Analog Devices ADEL2020AR-20-REEL, ADEL2020AR-20, ADEL2020AN Datasheet

Improved Second Source

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ADEL2020

TOP VIEW

V+
OUTPUT

BAL

BAL

–IN
+IN

V–

DISABLE

V+

OUTPUT

BAL

BAL

–IN

+IN

V–

DISABLE

NCNC

NCNC

NCNC

NCNC

NCNC
NCNC

NC = NO CONNECT

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ADEL2020

TOP VIEW

a

FEATURES
Ideal for Video Applications

0.02% Differential Gain

0.048 Differential Phase

0.1 dB Bandwidth to 25 MHz (G = +2)

High Speed

90 MHz Bandwidth (–3 dB)
500 V/ms Slew Rate
60 ns Settling Time to 0.1% (V

Low Noise

2.9 nV/√

Hz Input Voltage Noise

Low Power

6.8 mA Supply Current

2.1 mA Supply Current (Power-Down Mode)

High Performance Disable Function

Turn-Off Time of 100 ns
Input to Output Isolation of 54 dB (Off State)

PRODUCT DESCRIPTION

The ADEL2020 is an improved second source to the EL2020.
This op amp improves on all the key dynamic specifications
while offering lower power and lower cost. The ADEL2020 of­fers 50% more bandwidth and gain flatness of 0.1 dB to beyond
25 MHz. In addition, differential gain and phase are less than

0.05% and 0.05° while driving one back terminated cable (150 Ω).
The ADEL2020 offers other significant improvements. The

most important of these is lower power supply current, 33% less

= 10 V Step)

O

to the EL2020

ADEL2020

CONNECTION DIAGRAMS

8-Pin Plastic Mini-DIP (N) 20-Pin Small Outline Package

than the competition while offering higher output drive. Impor­tant specs like voltage noise and offset voltage are less than half
of those for the EL2020.

The ADEL2020 also features an improved disable feature. The
disable time (to high output impedance) is 100 ns with guaran­teed break before make. Finally the ADEL2020 is offered in the
industrial temperature range of –40°C to +85°C in both plastic
DIP and SOIC package.

+0.1

0

–0.1

+0.1

0

NORMALIZED GAIN – dB

–0.1

100k

1M 100M10M

Ω

RL = 150

RL= 1k

FREQUENCY – Hz

±15V

±5V

±15V

±5V

Fine-Scale Gain (Normalized) vs. Frequency for Various
Supply Voltages. R

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

= 750 Ω, Gain = +2

F

0.10

0.09

0.08

0.07

0.06

0.05

0.04

DIFFERENTIAL GAIN – %

0.03

0.02

0.01

0

GAIN

6

5

SUPPLY VOLTAGE – ± Volts

GAIN = +2

Ω

= 750

R

F

Ω

= 150

R

L

= 3.58MHz

f

C

100 IRE
MODULATED RAMP

PHASE

Differential Gain and Phase vs. Supply Voltage

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] Fax: [phone]

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

DIFFERENTIAL PHASE – Degrees

0.02
0

15

1413121110987

ADEL2020–SPECIFICATIONS

(@ TA = +258C and VS = 615 V dc, RL = 150 Ω unless otherwise noted)

ADEL2020A

Parameter Conditions Temperature Min Typ Max Units

INPUT OFFSET VOLTAGE 1.5 7.5 mV

T

MIN–TMAX

2.0 10.0 mV

Offset Voltage Drift 7 µV/°C

COMMON-MODE REJECTION V

V

OS

±Input Current T

POWER SUPPLY REJECTION V

V

OS

±Input Current T

INPUT BIAS CURRENT –Input T

= ±10 V

CM

= ±4.5 V to ±18 V

S

+Input T

T

MIN–TMAX
MIN–TMAX

T

MIN–TMAX
MIN–TMAX

MIN–TMAX
MIN–TMAX

50 64 dB

0.1 1.0 µA/V

65 72 dB

0.05 0.5 µA/V

0.5 7.5 µA
115µA

INPUT CHARACTERISTICS

+Input Resistance 1 10 MΩ
–Input Resistance 40 Ω
+Input Capacitance 2pF

OPEN-LOOP TRANSRESISTANCE V

OPEN-LOOP DC VOLTAGE GAIN R

OUTPUT VOLTAGE SWING R

= ±10 V

O

R

= 400 Ω T

L

= 400 Ω, V

L

R

= 100 Ω, V

L

= 400 Ω T

L

= ±10 V T

OUT

= ±2.5 V T

OUT

MIN–TMAX

MIN–TMAX
MIN–TMAX

MIN–TMAX

1 3.5 MΩ

80 100 dB
76 88 dB

±12.0 ±13.0 V

Short-Circuit Current 150 mA
Output Current T

MIN–TMAX

30 60 mA

POWER SUPPLY

Operating Range ±3.0 ±18 V
Quiescent Current T
Power-Down Current T
Disable Pin Current Disable Pin = 0 V T
Min Disable Pin Current to Disable T

