Analog Devices AD9632, AD9631 Datasheet
Ultralow Distortion, Wide
–30
–130
100k 100M10M1M10k
–70
–50
–110
–90
FREQUENCY – Hz
HARMONIC DISTORTION – dBc
VO = 2V p–p
VS = ±5V
RL = 500Ω
2ND HARMONIC
3RD HARMONIC
1
2
3
4
8
7
6
5
AD9631/32
NC
–INPUT
+INPUT
–V
S
NC
+V
S
OUTPUT
NC
(Top View)
NC = NO CONNECT
a
Bandwidth Voltage Feedback Op Amps
FEATURES
Wide Bandwidth AD9631, G = +1 AD9632, G = +2
Small Signal 320 MHz 250 MHz
Large Signal (4 V p-p) 175 MHz 180 MHz
Ultralow Distortion (SFDR), Low Noise
–113 dBc typ @ 1 MHz
–95 dBc typ @ 5 MHz
–72 dBc typ @ 20 MHz
+46 dBm 3rd Order Intercept @ 25 MHz
7.0 nV/√
Hz Spectral Noise Density
High Speed
Slew Rate 1300 V/µs
Settling 16 ns to 0.01%, 2 V Step
±3 V to ±5 V Supply Operation
17 mA Supply Current
APPLICATIONS
ADC Input Driver
Differential Amplifiers
IF/RF Amplifiers
Pulse Amplifiers
Professional Video
DAC Current to Voltage
Baseband and Video Communications
Pin Diode Receivers
Active Filters/Integrators/Log Amps
AD9631/AD9632
FUNCTIONAL BLOCK DIAGRAM
8-Pin Plastic Mini-DIP (N), Cerdip (Q),
and SO (R) Packages
These characteristics position the AD9631/AD9632 ideally for
driving flash as well as high resolution ADCs. Additionally, the
balanced high impedance inputs of the voltage feedback architecture allow maximum flexibility when designing active filters.
The AD9631 is offered in industrial (–40°C to +85°C) and military (–55°C to +125°C) temperature ranges and the AD9632 in
industrial. Industrial versions are available in plastic DIP and
SOIC; MIL versions are packaged in cerdip.
PRODUCT DESCRIPTION
The AD9631 and AD9632 are very high speed and wide bandwidth amplifiers. They are an improved performance alternative
to the AD9621 and AD9622. The AD9631 is unity gain stable.
The AD9632 is stable at gains of two or greater. Utilizing a
voltage feedback architecture, the AD9631/AD9632’s exceptional settling time, bandwidth, and low distortion meet the
requirements of many applications which previously depended
on current feedback amplifiers. Its classical op amp structure
works much more predictably in many designs.
A proprietary design architecture has produced an amplifier that
combines many of the best characteristics of both current feedback and voltage feedback amplifiers. The AD9631 and
AD9632 exhibit exceptionally fast and accurate pulse response
(16 ns to 0.01%) as well as extremely wide small signal and
large signal bandwidth and ultralow distortion. The AD9631
achieves –72 dBc at 20 MHz and 320 MHz small signal and
175 MHz large signal bandwidths.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Figure 1. AD9631 Harmonic Distortion vs. Frequency,
G = +1
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700 Fax: 617/326-8703
AD9631/AD9632–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(±VS = ±5 V; R
= 100 Ω; AV = 1 (AD9631); AV = 2 (AD9632), unless otherwise noted)
LOAD
AD9631A AD9632A
Parameter Conditions Min Typ Max Min Typ Max Units
DYNAMIC PERFORMANCE
Bandwidth (–3 dB)
Small Signal V
Large Signal
1
Bandwidth for 0.1 dB Flatness V
Slew Rate, Average +/– V
Rise/Fall Time V
≤ 0.4 V p-p 220 320 180 250 MHz
OUT
V
= 4 V p-p 150 175 155 180 MHz
OUT
= 300 mV p-p
OUT
9631, R
OUT
OUT
V
OUT
= 140 Ω; 9632, RF = 425 Ω 130 130 MHz
F
= 4 V Step 1000 1300 1200 1500 V/µs
= 0.5 V Step 1.2 1.4 ns
