Distortion −110 dBc @100 KHz for V
Low noise: 10.2 nV/√Hz, output-referred, G = 2
Extremely low power: 2.2 mA (3 V supply)
High input impedance: 24 MΩ
User-adjustable gain
High speed: 31 MHz, −3 dB bandwidth (G = +2)
Fast settling time: 300 ns to 0.005% for a 2 V step
Low offset: 0.8 mV max, output-referred, G = 2
Rail-to-rail output
Disable feature
Wide supply voltage range: 2.7 V to 12 V
Available in space-saving, 3 mm × 3 mm LFCSP
APPLICATIONS
Single-supply data acquisition systems
Instrumentation
Process control
Battery-power systems
Medical instrumentation
, dm = 2 V p-p
O
Single-Supply, Differential
FUNCTIONAL BLOCK DIAGRAM
Figure 1.SOIC/LSCSP Pinout
GENERAL DESCRIPTION
The ADA4941-1 is a low power, low noise differential driver for
ADCs up to 18 bits in systems that are sensitive to power. The
ADA4941-1 is configured in an easy-to-use, single-ended-todifferential configuration and requires no external components
for a gain of 2 configuration. A resistive feedback network can
be added to achieve gains greater than 2. The ADA4941-1
provides essential benefits, such as low distortion and high
SNR, that are required for driving high resolution ADCs.
With a wide input voltage range (0 V to 3.9 V on a single 5 V
supply), rail-to-rail output, high input impedance, and a useradjustable gain, the ADA4941-1 is designed to drive singlesupply ADCs with differential inputs found in a variety of low
power applications, including battery-operated devices and
single-supply data acquisition systems.
Information furnished by Analog Devices is be lieved to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
The ADA4941-1 is ideal for driving the 16-bit and 18-bit
PulSAR® ADCs such as the AD7687, AD7690, and AD7691.
The ADA4941-1 is manufactured on ADI’s proprietary secondgeneration XFCB process, which enables the amplifier to
achieve 18-bit performance on low supply currents.
The ADA4941-1 is available in a small 8-lead LFCSP as well as a
standard 8-lead SOIC and is rated to work over the extended
industrial temperature range, −40°C to +125°C.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Figure 2. Distortion vs. Frequency at Various Output Amplitudes
www.analog.com
ADA4941-1
TABLE OF CONTENTS
Features .............................................................................................. 1
Output Voltage Noise ................................................................. 17
TA = 25°C, VS = 3 V, OUT+ connected to FB (G = 2), R
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth VO = 0.1 V p-p 21 30 MHz
VO = 2.0 V p-p 4.6 6.5 MHz
Overdrive Recovery Time +Recover/−Recovery 320/650 ns
Slew Rate VO = 2 V step 22 V/µs
Settling Time 0.005% VO = 2 V p-p step 300 ns
NOISE/DISTORTION PERFORMANCE
Harmonic Distortion fC = 40 kHz, VO = 2 V p-p, HD2/HD3 −116/−112 dBc
fC = 1 MHz, VO = 2 V p-p, HD2/HD3 −75/−71 dBc
RTO Voltage Noise f = 100 kHz 10.2 nV/√Hz
Input Current Noise f = 100 kHz 1.6 pA/√Hz
DC PERFORMANCE
Differential Output Offset Voltage 0.2 0.8 mV
Differential Input Offset Voltage Drift 1.0 µV/°C
Single-Ended Input Offset Voltage Amp A1 or Amp A2 0.1 0.4 mV
Single-Ended Input Offset Voltage Drift 0.3 µV/°C
Input Bias Current IN and REF 3 4.5 µA
Input Offset Current IN and REF 0.1 µA
Gain (+OUT − −OUT)/(IN − REF) 1.98 2.00 2.01 V/V
Gain Error −1 +1 %
Gain Error Drift 1 5 ppm/°C
INPUT CHARACTERISTICS
Input Resistance IN and REF 24 MΩ
Input Capacitance IN and REF 1.4 pF
Input Common-Mode Voltage Range 0.2 1.9 V
Common-Mode Rejection Ratio (CMRR) CMRR = V
OUTPUT CHARACTERISTICS
Output Voltage Swing Each single-ended output, G = 4 ±2.90 ±2.95 V
Output Current 25 mA
Capacitive Load Drive 20% overshoot, VO, dm = 200 mV p-p 20 pF
POWER SUPPLY
Operating Range 2.7 12 V
Quiescent Current 2.2 2.4 mA
Quiescent Current—Disable 10 16 µA
Power Supply Rejection Ratio (PSRR)
+PSRR PSRR = V
−PSRR 86 110 dB
DISABLE
DIS Input Voltage Disabled, DIS = High ≥1.5 V
= 1 kΩ, REF = 1.5 V, unless otherwise noted.
