2.7 V to 3.3 V Power Supply
Separate Charge Pump Supply (V
) Allows Extended
P
Tuning Voltage in 3 V Systems
Programmable Dual-Modulus Prescaler
8/9, 16/17, 32/33, 64/65
Programmable Charge Pump Currents
Programmable Antibacklash Pulsewidth
3-Wire Serial Interface
Analog and Digital Lock Detect
Hardware and Software Power-Down Modes
APPLICATIONS
Broadband Wireless Access
Instrumentation
Wireless LANs
Base Stations for Wireless Radio
FUNCTIONAL BLOCK DIAGRAM
AV
DV
DD
DD
REF
IN
14-BIT
R COUNTER
14
GENERAL DESCRIPTION
The ADF4106 frequency synthesizer can be used to implement
local oscillators in the upconversion and downconversion sections
of wireless receivers and transmitters. It consists of a low noise
digital PFD (phase frequency detector), a precision charge pump,
a programmable reference divider, programmable A and B
counters, and a dual-modulus prescaler (P/P + 1). The A (6-bit)
and B (13-bit) counters, in conjunction with the dual-modulus
prescaler (P/P + 1), implement an N divider (N = BP + A). In
addition, the 14-bit reference counter (R counter) allows selectable
frequencies at the PFD input. A complete PLL (phase-
REF
IN
locked loop) can be implemented if the synthesizer is used with
an external loop filter and VCO (voltage controlled oscillator).
Its very high bandwidth means that frequency doublers can be
eliminated in many high frequency systems, simplifying system
architecture and lowering cost.
V
P
PHASE
FREQUENCY
DETECTOR
CPGND
REFERENCE
CHARGE
PUMP
R
SET
CP
R COUNTER
LATCH
CLK
DATA
LE
RFINA
RF
B
IN
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
24-BIT INPUT
REGISTER
FUNCTION
PRESCALER
FROM
LATCH
P/P + 1
CE
22
N = BP + A
AGND
FUNCTION
LATCH
AB COUNTER
LATCH
B COUNTER
LOAD
LOAD
A COUNTER
DGND
13
13-BIT
6-BIT
registered trademarks are the property of their respective companies.
–174–174dBc/Hz typ@ 25 kHz PFD Frequency
–166–166dBc/Hz typ@ 200 kHz PFD Frequency
Phase Noise Performance
900 MHz Output
5800 MHz Output
5800 MHz Output
Spurious Signals
900 MHz Output
5800 MHz Output
5800 MHz Output
NOTES
1
Operating temperature range (B Version) is –40°C to +85°C.
2
The BChip specifications are given as typical values.
3
Use a square wave for lower frequencies, below the mimimum stated.
4
The maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency
that is less than this value.
5
AVDD = DVDD = 3 V.
6
Guaranteed by design. Sample tested to ensure compliance.
7
TA = 25°C; AVDD = DVDD = 3 V; P = 16; RFIN = 6.0 GHz.
8
TA = 25°C; AVDD = DVDD = 3.3 V; R = 16383; A = 63; B = 891; P = 32; RFIN = 6.0 GHz.
9
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider value).
10
The phase noise is measured with the EVAL-ADF4106EB1 evaluation board and the HP8562E spectrum analyzer. The spectrum analyzer provides the REFIN for
the synthesizer (f
11
f
= 10 MHz; f
REFIN
12
f
= 10 MHz; f
REFIN
13
f
= 10 MHz; f
REFIN
Specifications subject to change without notice.
= 10 MHz @ 0 dBm).
REFOUT
= 200 kHz; Offset Frequency = 1 kHz; fRF = 900 MHz; N = 4500; Loop B/W = 20 kHz.
PFD
= 200 kHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 29000; Loop B/W = 20 kHz.
PFD
= 1 MHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 5800; Loop B/W = 100 kHz.
PFD
10
11
12
13
11
12
13
–159–159dBc/Hz typ@ 1 MHz PFD Frequency
@ VCO Output
–93–93dBc/Hz typ@ 1 kHz Offset and 200 kHz PFD Frequency
–74–74dBc/Hz typ@ 1 kHz Offset and 200 kHz PFD Frequency
–84–84dBc/Hz typ@ 1 kHz Offset and 1 MHz PFD Frequency
–90/–92–90/–92dBc typ@ 200 kHz/400 kHz and 200 kHz PFD Frequency
–65/–70–65/–70dBc typ@ 200 kHz/400 kHz and 200 kHz PFD Frequency
–70/–75–70/–75dBc typ@ 1 MHz/2 MHz and 1 MHz PFD Frequency
NOTES
Guaranteed by design but not production tested.
Specifications subject to change without notice.