= 4 V Step 2.5 2.1 ns
Settling Time
To 0.1% V
To 0.01% V
= 2 V Step 11 11 ns
OUT
= 2 V Step 16 16 ns
OUT
HARMONIC/NOISE PERFORMANCE
2nd Harmonic Distortion 2 V p-p; 20 MHz, R
= 500 Ω –72 –65 –72 –65 dBc
R
L
3rd Harmonic Distortion 2 V p-p; 20 MHz, R
= 500 Ω –81 –74 –81 –74 dBc
R
L
= 100 Ω –64 –57 –54 –47 dBc
L
= 100 Ω –76 –69 –74 –67 dBc
L
3rd Order Intercept 25 MHz +46 +41 dBm
Noise Figure R
Input Voltage Noise 1 MHz to 200 MHz 7.0 4.3 nV√
Input Current Noise 1 MHz to 200 MHz 2.5 2.0 pA√
= 50 Ω 18 14 dB
S
Hz
Hz
Average Equivalent Integrated
Input Noise Voltage 0.1 MHz to 200 MHz 100 60 µV rms
Differential Gain Error (3.58 MHz) R
Differential Phase Error (3.58 MHz) R
= 150 Ω 0.03 0.06 0.02 0.04 %
L
= 150 Ω 0.02 0.04 0.02 0.04 Degree
L
Phase Nonlinearity dc to 100 MHz 1.1 1.1 Degree
2,
R
DC PERFORMANCE
Input Offset Voltage
3
= 150 Ω
L
T
MIN–TMAX
310 25 mV
13 8 mV
Offset Voltage Drift ±10 ±10 µV/°C
Input Bias Current 2 7 2 7 µA
T
MIN–TMAX
10 10 µA
Input Offset Current 0.1 3 0.1 3 µA
55µA
Common-Mode Rejection Ratio V
Open-Loop Gain V
T
MIN–TMAX
= ±2.5 V 70 90 70 90 dB
CM
= ±2.5 V 46 52 46 52 dB
OUT
T
MIN–TMAX
40 40 dB
INPUT CHARACTERISTICS
Input Resistance 500 500 kΩ
Input Capacitance 1.2 1.2 pF
Input Common-Mode Voltage Range ±3.4 ±3.4 V
OUTPUT CHARACTERISTICS
Output Voltage Range, R
= 150 Ω±3.2 ±3.9 ±3.2 ±3.9 V
L
Output Current 70 70 mA
Output Resistance 0.3 0.3 Ω
Short Circuit Current 240 240 mA
POWER SUPPLY
Operating Range ±3.0 ±5.0 ±6.0 ±3.0 ±5.0 ±6.0 V
Quiescent Current 17 18 16 17 mA
T
Power Supply Rejection Ratio T
NOTES
1
See Max Ratings and Theory of Operation sections of data sheet.
2
Measured at AV = 50.
3
Measured with respect to the inverting input.
Specifications subject to change without notice.
MIN–TMAX
MIN–TMAX
50 60 56 66 dB
21 20 mA
–2–
REV. A
AD9631/AD9632
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing × Bandwidth Product . . . . . . . . . .550 V × MHz
Internal Power Dissipation
2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . . – 40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Pin Plastic Package: θ
8-Pin SOIC Package: θJA = 140°C/Watt
= 90°C/Watt
JA
METALIZATION PHOTO
Dimensions shown in inches and (mm).
Connect Substrate to –V
–IN
2
.
S
+V
S
7
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these devices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can
result in device failure.
While the AD9631 and AD9632 are internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
8-PIN MINI-DIP PACKAGE
1.5
1.0
0.5
8-PIN SOIC PACKAGE
TJ = +150°C
0.046
(1.17)
0.046
(1.17)
MAXIMUM POWER DISSIPATION – Watts
OUT
0
–50 80
–40
6
0 10 –10 –20 –30 20 30 40 50 60 70
AMBIENT TEMPERATURE –
°
C
Figure 2. Plot of Maximum Power Dissipation vs.
90
Temperature
ORDERING GUIDE
0.050 (1.27)
AD9631
Temperature Package Package
+V
S
7
Model Range Description Option*
3
4
+IN
–V
S
–IN
2
AD9631AN –40C to +85°C Plastic DIP N-8
AD9631AR –40°C to +85°C SOIC R-8
AD9631(SMD) –55°C to +125°C Cerdip Q-8
AD9631-EB Evaluation
Board
OUT
6
AD9632AN –40°C to +85°C Plastic DIP N-8
AD9632AR –40°C to +85°C SOIC R-8
AD9632-EB Evaluation
Board
3
4
+IN
–V
S
AD9632
0.050 (1.27)
*N = Plastic DIP; Q = Cerdip; R= SOIC (Small Outline Integrated Circuit).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. A
–3–
WARNING!