L, dm
OS, dm/VCM
OS, dm
, VREF = VIN, VCM = 0.2 V to 1.9 V, G = 4 81 105 dB
/ΔVS, G = 4 86 100 dB
DIS Input Current Disabled, DIS = High 5.5 8 µA
Enabled, DIS = Low 4 6 µA
Turn-On Time 0.7 µs
Turn-Off Time 30 µs
Rev. C | Page 3 of 24
ADA4941-1
Parameter
Conditions
Min
Typ
Max
Unit
RTO Voltage Noise
f = 100 kHz
10.2 nV/√Hz
Enabled, DIS = Low
4 6
µA
TA = 25°C, VS = 5 V, OUT+ connected to FB (G = 2), R
Table 2.
DYNAMIC PERFORMANCE
−3 dB Bandwidth VO = 0.1 V p-p 22 31 MHz
VO = 2.0 V p-p 4.9 7 MHz
Overdrive Recovery Time +Recover/−Recovery 200/600 ns
Slew Rate VO = 2 V step 24.5 V/µs
Settling Time 0.005% VO = 6 V p-p step 610 ns
NOISE/DISTORTION PERFORMANCE
Harmonic Distortion fC = 40 kHz, VO = 2 V p-p, HD2/HD3 −118/−119 dBc
fC = 100 kHz, VO = 2 V p-p, HD2/HD3 −110/−112 dBc
fC = 1 MHz, VO = 2 V p-p, HD2/HD3 −83/−73 dBc
Input Current Noise f = 100 kHz 1.6 pA/√Hz
DC PERFORMANCE
Differential Output Offset Voltage 0.2 0.8 mV
Differential Input Offset Voltage Drift 1.0 µV/°C
Single-Ended Input Offset Voltage Amp A1 or Amp A2 0.1 0.4 mV
Single-Ended Input Offset Voltage Drift 0.3 µV/°C
Input Bias Current IN and REF 3 4.5 µA
Input Offset Current IN and REF 0.1 µA
Gain (+OUT − −OUT)/(IN − REF) 1.98 2 2.01 V/V
Gain Error −1 +1 %
Gain Error Drift 1 5 ppm/°C
INPUT CHARACTERISTICS
Input Resistance IN and REF 24 MΩ
Input Capacitance IN and REF 1.4 pF
Input Common-Mode Voltage Range 0.2 3.9 V
Common-Mode Rejection Ratio (CMRR) C MRR = V
OUTPUT CHARACTERISTICS
Output Voltage Swing Each single-ended output, G = 4 ±4.85 ±4.93 V
, VREF = VIN, VCM = 0.2 V to 3.9 V, G = 4 84 106 dB
/ΔVS, G = 4 87 100 dB
Turn-On Time 0.7 µs
Turn-Off Time 30 µs
Rev. C | Page 4 of 24
ADA4941-1
Parameter
Conditions
Min
Typ
Max
Unit
RTO Voltage Noise
f = 100 kHz
10.2 nV/√Hz
Enabled, DIS = Low
≤ −4
V
TA = 25°C, VS = ±5 V, OUT+ connected to FB (G = 2), R
Table 3.