MIN–TMAX
MIN–TMAX
MIN–TMAX
MIN–TMAX

6.8 10.0 mA

2.1 3.0 mA
290 400 µA
30 µA

DYNAMIC PERFORMANCE

3 dB Bandwidth G = +1; R

G = +2; R
G = +10; R

0.1 dB Bandwidth G = +2; R
Full Power Bandwidth V

Slew Rate R

= 20 V p-p,

O

R

= 400 Ω 8 MHz

L

= 400 Ω, G = +1 500 V/µs

L

= 820 90 MHz

FB

= 750 70 MHz

FB

= 680 30 MHz

FB

= 750 25 MHz

FB

Settling Time to 0.1% 10 V Step, G = –1 60 ns
Differential Gain f = 3.58 MHz 0.02 %
Differential Phase f = 3.58 MHz 0.04 Degree

INPUT VOLTAGE NOISE f = 1 kHz 2.9 nV/√Hz

INPUT CURRENT NOISE –I

, f = 1 kHz 13 pA/√Hz

IN

+I

, f = 1 kHz 1.5 pA√Hz

IN

OUTPUT RESISTANCE Open Loop (5 MHz) 15 Ω

Specifications subject to change without notice.

–2–

REV. A

ADEL2020

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Internal Power Dissipation

2

. . . . . . . Observe Derating Curves

1

Output Short Circuit Duration . . . . Observe Derating Curves

Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . ±6 V

Storage Temperature Range

Plastic DIP and SOIC . . . . . . . . . . . . . . . –65°C to +125°C

Operating Temperature Range . . . . . . . . . . –40°C to +85°C

Lead Temperature Range (Soldering 60 sec) . . . . . . +300°C

NOTES

1

Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

2

8-Pin Plastic Package: θJA = 90°C/Watt
20-Pin SOIC Package: θJA = 150°C/Watt

ESD SUSCEPTIBILITY

ESD (electrostatic discharge) sensitive device. Electrostatic
charges as high as 4000 volts, which readily accumulate on the
human body and on test equipment, can discharge without
detection. Although the ADEL2020 features ESD protection
circuitry, permanent damage may still occur on these devices if
they are subjected to high energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid
any performance degradation or loss of functionality.

+V

S

0.1µF

10kΩ

7

1

5

ADEL2020

323

4

6

0.1µF

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
ADEL2020 is limited by the associated rise in junction tem­perature. For the plastic packages, the maximum safe junction
temperature is 145°C. If the maximum is exceeded momen­tarily, proper circuit operation will be restored as soon as the
die temperature is reduced. Leaving the device in the “over­heated” condition for an extended period can result in device
burnout. To ensure proper operation, it is important to observe
the derating curves below.

While the ADEL2020 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature is not exceeded under all conditions.

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

TOTAL POWER DISSIPATION – Watts

0.6

0.4
–40

8-PIN
MINI-DIP

0

–20

AMBIENT TEMPERATURE – °C

20-PIN SOIC

100

80604020

Maximum Power Dissipation vs. Temperature

REV. A

–V

S

Offset Null Configuration

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

ADEL2020AN –40°C to +85°C 8-Pin Plastic DIP N-8
ADEL2020AR-20 –40°C to +85°C 20-Pin Plastic SOIC R-20
ADEL2020AR-20-REEL –40°C to +85°C 20-Pin Plastic SOIC R-20

–3–

ADEL2020

0

–5

–1
–2
–3

–4

1

CLOSED-LOOP GAIN – dB

0
–45
–90

–135

–180

–225

–270

PHASE SHIFT – Degrees

GAIN = +1
R

L

= 1k

PHASE

GAIN

VS = ±15V

±5V

VS = ±15V

±5V

FREQUENCY – MHz

10 1001 1000

Ω

+V

1kΩ

7

S

0.1µF

V

IN

323

R

T

Figure 1. Connection Diagram for A

PHASE

1
0

–1

–2
–3
–4

CLOSED-LOOP GAIN – dB

–5

GAIN

VS = ±15V

1

±5V

10 100

FREQUENCY – MHz

GAIN = +1
R

= 150

L

VS = ±15V

±5V

0

Ω

–45

–90

–135
–180

–225

–270

1000

Figure 2. Closed-Loop Gain and Phase vs. Frequency,
G = + 1, R

= 150 Ω, RF = 1 kΩ for ±15 V, 910 Ω for ±5 V

L

ADEL2020

4

–V

S

PHASE SHIFT – Degrees

6

0.1µF

Figure 3. Closed-Loop Gain and Phase vs. Frequency,
G = +1, R

V

O

R

L

= +1

VCL

= 1 kΩ, RF = 1 kΩ for ±15 V, 910 Ω for ±5 V

L

110

G = +1

100

90

80

70

60

50

40

–3dB BANDWIDTH – MHz

30

20

= 150

R

L

V

= 250mV p-p

O

2

Ω

RF = 750

Ω

RF = 1k

RF = 1.5k

SUPPLY VOLTAGE – ±Volts

Ω

Ω

PEAKING 1dB

PEAKING 0.1dB

≤

≤

1816141210864

Figure 4. –3 dB Bandwidth vs. Supply Voltage,
Gain = +1, R

= 150

L

Ω

–4–

REV. A