10ns minDATA to CLOCK Setup Time
10ns minDATA to CLOCK Hold Time
25ns minCLOCK High Duration
25ns minCLOCK Low Duration
10ns minCLOCK to LE Setup Time
20ns minLE Pulsewidth
t
t
3
4
CLOCK
DATA
LE
LE
DB23 (MSB)
t
t
2
1
DB22
DB2
DB1 (CONTROL
BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6
REV. A
Figure 1. Timing Diagram
–3–
ADF4106
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted.)
1, 2
AVDD to GND3 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +3.6 V
AV
to DVDD . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
V
P
to AVDD . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
V
P
Digital I/O Voltage to GND . . . . . . . . –0.3 V to V
+ 0.3 V
DD
Analog I/O Voltage to GND . . . . . . . . . . –0.3 V to VP + 0.3 V
, RFINA, RFINB to GND . . . . . . –0.3 V to VDD + 0.3 V
ADF4106BRU–40°C to +85°CRU-16
ADF4106BRU-REEL–40°C to +85°CRU-16
ADF4106BRU-REEL7–40°C to +85°CRU-16
ADF4106BCP–40°C to +85°CCP-20
ADF4106BCP-REEL–40°C to +85°CCP-20
ADF4106BCP-REEL7–40°C to +85°CCP-20
EVAL-ADF4106EB1
*RU = Thin Shrink Small Outline Package (TSSOP).
CP = Lead Frame Chip Scale Package (LFCSP).
Contact the factory for chip availability.
Note that aluminum bond wire should not be used with the ADF4106 die.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
This device is a high performance RF integrated circuit with an ESD rating of
<2 kV, and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3
GND = AGND = DGND = 0 V.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADF4106 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
REV. A–4–
PIN CONFIGURATIONS
ADF4106
R
SET
CP
CPGND
AGND
RF
IN
RF
IN
AV
DD
REF
1
2
3
4
5
B
6
A
7
8
IN
TSSOP
ADF4106
TOP VIEW
(Not to Scale)
16
V
P
15
DV
DD
14
MUXOUT
13
LE
12
DATA
11
CLK
10
CE
9
DGND
NOTE: TRANSISTOR COUNT 6425 (CMOS), 303 (BIPOLAR)
CPGND 1
AGND 2
AGND 3
RFINB 4
A 5
RF
IN
LFCSP
SET
20 CP
19 R
18 VP17 DVDD16 DV
PIN 1
INDICATOR
ADF4106
TOP VIEW
6
7
8
IN
DD
DD
AV
AV
REF
DD
DGND 9
DGND 10
15 MUXOUT
14 LE
13 DATA
12 CLK
11 CE
PIN FUNCTION DESCRIPTIONS
MnemonicFunction
R
SET
CPCharge Pump Output. When enabled, this provides ±I
Connecting a resistor between this pin and CPGND sets the maximum charge pump output current. The nominal
voltage potential at the R
So, with R
= 5.1 kΩ, I
SET
pin is 0.6 V. The relationship between ICP and R
SET
25 5.
=
R
SET
to the external loop filter, which in turn drives the
CP
CP MAX
I
CP MAX
= 5 mA.
SET
is
external VCO.
CPGNDCharge Pump Ground. This is the ground return path for the charge pump.
AGNDAnalog Ground. This is the ground return path of the prescaler.
RF
BComplementary Input to the RF Prescaler. This point must be decoupled to the ground plane with a small bypass
IN
capacitor, typically 100 pF. See Figure 3.
RF
AInput to the RF Prescaler. This small signal input is ac-coupled to the external VCO.
IN
AV
REF
DD
IN
Analog Power Supply. This may range from 2.7 V to 3.3 V. Decoupling capacitors to the analog ground plane
should be placed as close as possible to this pin. AV
must be the same value as DVDD.
DD
Reference Input. This is a CMOS input with a nominal threshold of VDD/2 and a dc equivalent input resistance of
100 kΩ. See Figure 2. This input can be driven from a TTL or CMOS crystal oscillator, or it can be ac-coupled.
DGNDDigital Ground.
CEChip Enable. A logic low on this pin powers down the device and puts the charge pump output into three-state
mode. Taking the pin high powers up the device, depending on the status of the power-down bit F2.
CLKSerial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched into the
24-bit shift register on the CLK rising edge. This input is a high impedance CMOS input.
DATASerial Data Input. The serial data is loaded MSB first with the 2 LSB being the control bits. This input is a
high impedance CMOS input.
LELoad Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one of the four
latches, the latch being selected using the control bits.
MUXOUTThis multiplexer output allows either the lock detect, the scaled RF, or the scaled reference frequency to be
accessed externally.
DV
V
P
DD
Digital Power Supply. This may range from 2.7 V to 3.3 V. Decoupling capacitors to the digital ground plane
should be placed as close as possible to this pin. DV
must be the same value as AVDD.
DD
Charge Pump Power Supply. This should be greater than or equal to VDD. In systems where VDD is 3 V, it can be
set to 5 V and used to drive a VCO with a tuning range of up to 5 V.