DYNAMIC PERFORMANCE
−3 dB Bandwidth VO = 0.1 V p-p 23 32 MHz
VO = 2.0 V p-p 5.2 7.5 MHz
Overdrive Recovery Time +Recover/−Recovery 200/650 ns
Slew Rate VO = 2 V step 26 V/µs
Settling Time 0.005% VO = 12 V p-p step 980 ns
NOISE/DISTORTION PERFORMANCE
Harmonic Distortion fC = 40 kHz, VO = 2 V p-p, HD2/HD3 −118/−119 dBc
fC = 100 kHz, VO = 2 V p-p, HD2/HD3 −109/−112 dBc
fC = 1 MHz, VO = 2 V p-p, HD2/HD3 −84/−75 dBc
Input Current Noise f = 100 kHz 1.6 pA/√Hz
DC PERFORMANCE
Differential Output Offset Voltage 0.2 0.8 mV
Differential Input Offset Voltage Drift 1.0 µV/°C
Single-Ended Input Offset Voltage Amp A1 or Amp A2 0.1 0.4 mV
Single-Ended Input Offset Voltage Drift 0.3 µV/°C
Input Bias Current IN and REF 3 4.5 µA
Input Offset Current IN and REF 0.1 µA
Gain (+OUT − −OUT)/(IN − REF) 1.98 2 2.01 V/V
Gain Error −1 +1 %
Gain Error Drift 1 5 ppm/°C
INPUT CHARACTERISTICS
Input Resistance IN and REF 24 MΩ
Input Capacitance IN and REF 1.4 pF
Input Common-Mode Voltage Range −4.8 +3.9 V
Common-Mode Rejection Ratio (CMRR) CMRR = V
V
CM
OUTPUT CHARACTERISTICS
Output Voltage Swing Each single-ended output, G = 4 VS − 0.25 VS ± 0.14 V
Output Current 25 mA
Capacitive Load Drive 20% overshoot, VO, dm = 200 mV p-p 20 pF
POWER SUPPLY
Operating Range 2.7 12 V
Quiescent Current 2.5 2.7 mA
Quiescent Current—Disable 15 26 µA
Power Supply Rejection Ratio (PSRR)
+PSRR PSRR = V
−PSRR 87 110 dB
DISABLE
DIS Input Voltage Disabled, DIS = High ≥ −3 V
= 1 kΩ, REF = 0 V, unless otherwise noted.
L, dm
OS, dm/VCM
, VREF = VIN,
= −4.8 V to +3.9 V, G = 4
/ΔVS, G = 4 87 100 dB
OS, dm
85 105 dB
DIS Input Current Disabled, DIS = High 7 10 µA
Enabled, DIS = Low 4 6 µA
Turn-On Time 0.7 µs
Turn-Off Time 30 µs
Rev. C | Page 5 of 24
ADA4941-1
2.5
0
–40120
AMBIENT T E M P E RATURE (°C)
MAXIMUM POWER DISSIPATION (W)
2.0
1.5
1.0
0.5
–20020406080100
LFCSP
SOIC
05704-002
human body and test equipment and can discharge without detection. Although this product features
subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 12 V
Power Dissipation See Figure 3
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering 10 sec) 300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for a device soldered in the circuit board with its
exposed paddle soldered to a pad (if applicable) on the PCB
surface that is thermally connected to a copper plane, with zero
airflow.
Table 5. Thermal Resistance
Package Type θJA θJC Unit
8-Lead SOIC on 4-Layer Board 126 28
8-Lead LFCSP with EP on 4-Layer Board 83 19
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4941-1
package is limited by the associated rise in junction temperature
(T
) on the die. At approximately 150°C, which is the glass
J
transition temperature, the plastic changes its properties. Even
temporarily exceeding this temperature limit can change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the ADA4941-1. Exceeding a
junction temperature of 150°C for an extended period can
result in changes in the silicon devices potentially causing
failure.
°C/W
°C/W
The power dissipated in the package (P
) is the sum of the
D
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (V
quiescent current (I
). The power dissipated due to the load
S
) times the
S
drive depends upon the particular application. For each output,
the power due to load drive is calculated by multiplying the load
current by the associated voltage drop across the device. The
power dissipated due to all of the loads is equal to the sum of
the power dissipation due to each individual load. RMS voltages
and currents must be used in these calculations.
. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θ
. The exposed paddle on the underside of the
JA
package must be soldered to a pad on the PCB surface that is
thermally connected to a copper plane to achieve the specified θ
.
JA
Figure 3 shows the maximum safe power dissipation in the
packages vs. the ambient temperature for the 8-lead SOIC
(126°C/W) and for the 8-lead LFCSP (83°C/W) on a JEDEC
standard 4-layer board. The LFCSP must have its underside
paddle soldered to a pad that is thermally connected to a PCB
plane. θ
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
values are approximations.
JA
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the
proprietary ESD protection circuitry, permanent damage may occur on devices
degradation or loss of functionality.
Rev. C | Page 6 of 24
ADA4941-1
DIS
4
3
2
1
IN
OUT–OUT+
NOTES
1. THE EXPOSED PAD IS NOT ELECTRICALLY CONNECTED TO THE DEVICE.
IT IS TYPICALLY SOLDERED TO G ROUND OR A POWER PLANE ON THE PCB
THAT IS THERMALLY CONDUCTIVE.