.300 0.45555 –159.680
4.400 0.46108 – 164.916
4.500 0.45325 –168.452
4.600 0.45054 –173.462
4.700 0.45200 –176.697
4.800 0.45043 178.824
4.900 0.45282 174.947
5.000 0.44287 170.237
5.100 0.44909 166.617
5.200 0.44294 162.786
5.300 0.44558 158.766
5.400 0.45417 153.195
5.500 0.46038 147.721
5.600 0.47128 139.760
5.700 0.47439 132.657
5.800 0.48604 125.782
5.900 0.50637 121.110
6.000 0.52172 115.400
TPC 1. S-Parameter Data for the RF Input
0
–5
–10
–15
–20
OUTPUT POWER – dB
–25
TA = +25C
TA = +85C
TA = –40C
–30
01
246
3
5
RF INPUT FREQUENCY – GHz
TPC 2. Input Sensitivity
VDD = 3V V
= 3V
P
–40
–50
–60
10dB/DIV RL = –40dBc/Hz
RMS NOISE = 0.36
–70
–80
–90
–100
–110
PHASE NOISE – dBc/Hz
–120
–130
–140
100Hz 1MHz
FREQUENCY OFFSET FROM 900MHz CARRIER
TPC 4. Integrated Phase Noise (900 MHz, 200 kHz, and 20 kHz)
0
REF LEVEL = –14.0dBm
–10
–20
–30
–40
VDD = 3V, VP = 5V I
= 5mA
CP
PFD FREQUENCY = 200kHz LOOP BANDWIDTH = 20kHz RES BANDWIDTH = 1kHz VIDEO BANDWIDTH = 1kHz SWEEP = 2.5 SECONDS AVERAGES = 30
–50
–60
–70
OUTPUT POWER – dB
–80
–91.0dBc/Hz
–90
–100
–400kHz
400kHz900MHz–200kHz 200kHz
FREQUENCY
TPC 5. Reference Spurs (900 MHz, 200 kHz, and 20 kHz)
0
REF LEVEL = –14.3dBm
–10
–20
–30
–40
VDD = 3V, VP = 5V I
= 5mA
CP
PFD FREQUENCY = 200kHz LOOP BANDWIDTH = 20kHz RES BANDWIDTH = 10Hz VIDEO BANDWIDTH = 10Hz SWEEP = 1.9 SECONDS AVERAGES = 10
–50
–60
–70
OUTPUT POWER – dB
–93.0dBc/Hz
–80
–90
–100
–2kHz
2kHz900MHz–1kHz 1kHz
FREQUENCY
TPC 3. Phase Noise (900 MHz, 200 kHz, and 20 kHz)
0
REF LEVEL = –10dBm
–10
–20
–30
–40
VDD = 3V, VP = 5V I
= 5mA
CP
PFD FREQUENCY = 1MHz LOOP BANDWIDTH = 100kHz RES BANDWIDTH = 10Hz VIDEO BANDWIDTH = 10Hz SWEEP = 1.9 SECONDS AVERAGES = 10
–50
–60
–70
OUTPUT POWER – dB
–80
–84.0dBc/Hz
–90
–100
–2kHz
2kHz5800MHz–1kHz 1kHz
FREQUENCY
TPC 6. Phase Noise (5.8 GHz, 1 MHz, and 100 kHz)
REV. A–6–
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