ESD SENSITIVE DEVICE
AD9631–Typical Characteristics
AD9631/AD9632
R
F
10µF
S
0.1µF
7
6
0.1µF
4
10µF
S
RL = 100Ω
PUL SE
GENERATOR
TR/TF = 350ps
V
IN
R
49.9Ω
+V
2
130Ω
T
AD9631
3
–V
Figure 3. Noninverting Configuration, G = +1
R
F
10µF
S
0.1µF
6
0.1µF
10µF
S
V
OUT
RL = 100Ω
2
3
+V
7
AD9631
4
–V
PULSE
GENERATOR
TR/TF = 350ps
V
V
OUT
130Ω
IN
R
T
49.9Ω
100Ω
Figure 6. Inverting Configuration, G = –1
Figure 4. Large Signal Transient Response; VO = 4 V p-p,
G = +1, RF = 250
Ω
Figure 5. Small Signal Transient Response;
VO = 400 mV p-p, G = +1, RF = 140
Ω
Figure 7. Large Signal Transient Response; VO = 4 V p-p,
G = –1, RF = RIN = 267
Ω
Figure 8. Small Signal Transient Response;
VO = 400 mV p-p, G = –1, RF = R
= 267
IN
Ω
REV. A
–4–
AD9632–Typical Characteristics
AD9631/AD9632
R
F
PULSE
GENERATOR
TR/TF = 350ps
R
V
IN
R
T
49.9Ω
IN
130Ω
2
3
+V
7
AD9632
–V
10µF
S
0.1µF
6
0.1µF
4
10µF
S
RL = 100Ω
Figure 9. Noninverting Configuration, G = +2
R
F
10µF
S
0.1µF
6
0.1µF
10µF
S
V
OUT
RL = 100Ω
2
3
+V
7
AD9632
4
–V
PUL SE
GENERATOR
TR/TF = 350ps
R
T
49.9Ω
130Ω
100Ω
V
V
OUT
IN
Figure 12. Inverting Configuration, G= –1
Figure 10. Large Signal Transient Response; VO = 4 V p-p,
G = +2, RF = RIN = 422
Ω
Figure 11. Small Signal Transient Response;
VO = 400 mV p-p, G = +2, RF = RIN = 274
Ω
Figure 13. Large Signal Transient Response; VO = 4 V p-p,
G = –1, RF = RIN = 422 Ω, RT = 56.2
Ω
Figure 14. Small Signal Transient Response;
VO = 400 mV p-p, G = –1, RF = R
R
= 61.9
T
Ω
= 267 Ω,
IN
REV. A
–5–
AD9631–Typical Characteristics
VALUE OF FEEDBACK RESISTOR (RF) – Ω
–3dB BANDWIDTH – MHz
450
250
20 240
400
300
40
350
200 2201801601401201008060
N PACKAGE
R PACKAGE
R
F
130Ω
AD9631
VS = ±5V
R
L
= 100Ω
GAIN = +1
R
L
1
–4
–9
1M 10M 1G100M
–5
–6
–7
–8
–3
–2
–1
0
FREQUENCY – Hz
GAIN – dB
R
F
267Ω
VS = ±5V
R
L
= 100Ω
V
O
= 300mV p-p
AD9631/AD9632
1
0
–1
VS = ±5V
–2
R
= 100Ω
L
V
= 300mV p-p
O
–3
–4
–5
GAIN – dB
–6
–7
–8
–9
1M 10M 1G100M
R
50Ω
FREQUENCY – Hz
F
R
F
150Ω
R
F
100Ω
R
F
200Ω
Figure 15. AD9631 Small Signal Frequency Response
G = +1
0.1
0
–0.1
V
= ±5V
S
–0.2
–0.3
–0.4
–0.5
GAIN – dB
–0.6
–0.7
–0.8
–0.9
= 100Ω
R
L
G = +1
Vo = 300mV p-p
1M 10M 500M100M
R
F
100Ω
FREQUENCY – Hz
R
F
120Ω
R
F
150Ω
R
F
140Ω
Figure 18. AD9631 Small Signal –3 dB Bandwidth vs. R
1
0
–1
VS = ±5V
–2
–3
–4
–5
OUTPUT – dB
–6
–7
–8
–9
= 4V
V
p-p
O
= 100Ω
R
L
1M 10M 500M100M
RF = 50Ω
TO
250Ω BY 50Ω
FREQUENCY – Hz
R
F
250Ω
F
Figure 16. AD9631 0.1 dB Flatness, N Package (for R
Package Add 20
90
80
70
60
50
40
30
GAIN – dB
20
10
0
–10
–20
10k 100k 10M1M
Figure 17. AD9631 Open-Loop Gain and Phase Margin vs.
Frequency, RL = 100
REV. A
Ω
to RF)
GAIN
FREQUENCY – Hz
Ω
PHASE
100M 1G
100
80
60
40
20
0
–20
–40
–60
PHASE MARGIN – Degrees
–80
–100
–120
–6–
Figure 19. AD9631 Large Signal Frequency Response,
G = +1
Figure 20. AD9631 Small Signal Frequency Response,
G = –1
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